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Fengguang Liu

Publications and source records attributed to Fengguang Liu.

3 recordsLinked to original sources

Tuning Carrier Type and Density in Highly Conductive and Infrared-Transparent (Bi1-xSbx)2Te3 films

Infrared transparent conductors have long been sought due to their broad optoelectronic applications in the infrared wavelength range. However, the search for ideal materials has been limited by the inherent trade-off between electrical conductance and optical transmittance. Band engineering offers an effective approach to modulate carrier type and density, enabling concurrent tuning of both conductance and transmittance. In this work, we present a band engineering strategy that enables effective tuning of both infrared transmittance and electrical conductance in topological insulator (Bi1-xSbx)2Te3, bridging the gap and paving the way for applying topological insulators to infrared photoelectric devices. More importantly, with the combination of high carrier mobility and a large optical dielectric constant as suggested by previous report, Sb2Te3 achieves a high electrical conductance (~1000 S/cm) and outstanding infrared transmittance (92.3%) in the wavelength range of 8~13 um, demonstrating strong potential as an infrared transparent conductor. Our findings reveal that concurrent enhancement of both carrier mobility and optical dielectric constant is key to overcoming the conductance-transmittance trade-off. This work provides valuable insight for the exploration of high-performance infrared transparent conducting materials.

cond-mat.mtrl-sci

Optical evidence of the chiral magnetic anomaly in Weyl semimetal TaAs

Chiral pumping from optical electric fields oscillating at THz frequencies is observed in the Weyl material TaAs with electric and magnetic fields aligned along both the a- and c-axes. Free carrier spectral weight enhancement is measured directly for the first time, confirming theoretical expectations of chiral pumping. A departure from linear field-dependence of the Drude weight is observed at the highest fields in the quantum limit, providing direct evidence of field-dependent Fermi velocity of the chiral Landau level. Implications for the chiral magnetic effect in Weyl semimetals from the optical f-sum rule are discussed.

cond-mat.mes-hall

3D Dirac cone carrier dynamics in Na3Bi and Cd3As2

Optical measurements and band structure calculations are reported on 3D Dirac materials. The electronic properties associated with the Dirac cone are identified in the reflectivity spectra of Cd$_3$As$_2$ and Na$_3$Bi single crystals. In Na$_3$Bi, the plasma edge is found to be strongly temperature dependent due to thermally excited free carriers in the Dirac cone. The thermal behavior provides an estimate of the Fermi level $E_F=25$ meV and the z-axis Fermi velocity $v_z = 0.3 \text{ eV} Å$ associated with the heavy bismuth Dirac band. At high energies above the $Γ$-point Lifshitz gap energy, a frequency and temperature independent $ε_2$ indicative of Dirac cone interband transitions translates into an ab-plane Fermi velocity of $3 \text{ eV} Å$. The observed number of IR phonons rules out the $\text{P}6_3\text{/mmc}$ space group symmetry but is consistent with the $\text{P}\bar{3}\text{c}1$ candidate symmetry. A plasmaron excitation is discovered near the plasmon energy that persists over a broad range of temperature. The optical signature of the large joint density of states arising from saddle points at $Γ$ is strongly suppressed in Na$_3$Bi consistent with band structure calculations that show the dipole transition matrix elements to be weak due to the very small s-orbital character of the Dirac bands. In Cd$_3$As$_2$, a distinctive peak in reflectivity due to the logarithmic divergence in $ε_1$ expected at the onset of Dirac cone interband transitions is identified. The center frequency of the peak shifts with temperature quantitatively consistent with a linear dispersion and a carrier density of $n=1.3\times10^{17}\text{ cm}^{-3}$. The peak width gives a measure of the Fermi velocity anisotropy of $10\%$, indicating a nearly spherical Fermi surface. The lineshape gives an upper bound estimate of 7 meV for the potential fluctuation energy scale.

cond-mat.str-el