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Florian Merget

Publications and source records attributed to Florian Merget.

11 recordsLinked to original sources
arXiv2025

A focusing optical phased array for tissue interrogation with side-lobe suppression and simplified beam steering

We implement an integrated multi-electrode array on a silicon-nitride-based photonic integrated circuit for ex-vivo retinal characterization via optical stimulation. The interrogation beam formers, based on curved grating emitters and optical phased arrays, are designed to achieve transverse focusing with spot sizes in the 1 - 2 $\mu$m range to target single cells. The experimentally realized focusing optical phased arrays show suppressed side-lobes, with approximately 11.5% of the power in each side-lobe and ~60% in the main lobe, reducing unintentional cellular excitation. Additional design refinement enables further suppression of the side-lobes to a few percent of the total power. Additionally, we demonstrate a compact design of meandered thermal phase shifters implemented across the array that allow push-pull steering in the transverse direction as well as focusing and defocusing of the beam, with a total of only four control signals. Transverse angular steering by $\pm$5.1{\deg} and axial translation of the focal spot by 204 $\mu$m are demonstrated with tuning currents below 50 mA, together with longitudinal angular steering by 4.26{\deg} obtained by means of wavelength tuning in a $\pm$15 nm range centered on 525 nm.

physics.optics↗
arXiv2024

An efficient singlet-triplet spin qubit to fiber interface assisted by a photonic crystal cavity

We introduce a novel optical interface between a singlet-triplet spin qubit and a photonic qubit which would offer new prospects for future quantum communication applications. The interface is based on a 220 nm thick GaAs/Al-GaAs heterostructure membrane and features a gate-defined singlet-triplet qubit, a gate-defined optically active quantum dot, a photonic crystal cavity and a bot-tom gold reflector. All essential components can be lithographically defined and deterministically fabricated, which greatly increases the scalability of on-chip in-tegration. According to our FDTD simulations, the interface provides an overall coupling efficiency of 28.7% into a free space Gaussian beam, assuming an SiO2 interlayer filling the space between the reflector and the membrane. The performance can be further increased to 48.5% by undercutting this SiO2 interlayer below the photonic crystal.

physics.optics↗
arXiv2023

Modeling of an efficient singlet-triplet spin qubit to photon interface assisted by a photonic crystal cavity

Efficient interconnection between distant semiconductor spin qubits with the help of photonic qubits would offer exciting new prospects for future quantum communication applications. In this paper, we optimize the extraction efficiency of a novel interface between a singlet-triplet spin qubit and a photonic qubit. The interface is based on a 220 nm thick GaAs/AlGaAs heterostructure membrane and consists of a gate-defined double quantum dot (GDQD) supporting a singlet-triplet qubit, an optically active quantum dot (OAQD) consisting of a gate-defined exciton trap, a photonic crystal cavity providing in-plane optical confinement and efficient out-coupling to an ideal free space Gaussian beam while accommodating the gate wiring of the GDQD and OAQD, and a bottom gold reflector to recycle photons and increase the optical extraction efficiency. All essential components can be lithographically defined and deterministically fabricated on the GaAs/AlGaAs heterostructure membrane, which greatly increases the scalability of on-chip integration. According to our simulations, the interface provides an overall coupling efficiency of 28.7% into a free space Gaussian beam, assuming an SiO2 interlayer filling the space between the reflector and the membrane. The performance can be further increased by undercutting this SiO2 interlayer below the photonic crystal. In this case, the overall efficiency is calculated to be 48.5%.

physics.optics↗
arXiv2021

Silicon Nitride External Cavity Laser with Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter right at the edge of the silicon nitride chip that relaxes the required alignment to the III-V gain chip and equally splits the power among its two output waveguides. Both the ground and first order mode are excited in the coupler and reach the quadrature condition at the waveguide junction, ensuring equal power to be coupled to both. Two high-quality-factor ring resonators arranged in Vernier configuration close a Sagnac loop between the two waveguides. In addition to wideband frequency tuning, they result in a longer effective cavity length. The alignment tolerant coupler increases the alignment tolerance in the two directions parallel to the chip surface by a factor 3 relative to conventional edge couplers, making it ideal for gain chip integration via pick-and-place technology. Lasing is maintained in a misalignment range of $\pm$6 $\mu$m in the direction along the edge of the chip. A Lorentzian laser linewidth of 42 kHz is achieved.

physics.optics↗
arXiv2020

Photonic integrated circuits for life sciences

We report on the use of silicon nitride (SiN) photonic integrated circuits (PICs) in high-value instrumentation, namely multi-color laser engines (MLEs), a core element of cutting-edge biophotonic systems applied to confocal microscopy, fluorescent microscopy - including super-resolution stimulated emission depletion (STED) microscopy - flow cytometry, optogenetics, genetic analysis and DNA sequencing, to name just a few. These have in common the selective optical excitation of molecules - fluorophores, or, in the case of optogenetics, light-gated ion channels - with laser radiation falling within their absorption spectrum. Unambiguous identification of molecules or cellular subsets often requires jointly analyzing fluorescent signals from several fluorescent markers, so that MLEs are required to provide excitation wavelengths for several commercially available biocompatible fluorophores. A number of functionalities are required from MLEs in addition to sourcing the required wavelengths: Variable attenuation and/or digital intensity modulation in the Hz to kHz range are required for a number of applications such as optical trapping, lifetime imaging, or fluorescence recovery after photobleaching (FRAP). Moreover, switching of the laser between two fiber outputs can be utilized for example to switch between scanning confocal microscopy and widefield illumination modes, for instance, for conventional fluorescence imaging.

physics.ins-det↗
arXiv2020

Silicon Photonics DWDM NLFT Soliton Transmitter

We investigate the transmission of densely multiplexed solitons using a photonic integrated chip and the nonlinear Fourier-transform and analyze required launch conditions, the effect of (de-)multiplexing and noise on the nonlinear spectrum, and equalization techniques that can be used to enhance the transmission performance.

eess.SP↗
arXiv2018

Semiconductor laser mode locking stabilization with optical feedback from a silicon PIC

Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems remains however burdened by their strong sensitivity to back-reflections, quickly destroying the coherence of the mode-locking. Here, we investigate the stabilization of mode-locked lasers directly edge coupled to a silicon photonic integrated circuit, with the objective of moving isolators downstream to the output of the photonic circuit. A 2.77 kHz 3 dB RF linewidth, substantially improved compared to the 15.01 kHz of the free running laser, is obtained in the best case. Even in presence of detrimental reflections from the photonic circuit, substantial linewidth reductions from 20 kHz to 8.82 kHz, from 572 kHz to 14.8 kHz, and from 1.5 MHz to 40 kHz are realized.

physics.app-ph↗
arXiv2016

Stabilization and frequency control of a DFB laser with a tunable optical reflector integrated in a Silicon Photonics PIC

We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop multiplexer. Controlled optical feedback allows for fine-tuning of the laser oscillation frequency. Under certain conditions it also allows suppression of bifurcation modes triggered by reflections occurring elsewhere on the chip. A semi-analytical model describing laser dynamics under combined optical feedback from the input facet of the edge coupler and from the tunable on-chip reflector fits the measurements. Compensation of detrimental effects from reflections induced elsewhere on a transceiver chip may allow moving isolators downstream in future communications systems, facilitating direct hybrid laser integration in Silicon Photonics chips, provided a suitable feedback signal for a control system can be identified. Moreover, the optical frequency tuning at lower feedback levels can be used to form a rapidly tunable optical oscillator as part of an optical phase locked loop, circumventing the problem of the thermal to free carrier effect crossover in the FM response of injection current controlled semiconductor laser diodes.

physics.optics↗
arXiv2016

Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser

We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gbps is shown to be compatible with standard 7% overhead hard decision forward error correction. Silicon Photonics transmitter and receiver chips are hybridly integrated with driver and receiver electronics. A detailed link model is derived and verified. Particular emphasis is placed on accurate system level modeling of laser RIN, SOA amplified spontaneous emission noise and receiver noise. The impact of the electrical receiver bandwidth and non-Gaussian statistics on level dependent amplified spontaneous emission noise are investigated in detail. The channel count scalability as limited by SOA saturation is further analyzed taking cross gain modulation and four wave mixing into account. While semiconductor mode-locked lasers have been identified as a potential light source for low cost Datacom WDM transceivers for some time, this is, to the best of our knowledge, the first comprehensive investigation of the overall link budget in a Silicon Photonics implementation showing this technology to be a credible contender for low latency datacenter interconnects.

physics.optics↗
arXiv2013

Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides

We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-P\'erot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 dB and 3.1 dB, as well as excellent 1 dB horizontal loss misalignment ranges of respectively 2.8 um and 3.8 um (worst case over both in-plane axes) have been measured for the two devices. Back-reflections to the laser are below -20 dB for both devices within the 1 dB misalignment range. Devices were fabricated with 193 nm DUV optical lithography and are compatible with mass-manufacturing with mainstream CMOS technology.

physics.optics↗