arXiv subjects

Filippo Giubileo

Publications and source records attributed to Filippo Giubileo.

29 records · Page 2Linked to original sources

arXiv2016

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.

cond-mat.mes-hall↗

arXiv2016

Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate

We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at high voltages. We report a field-emission current density as high as 1uA/um between graphene flakes. These findings are essential for the miniaturization of atomically thin devices.

cond-mat.mes-hall↗

arXiv2015

Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics

We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.

cond-mat.mes-hall↗

arXiv2014

Local characterization of ferromagnetic properties in ferromagnet/superconductor bilayer by Point Contact Andreev Reflection Spectroscopy

We realized point contact spectroscopy experiment on ferromagnet/superconductor bilayers. Differential conductance curves show several features that we explained within Bogoliubov-de Gennes formalism considering the presence of two interfaces in the normal-metal-tip/ferromagnet/superconductor device. We demonstrate that such configuration is suitable as local probe of the spin polarization and thickness of ferromagnetic layer, directly on bilayer areas. This is due to the high sensitivity of the Andreev surface states to the physical properties of the ferromagnetic interlayer.

cond-mat.supr-con↗

arXiv2011

Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors

We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and metal electrodes, while charge storage at the graphene/SiO2 interface enhances it. Considering different Fermi energy from the neutrality point along the channel and partial charge pinning at the contacts, we propose a model which explains all features in gate voltage loops.

cond-mat.mes-hall↗

arXiv2010

Andreev reflection in ferrimagnetic CoFe2O4/SrRuO3 spin filters

We have performed point contact spectroscopy measurements on a sample constituted by a metallic ferromagnetic oxide (SrRuO_3) bottom electrode and a tunnel ferrimagnetic (CoFe_2O_4) barrier. Andreev reflection is observed across the tunnel barrier. From the comparison of Andreev reflection in SrRuO3 and across the CoFe_2O_4 barrier we infer that the ferrimagnetic barrier has a spin filter efficiency not larger than +13%. The observation of a moderate and positive spin filtering is discussed in the context of the microstructure of the barriers and symmetry-related spin filtering effects.

cond-mat.mtrl-sci↗

arXiv2006

Point-Contact Spectroscopy on RuSr2GdCu2O8

We present Point-Contact experiments on polycrystalline RuSr$_2$GdCu$_2$O$_8$ samples. The majority of tunneling curves shows a zero-bias conductance peak, which is modeled by assuming a d-wave pairing symmetry of the superconducting order parameter.The magnetic field dependence of the conductance spectra has been measured in very stable junctions. In some cases, due to the granularity of the samples, clusters of grains in series introduce peculiar features in the conductance spectra.

cond-mat.supr-con↗

arXiv2006

Point Contact Spectra on YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ bilayers

We present conductance characteristics of point contact junctions realized between a normal Pt-Ir tip and YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ (YBCO/LCMO) bilayers. The point contact characteristics show a zero bias conductance peak, as a consequence of the formation of Andreev bound states at the YBCO Fermi level. The temperature evolution of the spectra reveals a depressed zero bias peak and a reduced superconducting energy gap, both explainable in terms of spin polarization effects due to the LCMO layer.

cond-mat.supr-con↗

arXiv2006

Subharmonic gap structures and Josephson effect in MgB2/Nb micro-constrictions

Superconducting micro-constrictions between Nb tips and high quality MgB$_{2}$ pellets have been realized by means of a point-contact inset, driven by a micrometric screw. Measurements of the current-voltage characteristics and of the dynamical conductance versus bias have been performed in the temperature range between 4.2 K and 500 K. Above the Nb critical temperature T$_{C}^{Nb}$, the conductance of the MgB$_2$/normal-metal constrictions behaves as predicted by the BTK model for low resistance contacts while high resistance junctions show quasiparticle tunneling characteristics. Consistently, from the whole set of data we infer the value $Δ_π = 2.5 \pm 0.2$ meV for the three-dimensional gap of MgB$_2$. Below T$_{C}^{Nb}$, low resistance contacts show Josephson current and subharmonic gap structures (SGS), due to multiple Andreev reflections. Simultaneous observations of both features, unambiguously indicate coupling of the 3D band of MgB$_2$ with the Nb superconducting order parameter. We found that the temperature dependence of the Josephson critical current follows the classical Ambegaokar-Baratoff behavior with a value $I_CR_N=(2.1 \pm 0.1)$ meV at low temperatures.

cond-mat.supr-con↗

arXiv2006

Pairing state in the rutheno-cuprate superconductor RuSr2GdCu2O8: A point contact Andreev Reflection Spectroscopy study

The results of Point Contact Andreev Reflection Spectroscopy on polycrystalline RuSr$_2$GdCu$_2$O$_8$ pellets are presented. The wide variety of the measured spectra are all explained in terms of a modified BTK model considering a \emph{d-wave} symmetry of the superconducting order parameter. Remarkably low values of the energy gap $Δ=(2.8\pm 0.2)meV$ and of the $2Δ/k_BT_c\simeq 2$ ratio are inferred. From the temperature evolution of the $dI/dV$ vs $V$ characteristics we extract a sublinear temperature dependence of the superconducting energy gap. The magnetic field dependence of the conductance spectra at low temperatures is also reported. From the $Δ$ vs $H$ evolution, a critical magnetic field $H_{c_2}\simeq 30 T$ is inferred. To properly explain the curves showing gap-like features at higher voltages, we consider the formation of a Josephson junction in series with the Point Contact junction, as a consequence of the granularity of the sample.

cond-mat.supr-con↗

arXiv2005

Point Contact Study of the Superconducting Order Parameter in RuSr2GdCu2O8

We have performed a detailed study of the conductance characteristics obtained by point contact junctions realized between a normal Pt/Ir tip and syntered RuSr2GdCu2O8 (Ru-1212) samples. Indeed, this compound is subject of great interest due to the coexistence of both magnetic order and bulk superconductivity. In our experiments, the low temperature tunneling spectra reproducibly show a zero bias conductance peak that can be well reproduced by a generalized BTK model in the case of d-wave symmetry of the superconducting order parameter.

cond-mat.supr-con↗