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Florian Hirsch

Publications and source records attributed to Florian Hirsch.

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Quantum Simulation of Semiconductor Excitons in Ultracold Dipolar Fermi Gases

Inspired by the progress on the study of exciton physics in atomically thin transition metal dichalcogenide (TMD) semiconductors, we investigate the formation of analogs of excitons in cold atomic systems. To this end, we consider single-component fermions comprised of ultracold ground-state molecules or dipolar atoms in a hexagonal optical lattice. An energy offset between triangular sublattices opens up a band gap with degeneracies at the K/K' points as in TMDs. We predict the existence of cold atomic excitons and show that cold atoms allow us to study excitons from the weak-coupling regime, where effective mass models apply, to the strong-interaction regime, described by flat-band models. We demonstrate how these excitons can be observed using lattice modulation spectroscopy, and how their wave functions can be mapped out using quantum gas microscopy. Firmly establishing the idea of quantum simulation of semiconductor physics, this work lays the foundation for simulating complex electronic states such as trions, polarons and excitonic insulators.

cond-mat.quant-gas

Infrared Study of Charge Carrier Confinement in Doped (6,5) Carbon Nanotubes

Electronic degrees of freedom and their coupling to lattice vibrations in semiconductors can be strongly modified by doping. Accordingly, the addition of surplus charge carriers to chirality-mixed carbon nanotube samples has previously been found to give rise to a Drude-type plasmon feature as well as Fanotype antiresonances in the far- to mid-infrared spectral range (FIR/MIR). Here we investigate the FIR/MIR response of redox-chemically doped semiconducting (6,5) carbon nanotubes (s-SWNTs). We find that, contrary to expectations, the Drude-type plasmon shifts to lower wavenumbers with increasing doping level. By means of Monte-Carlo simulations of the optical response, we attribute this behavior to the confinement of excess charge carriers at low doping levels and their progressive delocalization when approaching degenerate doping. The coupling of vibrational modes to intraband excitations in the doped s-SWNTs can be probed via a double resonance process similar to that responsible for the Raman D-band. The resulting Fano antiresonances shed new light onto the character and coupling of electronic and vibrational degrees of freedom in these one-dimensional semiconductors.

physics.chem-ph