arXiv subjects

Ferechteh H. Teherani

Publications and source records attributed to Ferechteh H. Teherani.

2 recordsLinked to original sources

arXiv2026

Roadmap on UV-C photodetectors: materials, applications and industry perspectives

UV-C photodetectors are poised to play an increasingly important role in future photonic technologies, driven by the rapid emergence of UV-C light sources and new wide bandgap semiconductors. These advances are enabling new levels of spectral selectivity, radiation hardness, sensitivity, and device integration, while opening opportunities across a broad range of applications. This roadmap provides a comprehensive overview of the current landscape of UV-C photodetection, spanning established and emerging material platforms (Ga2O3, AlGaN, BN, diamond, MgZnO, 2-dimensional materials, metal halide perovskites, micro-electromechanical systems), and their applications in metrology, astronomy, communications, environmental monitoring, fire detection, missile warning, gas sensing, and medical diagnostics. By identifying opportunities, bottlenecks, and future directions, this roadmap aims to support both newcomers and established researchers, with the aim of accelerating the translation of UV-C photodetectors into impactful technologies.

physics.app-ph↗

arXiv2020

Red Luminescence in H-doped beta-Ga2O3

The effects of hydrogen incorporation into beta-Ga2O3 thin films have been investigated by chemical, electrical and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma doping without any structural alterations of the film; however, X-ray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that the near-surface region of the H-doped Ga2O3 film exhibits a distinct red luminescence (RL) band at 1.9 eV. The emergence of the H-related RL band is accompanied by an enhancement in the electrical conductivity of the film by an order of magnitude. Temperature-resolved CL points to the formation of abundant H-related donors with a binding energy of 28 +/- 4 meV. The RL emission is attributed to shallow donor-deep acceptor pair recombination, where the acceptor is a VGa-H complex and the shallow donor is interstitial H. The binding energy of the VGa-H complex, based on our experimental considerations, is consistent with the computational results by Varley et al [J. Phys.: Condens. Matter, 23, 334212, 2011].

cond-mat.mtrl-sci↗