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Fengmiao Li

Publications and source records attributed to Fengmiao Li.

11 recordsLinked to original sources

Direct Fabrication of a Superconducting Two-Dimensional Electron Gas on KTaO3(111) via Mg-Induced Surface Reduction

Two-dimensional electron gases (2DEGs) at the surfaces of KTaO3 have become an exciting platform for exploring strong spin-orbit coupling, Rashba physics, and low-carrier-density superconductivity. Yet, a large fraction of reported KTaO3-based 2DEGs has been realized through chemically complex overlayers that both generate carriers and can obscure the native electronic structure, making spectroscopic access to the underlying 2DEG challenging. Here, we demonstrate a simple and direct method to generate a superconducting 2DEG on KTaO3(111) using Mg-induced surface reduction in molecular-beam epitaxy (MBE). Mg has an extremely low sticking coefficient at elevated temperatures, enabling the formation of an ultrathin (less than 1-2 monolayers) MgO layer that is transparent to soft x-ray photoemission spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES). This allows direct measurement of the surface chemistry and low-energy electronic structure of the pristine reduced surface without the need for a several-nanometer-thick capping layer. XPS shows clear reduction of Ta5+ to lower oxidation states, while ARPES reveals a parabolic Ta 5d conduction band with an approximately 150 meV bandwidth and additional subband features arising from quantum confinement. Transport measurements confirm a superconducting transition below 0.7 K. Together, these results demonstrate a chemically straightforward and controllable pathway for fabricating spectroscopically accessible superconducting 2DEGs on KTaO3(111), and provide a powerful new platform for investigating the mechanisms underlying orientation-dependent superconductivity in KTaO3-based oxide interfaces.

cond-mat.supr-con

Gate-imprinted memory and light-induced erasure of superconductivity at KTaO$_3$-based interfaces

Realizing non-volatile control of superconductivity is a key step toward integrating memory and quantum functionality in future information technologies. KTaO$_3$-based heterostructures uniquely host interfacial two-dimensional superconductivity and quantum paraelectric lattice background. The coupling between these two degrees of freedom potentially provides a promising route to encode memory into the superconducting state. Here we reveal two intertwined phenomena in AlO$_x$/KTaO$_3$ heterostructures: a gate-imprinted memory in which electrostatic gate cycling promotes superconductivity, and its erasure by optical illumination at cryogenic temperatures. These phenomena arise from a previously unrecognized interplay between the superconducting interface and emergent lattice excitations including polar-nanoregion reorientation and charge trapping/detrapping by oxygen vacancies. These results demonstrate configurable superconductivity at correlated oxide interfaces, opening a pathway to enrich dissipationless transport with non-volatile controls for superconducting elements.

cond-mat.supr-con

Layer controlled orbital selective Mott transition in monolayer nickelate

Dimensionality and electronic correlations are crucial elements of many quantum material properties. An example is the change of the electronic structure accompanied by the loss of quasiparticles when a metal is reduced from three dimensions to a lower dimension, where the Coulomb interaction between carriers becomes poorly screened. Here, using angle-resolved photoemission spectroscopy (ARPES), we report an orbital-selective decoherence of spectral density in the perovskite nickelate LaNiO3 towards the monolayer limit. The spectral weight of the dz2 band vanishes much faster than that of the dx2-y2 band as the thickness of the LaNiO3 layer is decreased to a single unit cell, indicating a stronger correlation effect for the former upon dimensional confinement. Dynamical mean-field theory (DMFT) calculations show an orbital-selective Mott transition largely due to the localization of dz2 electrons along the c axis in the monolayer limit. This orbital-selective correlation effect underpins many macroscopic properties of nickelates, such as metal-to-insulator transition and superconductivity, where most theories are built upon a dx2-y2-dz2 two-band model.

cond-mat.str-el

Magnetic Ni-N-Ni Centers in N-substituted NiO

To explore how anion substitution modifies the existing magnetism in strongly correlated oxides, we investigate local electronic states and magnetic ordering in nickel oxide (NiO) induced by substituting oxygen (O) with nitrogen (N). Each N introduces an additional N 2p hole and modifies the magnetic moment of a neighboring nickel (Ni) cation site, as the exchange interaction between this hole and the Ni eg electrons exceeds the Ni-O-Ni superexchange interaction. This leads to the formation of Ni-N-Ni centers consisting of five spins, without perturbing the antiferromagnetic NiO lattice. These centers are studied using density functional theory and confirmed through high-resolution spectroscopy on N-substituted NiO thin films grown by molecular beam epitaxy. This type of magnetic design may enable future advances in quantum technologies based on strongly correlated materials, such as quantum sensors and spin-based qubits.

cond-mat.str-el

Critical Role of Disorder for Superconductivity in the Series of Epitaxial Ti(O,N) Films

Realizing experimental control of superconductivity is of paramount importance to advancing both basic research and technological applications. Disorder, generally existing in most superconductors, intricately interacts with Cooper pairs and also impacts the performance of quantum devices. In this paper, we report the study of a series of Ti(O,N) crystalline films prepared via molecular beam epitaxy (MBE). We discover that substituting nitrogen (N) for oxygen (O) in TiO, namely TiO(N), considerably increases the normal-state conductivity and the superconducting transition temperature Tc. The Tc of TiO(N) falling between those of TiO (about 0.5 K) and TiN (about 6 K) is contrary to their comparable Tc predicted by the Migdal Eliasberg theory. It is found that their resistivity vs temperature obeys the Mooij rule, known as the characteristic of metallic glasses. Density functional theory (DFT) calculations demonstrate that strong disorder severely scatters the Bloch electron waves at nonzero momenta, which consequently weakens electron-phonon coupling in TiO(N).

cond-mat.supr-con

Modulation doping of the FeSe monolayer on SrTiO$_3$

The discovery of higher-temperature superconductivity in FeSe monolayers on SrTiO$_3$ (STO) substrates has sparked a surge of interest in the interface superconductivity. One point of the agreement reached to date is that modulation doping by impurities in the substrate is critical for the enhanced superconductivity. Remarkably, the universal doping of about 0.1 electrons per Fe, \textit{i.e.}, so-called ``magic'' doping, has been observed on a range of Ti oxide substrates, which concludes that there likely is some important interaction limiting the FeSe doping. Our study discovers that the polarization change at the interface Se because of the close proximity to the substrate from that in the free-standing FeSe film significantly amplifies the total potential difference at the interface above and beyond the work function difference for charge transfer. Additionally, the titanate substrate with a large number of free electrons basically serves as an ``infinite'' charge reservoir, which leads to the saturated FeSe doping with the complete removal of interface potential gradient. Our work has developed the theory for modulation doping in the Van der Waals materials/oxides heterostructure, providing a solution to the puzzle of ``magic'' doping in FeSe monolayers on titanates. The information also presents experimental pathways to accommodate a variable carrier density of FeSe monolayers via modulation doping.

cond-mat.supr-con

Controlling the electrical and magnetic ground states by doping in the complete phase diagram of titanate Eu1-xLaxTiO3 thin films

EuTiO3, a band insulator, and LaTiO3, a Mott insulator, are both antiferromagnetic with transition temperatures ~ 5.5 K and ~ 160 K, respectively. Here, we report the synthesis of Eu1-xLaxTiO3 thin films with x = 0 to 1 by oxide molecular beam epitaxy. The films in the full range have high crystalline quality and show no phase segregation, allowing us carry out transport measurements to study their electrical and magnetic properties. From x = 0.03 to 0.95, Eu1-xLaxTiO3 films show conduction by electrons as charge carriers, with differences in carrier densities and mobilities, contrary to the insulating nature of pure EuTiO3 and LaTiO3. Following a rich phase diagram, the magnetic ground states of the films vary with increasing La-doping level, changing Eu1-xLaxTiO3 from an antiferromagnetic insulator to an antiferromagnetic metal, a ferromagnetic metal, a paramagnetic metal, and back to an antiferromagnetic insulator. These emergent properties reflect the evolutions of the band structure, mainly at the Ti t2g bands near the Fermi level, when Eu2+ are gradually replaced by La3+. This work sheds light on this method for designing the electrical and magnetic properties in strongly-correlated oxides and completes the phase diagram of the titanate Eu1-xLaxTiO3.

cond-mat.str-el

Epitaxial Growth of Perovskite SrBiO$_3$ Film on SrTiO$_3$ by Oxide Molecular Beam Epitaxy

Hole-doped perovskite bismuthates such as Ba$_{1-x}$K$_x$BiO$_3$ and Sr$_{1-x}$K$_x$BiO$_3$ are well-known bismuth-based oxide high-transition-temperature superconductors. Reported thin bismuthate films show relatively low quality, likely due to their large lattice mismatch with the substrate and a low sticking coefficient of Bi at high temperatures. Here, we report the successful epitaxial thin film growth of the parent compound strontium bismuthate SrBiO$_3$ on SrO-terminated SrTiO$_3$ (001) substrates by molecular beam epitaxy. Two different growth methods, high-temperature co-deposition or recrystallization cycles of low-temperature deposition plus high-temperature annealing, are developed to improve the epitaxial growth. SrBiO$_3$ has a pseudocubic lattice constant $\sim$4.25 Å, an $\sim$8.8\% lattice mismatch on SrTiO$_3$ substrate, leading to a large strain in the first few unit cells. Films thicker than 6 unit cells prepared by both methods are fully relaxed to bulk lattice constant and have similar quality. Compared to high-temperature co-deposition, the recrystallization method can produce higher quality 1-6 unit cell films that are coherently or partially strained. Photoemission experiments reveal the bonding and antibonding states close to the Fermi level due to Bi and O hybridization, in good agreement with density functional theory calculations. This work provides general guidance to the synthesis of high-quality perovskite bismuthate films.

cond-mat.supr-con

Electron phonon coupling versus photoelectron energy loss at the origin of replica bands in photoemission of FeSe on SrTiO$_3$

The recent observation of replica bands in single-layer FeSe/SrTiO$_3$ by angle-resolved photoemission spectroscopy (ARPES) has triggered intense discussions concerning the potential influence of the FeSe electrons coupling with substrate phonons on the superconducting transition temperature. Here we provide strong evidence that the replica bands observed in the single-layer FeSe/SrTiO$_3$ system and several other cases are largely due to the energy loss processes of the escaping photoelectron, resulted from the well-known strong coupling of external propagating electrons to Fuchs-Kliewer (F-K) surface phonons in ionic materials in general. The photoelectron energy loss in ARPES on single-layer FeSe/SrTiO$_3$ is calculated using the demonstrated successful semi-classical dielectric theory in describing low energy electron energy loss spectroscopy of ionic insulators. Our result shows that the observed replica bands are mostly a result of extrinsic photoelectron energy loss and not a result of the electron phonon interaction of the Fe d electrons with the substrate phonons. The strong enhancement of the superconducting transition temperature in these monolayers remains an open question.

cond-mat.mtrl-sci

Strain-induced Defect Superstructure on the SrTiO3(110) Surface

We report on a combined scanning tunneling microscopy and density functional theory calculation study of the SrTiO3(110)-(4 x 1) surface. It is found that antiphase domains are formed along the [1-10]-oriented stripes on the surface. The domain boundaries are decorated by defects pairs consisting of Ti2O3 vacancies and Sr adatoms, which relieve the residual stress. The formation energy of, and interactions between, vacancies result in a defect superstructure. It is suggested that the density and distributions of defects can be tuned by strain engineering, providing a fexible platform for the designed growth of complex oxide materials.

cond-mat.str-el

Reversible Transition Between Thermodynamically Stable Phases with Low Density of Oxygen Vacancies on SrTiO$_3$(110) Surface

The surface reconstruction of SrTiO$_3$(110) is studied with scanning tunneling microscopy and density functional theory (DFT) calculations. The reversible phase transition between (4$\times$1) and (5$\times$1) is controlled by adjusting the surface metal concentration [Sr] or [Ti]. Resolving the atomic structures of the surface, DFT calculations verify that the phase stability changes upon the chemical potential of Sr or Ti. Particularly, the density of oxygen vacancies is low on the thermodynamically stabilized SrTiO$_3$(110) surface.

cond-mat.mtrl-sci