arXiv subjects

Fengzhe Wang

Publications and source records attributed to Fengzhe Wang.

2 recordsLinked to original sources

arXiv2026

Bipolar-doped superconducting infinite-layer cuprates

Distilling the intrinsic physics of the superconducting CuO2 plane from the complexities of charge-reservoir layers is a defining challenge in high-temperature superconductivity. While superconducting electron-doped infinite-layer cuprates have been synthesized, controllable and uniform hole doping has long remained elusive despite exploratory attempts, limiting spectroscopic insights. Here, we realize bipolar doping across infinite-layer (Sr,Eu)CuO2 and (Ca,Li)CuO2+δ single-crystalline thin films, mapping the electronic phase diagram. Both electron- and hole-doped films show pronounced electrical resistance anisotropy, indicating the quasi-two-dimensional nature of the CuO2 planes. Angle-resolved photoemission spectroscopy across electron- and hole-doped regimes reveals persistent antiferromagnetic band folding coexisting with superconductivity. Remarkably, at a hole doping ~0.07 determined by Luttinger volume, the antiferromagnetic folding emerges from Fermi arcs within the film's single Fermi surface, with the onset superconducting transition temperature exceeding 60 K. These findings redefine the interplay between magnetic order and superconductivity and establish a definitive platform to investigate the intrinsic mechanism of high-temperature superconducting cuprates.

cond-mat.supr-con↗

arXiv2024

Gigantic-oxidative atomic-layer-by-layer epitaxy for artificially designed complex oxides

In designing material functionalities for transition metal oxides, lattice structure and d-orbital occupancy are key determinants. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, growth kinetics, and stoichiometry precision, particularly for metastable phases. We introduce a methodology, namely the gigantic-oxidative atomic-layer-by-layer epitaxy (GOALL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond conventional pulsed laser deposition (PLD) and oxide molecular beam epitaxy (OMBE), while ensuring atomic-layer-by-layer growth of designed complex structures. Thermodynamic stability is markedly augmented with stronger oxidation at elevated temperatures, whereas growth kinetics is sustained by laser ablation at lower temperatures. We demonstrate the accurate growth of complex nickelates and cuprates, especially an artificially designed structure with alternating single and double NiO2 layers possessing distinct nominal d-orbital occupancy, as a parent of high-temperature superconductor. The GOALL-Epitaxy enables material discovery within the vastly broadened growth parameter space.

cond-mat.str-el↗