arXiv subjects

Florian Disdier

Publications and source records attributed to Florian Disdier.

4 recordsLinked to original sources

arXiv2025

Intrinsic Annealing in a Hybrid Memristor-Magnetic Tunnel Junction Ising Machine

Hardware implementations of the Ising model offer promising solutions to large-scale optimization tasks. In the literature, various nanodevices have been shown to emulate the spin dynamics for such Ising machines with remarkable effectiveness. Other nanodevices have been shown to implement spin-spin coupling with compact footprint and minimal energy dissipation. However, an ideal Ising machine would associate both types of nanodevices, and they must operate synergistically to support annealing: a progressive reduction of machine stochasticity that allows it to settle to energy minimum. Here, we report an Ising machine that combines two nanotechnologies: memristor crossbar -- storing multi-level couplings -- and stochastic magnetic tunnel junction (SMTJ), acting as thermally driven spins. Because the same read voltage that interrogates the crossbar also biases the SMTJs, increasing this voltage automatically lowers the effective temperature of the machine, providing an intrinsic, nearly circuit-free annealing technique. Operating at zero magnetic field, our prototype consistently reaches the global optimum of a 24-vertex weighted MAX-CUT and a 10-vertex, three-color graph-coloring problem. Given that both nanotechnologies in our demonstrator are CMOS-integrated, this approach is compatible with advanced 3D integration, offering a scalable pathway toward compact, fast, and energy-efficient large-scale Ising solvers.

cs.ET↗

arXiv2024

Altermagnetic variants in thin films of Mn5Si3

The altermagnet candidate Mn5Si3 has attracted wide attention in the context of non-relativistic spin physics, due to its composition of light elements. However, the presumed structure of the altermagnetic phase had yet to be demonstrated. In this study, we demonstrate a hallmark of altermagnetism in Mn5Si3 thin films, namely the three options, or variants, for the checkerboard distribution of the magnetic Mn atoms. The magnetic symmetries were altered by field-rotation of the N\'eel vector along relevant crystal directions, resulting in anomalous Hall effect anisotropy. The experimental results in nanoscale devices were corroborated by a theoretical model involving atomic site dependent anisotropy and bulk Dzyaloshinskii-Moriya interaction for a single variant.

cond-mat.mes-hall↗

arXiv2024

Entropy-Assisted Nanosecond stochastic operation in perpendicular superparamagnetic tunnel junctions

We demonstrate a good agreement between mean dwell times measured in 50~nm diameter, perpendicularly magnetized superparamagnetic tunnel junctions (SMTJ), and theoretical predictions based on Langer's theory. Due to a large entropic contribution, the theory yields Arrhenius prefactors in the femtosecond range for the measured junctions, in stark contrast to the typically assumed value of 1~ns. Thanks to the low prefactors, and fine-tuning of the perpendicular magnetic anisotropy, we report measured mean dwell times as low as 2.7~ns under an in-plane applied field at negligible bias voltage. Under a perpendicular applied field, we predict a Meyer-Neldel compensation phenomenon, whereby the prefactor scales like an exponential of the activation energy, in line with the exponential dependence of the measured dwell time on the field. We further predict the occurrence of (sub)nanosecond dwell times as a function of effective anisotropy and junction diameter at zero bias voltage. These findings pave the way towards the development of ultrafast, low-power, unconventional computing schemes operating by leveraging thermal noise in perpendicular SMTJs, which can be scaled down below 20~nm.

cond-mat.mtrl-sci↗

arXiv2023

Electrical detection and nucleation of a magnetic skyrmion in a magnetic tunnel junction observed via operando magnetic microscopy

Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be further manipulated by both gate voltage and external magnetic field, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.

cond-mat.mtrl-sci↗