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Fengfan Ren

Publications and source records attributed to Fengfan Ren.

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Stack of correlated insulating states in bilayer graphene kagome superlattice

Graphene-based systems have emerged as a rich platform for exploring emergent quantum phenomena-including superconductivity, magnetism, and correlated insulating behavior-arising from flat electronic bands that enhance many-body interactions. Realizing such flat bands has thus far relied primarily on moir\'e graphene superlattices or rhombohedral stacking graphene systems, both of which face challenges in reproducibility and tunability. Here, we introduce an artificial Kagome superlattice in bilayer graphene, engineered via nanopatterning of the dielectric substrate to create a precisely defined and electrostatically tunable periodic potential. Magnetotransport measurements reveal the emergence of a stack of correlated insulating states at moderate superlattice potentials, characteristic of strong electron-electron interactions within Kagome-induced flat bands. As temperature increases, these correlated gaps collapse, signaling the thermal suppression of interaction-driven states. Continuum-model calculations confirm the formation of multiple flat minibands and reproduce the observed evolution of band reconstruction. Our results establish dielectric-patterned graphene superlattices as a robust and controllable architecture for realizing flat-band-induced correlated phenomena beyond moir\'e systems.

cond-mat.mes-hall

Fractional topological states in rhombohedral multilayer graphene modulated by kagome superlattice

Fractional quantum anomalous Hall effects realized in twisted bilayer MoTe$_2$ and multilayer-graphene-based moir\'e heterostructures have captured a tremendous growth of interest. In this work, we propose that rhombohedral multilayer graphene coupled with an artificial kagome superlattice potential is a new platform to realize various fractional topological phases. Taking Bernal bilayer graphene as the simplest example, when it is placed on top of a prepatterned SiO$_2$ substrate with periodic arrays of holes arranged into kagome lattice, the system would be subject to a tunable kagome superlattice potential once an electrostatic voltage drop between the top and bottom gates is applied. Then, we theoretically study the electronic band structures, topological properties, and quantum geometric properties of the Bloch states of Bernal bilayer graphene coupled with a realistic kagome superlattice potential, which is well benchmarked by transport measurements in the weak superlattice-potential regime. We find that the system may exhibit nearly ideal topological flat bands in a substantial region of the parameter space spanned by superlattice constant and electrostatic potential strength. When these topological flat bands are fractionally filled, exact diagonalization calculations suggest that the system would exhibit rich fractional topological phases at 1/3, 2/3, 2/5, 3/5 and 1/2 fillings including both fractional Chern insulators and anomalous composite Fermi liquids under zero magnetic field.

cond-mat.mes-hall