Firoz Khan | Searcharxiv

arXiv2025

Mitigating effects of nonlinearities in homodyne quadrature interferometers

Homodyne Quadrature interferometers (HoQI) are an interferometric displacement sensing scheme proven to have excellent noise performance, making them a strong candidate for sensing and control schemes in gravitational wave detector seismic isolation. Like many interferometric schemes, HoQIs are prone to nonlinear effects when measuring displacements. These nonlinearities, if left unsuppressed, would substantially limit the use cases of HoQIs. This paper first shows a means of measuring and quantifying nonlinearities using a working HoQI and a mechanical resonator. We then demonstrate a method for real-time correction of these nonlinearities and several approaches for accurately calibrating the correction technique. By correcting in real time, we remove one of the biggest obstacles to including HoQIs in upgrades to future gravitational wave detectors. Finally, we discuss how to post correct data from HoQIs, suppressing even further the nonlinearity-induced errors, broadening the appeal of such sensors to other applications where measurement data can be reconstructed after the fact. We demonstrate all of this on a working HoQI system and show the measured suppression of nonlinear effects from each of these methods. Our work makes HoQIs a more broadly applicable tool for displacement sensing.

physics.ins-det↗

arXiv2024

Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution

Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through doping or intercalation. In this study, we investigated the electronic properties of Hf doped ZrSe2 single crystals using angle-resolved photoemission spectroscopy (ARPES) combined with first principles density functional theory (DFT) calculations. It is observed that the valence band maxima of ZrSe2, located below the Fermi level, undergo a significant change with the introduction of Hf substitution. Hf can introduce extra charges into the conduction band, rather than making a mixed structure of HfSe2 and ZrSe2 band structure, which can cross the Fermi level. Compared to the semiconducting band structure of ZrSe2, we observed that the conduction band crosses the Fermi level at the high symmetry M point in Hf-doped ZrSe2. This suggests an increase of electron type carriers around the Fermi level, resulting in an extrinsic charge carrier density in the conduction band, which can form a metallic behaviour. It can be noticed that the Hf cations can create disorder in the form of excess atoms of Zr, which yields more carriers in the conduction band in the shape of smeared bands. The tails of the smeared band occupied the d-orbitals extended into the Fermi level and left the d band below. Similarly, the electrical resistance measurements further confirm the metallic-like character of Hf doped ZrSe2 compared to the semiconductor ZrSe2, indicating increased carriers. This metallic like behavior is suggested to be predisposed by the extrinsic electrons induced by the substitutional disorder. This study further demonstrates the possibility of band gap engineering through heavy metal doping in 2D materials.

cond-mat.mtrl-sci↗