arXiv subjects

Frédéric Chassot

Publications and source records attributed to Frédéric Chassot.

5 recordsLinked to original sources

arXiv2026

Ultrafast dynamics of excitons in black phosphorus

Excitons are key quasiparticles determining the optical properties of solids. As such, they can be utilized to coherently control the electronic structure of materials using optical femtosecond pulses. Identifying the decoherence mechanism during the early non-equilibrium dynamics is crucial to achieve light-induced band-structure engineering in semiconductors. Here, we generate excitons in the direct band gap semiconductor black phosphorus with a resonant mid-infrared photoexcitation. Using time- and angle-resolved photoemission spectroscopy, we track their complex ultrafast dynamics on the few-picosecond time scale. We develop a quantum-kinetic theoretical framework to model the decoherence of excitons into dark excitons via phonon scattering. By combining simulation and experiment, we quantify key parameters describing the early dynamics of the excitons. Our work highlights phonon-mediated intravalley scattering as a fundamental limitation for coherent exciton phenomena in single-valley semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Detection of Image Potential States above the vacuum level in GeTe

The ferroelectric semiconductor α-GeTe(111) has attracted significant attention in the last decade due to its unique properties, with extensive studies focusing on its occupied electronic bandstructure. In contrast, its unoccupied states - particularly those near the conduction band minimum - remain largely unexplored. In an effort to characterize those states, we surprisingly observe three image potential states (IPS) in α-GeTe(111) extending up to 0.8 eV above the vacuum level. Using time and angle-resolved photoemission spectroscopy, we resolve the full parabolic dispersions of the first three IPS and determine their binding energies. Our analysis, combined with Bloch spectral function calculations, reveals that the unexpected persistence of IPS above the vacuum level originates from strong dipole transitions and the presence of large electron reservoirs in GeTe.

cond-mat.str-el↗

arXiv2025

Suppression of stripe-ordered structural phases in monolayer IrTe$_2$ by a gold substrate

Metal-assisted exfoliation of two-dimensional (2D) materials has emerged as an efficient route to isolating large-area monolayer crystals, yet the influence of the supporting metal substrate on their intrinsic properties remains poorly understood. Here, we demonstrate successful gold-assisted exfoliation of monolayer IrTe$_2$ up to the millimeter scale. Angle-resolved photoemission spectroscopy (ARPES), combined with first-principles calculations, reveals that the low-energy electronic structure closely resembles that of a freestanding monolayer 1T-IrTe$_2$. We find that quasi-covalent hybridization together with substrate-induced strain leads to only modest modifications of the electronic bands. Although strain contributes to phase stability, it is essentially hybridization that drives the stabilization of the 1T-phase of the monolayer IrTe$_2$ by suppressing stripe-ordered phase transitions. These results establish gold-assisted exfoliation as a robust route to prepare a large-area monolayer IrTe$_2$ and highlight the role of metal-substrate interaction in engineering 2D materials with tailored structural phases.

cond-mat.mtrl-sci↗

arXiv2025

Conduction Band Structure and Ultrafast Dynamics of Ferroelectric $α$-GeTe(111)

$α$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) material for which a significative lattice distortion combined with a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface, which have been intensively probed in the occupied valence states using static angle-resolved photoemission spectroscopy (ARPES). Nevertheless, its unoccupied conduction band structure remains unexplored, in particular the experimental determination of its electronic band gap across momentum space. Using time-resolved ARPES based on high-repetition rate and extreme ultraviolet femtosecond (fs) laser, we unveil the band structure of $α$-GeTe(111) in the full Brillouin zone, both in the valence and conduction states, as well as the exploration of its out-of-equilibrium dynamics. Our work confirms the semiconducting nature of $α$-GeTe(111) with a 0.85 eV indirect band gap, which provides an upper limit for comparison to density functional theory calculations. We finally reveal the dominant scattering mechanisms of photoexcited carriers during the out-of-equilibrium dynamics under fs light pulses.

cond-mat.mtrl-sci↗

arXiv2023

Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature

The ferroelectric semiconductor $α$-SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the last decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk states. Here, we investigate the low-energy electronic structure of $α$-SnTe with ARPES and follow the evolution of the bulk-state Rashba splitting as a function of temperature, across its ferroelectric critical temperature of about $T_c\sim 110$ K. Unexpectedly, we observe a persistent band splitting up to room temperature, which is consistent with an order-disorder contribution to the phase transition that requires the presence of fluctuating local dipoles above $T_c$. We conclude that no topological surface state can occur at the (111) surface of SnTe, at odds with recent literature.

cond-mat.mtrl-sci↗