SearcharxivSearch

arXiv subjects

Florian Beckfeld

Publications and source records attributed to Florian Beckfeld.

2 recordsLinked to original sources

Non-invasive monitoring of process-relevant plasma parameters by Fiber PROES in capacitively coupled Ar/CF$_4$ plasmas

Monitoring changes of process-relevant plasma parameters, such as the electron density and ion flux to the wafer, is essential for the development and control of plasma processes. However, invasive plasma diagnostics, such as probe measurements, typically cannot be applied to commercial reactors. At the example of a low pressure capacitive radio frequency discharge operated in different mixtures of CF$_4$ and Ar, we demonstrate that changes of such plasma parameters can be monitored non-invasively by phase resolved optical emission spectroscopy via optical fibers (Fiber PROES), for which the ports are usually available at industrial plasma sources. In this way, the spatio-temporally resolved dynamics of energetic electrons are tracked by observing a selected emission line. By measuring the electron density and ion flux directly via probe and retarding field energy analyzer diagnostics as a function of driving voltage and pressure, changes of these plasma parameters, including hysteresis effects, are found to be correlated with transitions of the electron power absorption mode revealed by Fiber PROES. Such mode transitions cause the electron energy distribution function (EEDF) to change and, thus, affect such plasma parameters. Based on these findings, Fiber PROES can be used as a non-invasive diagnostic for the monitoring and knowledge-based development of plasma processes.

physics.plasm-ph

Multi-diagnostic characterization of inductively coupled discharges with tailored waveform substrate bias for precise control of plasma etching

Precise control of ion energy distribution functions (IEDF) is crucial for selectivity as well as control over sputter rate and substrate damage in nanoscale plasma processes. In this work, a low frequency (100 kHz) tailored pulse-wave-shaped bias voltage waveform is applied to the substrate electrode of an inductively coupled plasma (ICP) and its effects on the IEDF, electron density, electron dynamics and the etch rates of silicon dioxide as well as amorphous silicon are investigated in a commercial 200 mm reactive ion etching (RIE) reactor. While the tailored waveform substrate bias hardly affects the electron density above the substrate and the spatio-temporally resolved electron power absorption dynamics, it is found to affect the ion flux to the substrate at high ICP source powers. Monoenergetic IEDFs with a full width at half maximum (FWHM) below 10 eV are realized with mean ion energies ranging from 20 eV to 100 eV in both argon and SF6. Such monoenergetic IEDFs are used to determine the Ar ion sputter threshold energies of amorphous silicon and silicon dioxide to be 23 eV and 37 eV, respectively, and to realize selective etching of these two materials by Ar ion sputtering based on tailoring the IEDF to ensure that all incident ions are within this narrow ion energy selectivity window.

physics.plasm-ph