arXiv subjects

Frédéric Fossard

Publications and source records attributed to Frédéric Fossard.

12 recordsLinked to original sources

arXiv2026

Networking Molecular Quantum Emitters on a Single Chain : From Single to Cooperative Emitters

Engineering light-matter interactions between multiple free-space quantum emitters is a central challenge for scalable quantum photonic technologies. In particular, accessing regimes of coherent emitter-emitter interactions, where several emitters are coupled through a shared electromagnetic environment, is essential for coherent emission and quantum functionalities. Such interactions require precise control over emitter separation and stabilization at sub-wavelength distances, a level of spatial organization that remains extremely difficult to achieve at the molecular scale in solid-state systems. Here we introduce Encoded Quantum Chains (EQC), a one-dimensional architecture in which cooperative radiative behaviour is programmed through spatial encoding of identical molecular emitters. Organic emitters and inert spacer molecules are co-encapsulated inside dielectric boron nitride nanotubes (BNNTs), enabling statistical control of intermolecular spacing from nanometres to micrometres while enforcing dipole alignment and one-dimensional confinement. Time-resolved fluorescence under ambient conditions reveals accelerated radiative decay, enhanced emission rates per emitter, and the emergence of non-mono-exponential dynamics as spacing falls below the optical wavelength, consistent with cooperative radiative states in one dimension. Bundling of EQCs enables coupling between emitters in neighbouring BNNTs, driving a dimensional crossover toward higher-dimensional delocalisation of the excitation. This modular building-block approach provides a scalable route to engineer light-matter interactions and many-body optical phenomena in confined molecular systems, opening new opportunities for distributed single-photon sources, programmable quantum emitters, and photonic architectures for quantum technologies.

cond-mat.mtrl-sci↗

arXiv2025

Straightforward Method to Orient Black Phosphorus from Bulk to Thin Layers using a Standard Green Laser

The crystallographic orientation of anisotropic 2D materials plays a crucial role in their physical properties and device performance. However, standard orientation techniques such as transmission electron microscopy (TEM) or X-ray diffraction (XRD) can be complex and less accessible for routine characterization. In this study, we investigate the orientation of black phosphorus (BP) from bulk crystals to thin layers using angle-resolved polarized Raman spectroscopy (ARPRS) with a single-wavelength (514 nm) Raman setup. By incorporating thickness-dependent interference effects and anisotropic optical indices, this approach provides a reliable framework for orientation determination across different BP thicknesses. The method is validated through direct orientation measurements using TEM and Electron Backscattering Diffraction (EBSD), confirming its applicability to both thick and ultrathin samples. Given its simplicity and compatibility with widely available Raman setups, this approach offers a practical solution for characterizing BP orientation without requiring advanced structural characterization techniques.

cond-mat.mes-hall↗

arXiv2025

Exciton self-trapping in twisted hexagonal boron nitride homostructures

One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a selftrapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted hBN-hBN structures. Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and the small size of their excitons.

cond-mat.mtrl-sci↗

arXiv2024

High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE

Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to graphene non-wetting properties, h-BN growth starts preferentially from the graphene ledges. We use this fact here to selectively promote growth of high-quality flat h-BN on epigraphene by patterning epigraphene microstructures prior to BN growth. Thin h-BN films (down to 6 nm) grown by MOVPE show smooth and pleated surface morphology on epigraphene, while crumpled BN is observed on the SiC. Cross-sectional high-resolution transmission electron microscopy images and fluorescence imaging confirm the higher BN quality grown on the epigraphene. Transport measurements reveal p-doping as expected from hydrogen intercalation of epigraphene and regions of high and low mobility. This method can be used to produce structurally uniform high-quality h-BN/epigraphene micro/nano scale heterostructure.

cond-mat.mtrl-sci↗

arXiv2023

Distinguishing different stackings in layered materials via luminescence spectroscopy

Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from ``indirect'', finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed.

cond-mat.mtrl-sci↗

arXiv2022

Colloidal Synthesis of Nanoparticles: from Bimetallic to High Entropy Alloys

At the nanometric scale, the synthesis of a random alloy (i.e. without phase segregation, whatever the composition) by chemical synthesis remains a not easy task, even for simple binary type systems. In this context, a unique approach based on the colloidal route is proposed enabling the synthesis of face-centred cubic and monodisperse bimetallic, trimetallic, tetrametallic and pentametallic nanoparticles with diameters around 5 nm as solid solutions. The Fe-Co-Ni-Pt-Ru alloy and its subsets are considered which is a challenging task as each element has fairly different physico-chemical properties. Nanoparticles are prepared by temperature-assisted co-reduction of metal acetylacetonate precursors in the presence of surfactants. It is highlighted how the correlation between precursors' degradation temperatures and reduction potentials values of the metal cations is the driving force to achieve a homogenous distribution of all elements within the nanoparticles.

cond-mat.mtrl-sci↗

arXiv2021

Ultrasonication-Induced Extraction of Inner Shells from Double-Wall Carbon Nanotubes Characterized via In Situ Spectroscopy after Density Gradient Ultracentrifugation

Even though ultrasonication is considered to be an effective method to disperse carbon nanotubes (CNTs), its devastating effects on the nanotubes are often neglected. Here, even mild ultrasonication is found to rapidly extract the inner single-wall CNTs (SWCNTs) from the outer shells of the double-wall CNTs (DWCNTs). As-synthesized DWCNTs are gently solubilized in a surfactant solution, strictly avoiding any ultrasonication, followed by two consecutive density gradient ultracentrifugation (DGU) steps to obtain a purified colloidal solution of isolated DWCNTs. The latter is carefully selected based on in situ resonant Raman (RRS) and fluorescence (PL) spectroscopy, measured as a function of depth directly in the ultracentrifuge tube after DGU. These purified DWCNTs are ultrasonicated in successive time steps while intermittently probing the sample via RRS and PL spectroscopy. These results unravel the very fast increasing yet saturating extraction mechanism that leads to the formation of fluorescing SWCNTs. A statistical high-resolution transmission electron microscopy study confirms the drastic increase in SWCNTs after ultrasonication, and evidences that ultrasonication forms SWCNTs from both the inner and outer shells of the DWCNTs. This study demonstrates how easily ultrasonication extracts SWCNTs from individually solubilized DWCNTs, unavoidably complicating any further spectroscopic studies on DWCNTs severely.

cond-mat.mes-hall↗

arXiv2020

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphene, making it ideally suited for graphene-based nanoelectronics. Here, we describe the preparation and characterization of multilayer h-BN grown epitaxially on EG using a migration-enhanced metalorganic vapor phase epitaxy process. As a result of the lateral epitaxial deposition (LED) mechanism, the grown h-BN/EG heterostructures have highly ordered epitaxial interfaces, as desired in order to preserve the transport properties of pristine graphene. Atomic scale structural and energetic details of the observed row-by-row, growth mechanism of the 2D epitaxial h-BN film are analyzed through first-principles simulations, demonstrating one-dimensional nucleation-free-energy-barrierless growth. This industrially relevant LED process can be applied to a wide variety of van der Waals materials.

cond-mat.mtrl-sci↗

arXiv2020

Assessing the reliability of the Raman peak counting method for the characterization of SWCNT diameter distributions: a cross-characterization with TEM

Resonant Raman spectroscopy is a widely used technique for single-walled carbon nanotube (SWCNT) characterization, in particular in the radial breathing mode (RBM) range which provides direct information on the structure of the nanotube in resonance. The RBM peak counting method, i.e. acquiring Raman spectrum grids on a substrate with a select set of discrete laser lines and counting RBM peaks as single nanotubes, is frequently used to characterize SWCNT growth samples, despite the many factors that can induce errors in the results. In this work, we cross-characterize the diameter distributions obtained through this methodology with diameter distributions obtained by counting SWCNT diameters in transmission electron microscopy (TEM) and discuss the different results and biases between the techniques. This study is performed on a broad diameter distribution sample, and on two chirality-enriched samples whose chirality distributions are determined by photoluminescence excitation spectroscopy (PLE) and statistical analysis of high resolution TEM (HRTEM) images. We show that the largest differences between the Raman peak counting and TEM diameter distributions stem from the chirality-dependence of SWCNT Raman cross-sections and the patchy vision offered by the use of only a few discrete excitation wavelengths. The effect of the substrate and TEM-related biases are also discussed.

cond-mat.mes-hall↗

arXiv2018

Tuning bimetallic catalysts for a selective growth of SWCNTs

Recent advances in structural control during the synthesis of SWCNTs have in common the use of bimetallic nanoparticles as catalysts, despite the fact that their exact role is not fully understood. We therefore analyze the effect of the catalyst' s chemical composition on the structure of the resulting SWCNTs by comparing three bimetallic catalysts (FeRu, CoRu and NiRu). A specific synthesis protocol is designed to impede the catalyst nanoparticle coalescence mechanisms and stabilize their diameter distributions throughout the growth. Owing to the ruthenium component which has a limited carbon solubility, tubes grow in tangential mode and their diameter is close to that of their seeding nanoparticle. By using as-synthesized SWCNTs as a channel material in field effect transistors, we show how the chemical composition of the catalysts and temperature can be used as parameters to tune the diameter distribution and semiconducting-to-metallic ratio of SWCNT samples. Finally, a phenomenological model, based on the dependence of the carbon solubility as a function of catalyst nanoparticle size and nature of the alloying elements, is proposed to interpret the results.

physics.app-ph↗

arXiv2017

Angular resolved electron energy loss spectroscopy in hexagonal boron nitride

Electron energy loss spectra have been measured on hexagonal boron nitride single crystals employing a novel electron energy loss spectroscopic set-up composed by an electron microscope equipped with a monochromator and an in-column filter. This set-up provides high-quality energy-loss spectra and allows also for the imaging of energy-filtered diffraction patterns. These two acquisition modes provide complementary pieces of information, offering a global view of excitations in reciprocal space. As an example of the capabilities of the method we show how easily the core loss spectra at the $K$ edges of boron and nitrogen can be measured and imaged. Low losses associated to interband and/or plasmon excitations are also measured. This energy range allows us to illustrate that our method provides results of quality comparable to those obtained from non resonant X-ray inelastic scattering, but with advantageous specificities such as an enhanced sensitivity at low q and a much higher simplicity and versatility that makes it well adapted to the study of two-dimensional materials and related heterostructures. Finally, by comparing theoretical calculations against our measures, we are able to relate the range of applicability of ab initio calculations to the anisotropy of the sample and assess the level of approximation required for a proper simulation of our acquisition method.

cond-mat.mtrl-sci↗

arXiv2017

Structural Properties of Double-Walled Carbon Nanotubes driven by Mechanical Interlayer Coupling

Structural identification of double-walled carbon nanotubes (DWNT) is presented through a robust procedure based on the latest generation of transmission electron microscope, making possible a statistical analysis based on numerous nano-objects. This approach reveals that inner and outer tubes of DWNTs are not randomly oriented, suggesting the existence of a mechanical coupling between the two concentric walls. With the support of atomic scale modelisations, we attribute it to the presence of incommensurate domains whose structures depend on the diameters and helicities of both tubes, and where inner tubes try to achieve a local stacking orientation to reduce strain effects.

cond-mat.mtrl-sci↗