arXiv subjects

François Ducastelle

Publications and source records attributed to François Ducastelle.

At least 19 recordsLinked to original sources

arXiv2023

Distinguishing different stackings in layered materials via luminescence spectroscopy

Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from ``indirect'', finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed.

cond-mat.mtrl-sci↗

arXiv2021

Simulation of thermodynamic properties of magnetic transition metals from an efficient tight-binding model

Atomic scale simulations at finite temperature are an ideal approach to study the thermodynamic properties of magnetic transition metals. However, the development of interatomic potentials explicitly taking into account magnetic variables is a delicate task. In this context, we present a tight-binding model for magnetic transition metals in the Stoner approximation. This potential is integrated into a Monte Carlo structural relaxations code where trials of atomic displacements as well as fluctuations of local magnetic moments are performed to determine the thermodynamic equilibrium state of the considered systems. As an example, the Curie temperature of cobalt is investigated while showing the important role of atomic relaxations. Furthermore, our model is generalized to other transition metals highlighting a local magnetic moment distribution that varies with the gradual filling of the d states. Consequently, the successful validation of the potential for different magnetic configurations indicates its great transferability makes it a good choice for atomistic simulations sampling a large configuration space.

cond-mat.mtrl-sci↗

arXiv2021

Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene

The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable bandgap, the existence of midgap states induced by dopants has been conjectured, but never confirmed experimentally. Here, we report scanning tunneling microscopy and spectroscopy results, supported by tight-binding calculations, that demonstrate the existence of midgap states in BLG. We show that the midgap state in BLG -- for which we demonstrate gate-tunability -- appears when the dopant is hosted on the non-dimer sublattice sites. We further evidence the presence of narrow resonances at the onset of the high energy bands (valence or conduction, depending on the dopant type) when the dopants lie on the dimer sublattice sites. These results suggest that dopants/defects can play an important role in the transport and optical properties of multilayer graphene samples, especially at energies close to the band extrema.

cond-mat.mes-hall↗

arXiv2021

Radiative lifetime of free excitons in hexagonal boron nitride

Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.

cond-mat.mtrl-sci↗

arXiv2020

Proper ab-initio dielectric function of 2D materials and their polarizable thickness

In this paper we derive a formalism allowing us to separate inter-layer contributions to the polarizability of a periodic array of 2D materials from intra-layer ones. To this aim, effective profile functions are introduced. They constitute a tight-binding-like layer-localized basis involving two lengths, the effective thickness $d$ characteristic of the 2D material and the inter-layer separation $L$. The method permits, within the same formalism, either to compute the single-layer dielectric function from an ab-initio periodic calculation (top-down strategy) or to stack several 2D materials to generate a finite-thickness van der Waals heterostructure (bottom-up strategy).

cond-mat.mtrl-sci↗

arXiv2020

The impact of stress on the electronic structure of phosphorus allotropes stacked on hexagonal boron nitride

We study the mechanical and electronic properties of heterobilayers composed of black phosphorus (BP) on hexagonal boron nitride (hBN) and of blue phosphorus (\Pblue) on hBN by means of ab-intio density functional theory. Emphasis is put on how the stress applied on the constituent layers impact their structural and electronic properties. For this purpose, we adopt a specific scheme of structural relaxation which allows us to distinguish between the energy cost of distorting each layer and the gain in stacking them together. In most cases we find that the BP tends to contract along the softer armchair direction, as already reported for similar structures. This contraction can attain up to 5\% of strain, which might deteriorate its very good transport properties along the armchair direction. To prevent this, we propose a twisted-bilayer configuration where the largest part of the stress applies on the zigzag axis, resulting in a lower impact on the transport properties of BP. We also investigated a \Pblue/hBN bilayer. A peculiar hybridization between the valence states of the two layers lets us suggest that electron-hole pairs excited in the bilayer will exhibit a mixed character, with electrons localized solely in the \Pblue{ }layer, and holes spread onto the two layers.

cond-mat.mtrl-sci↗

arXiv2019

Bright luminescence from indirect and strongly bound excitons in hBN

A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (hBN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield value of ~50% is found for hBN at 10 K comparable to that of direct bandgap semiconductors. This bright luminescence at 215 nm remains stable up to room temperature, evidencing the strongly bound character of excitons in bulk hBN. Ab initio calculations of the exciton dispersion confirm the indirect nature of the lowest-energy exciton whose binding energy is found equal to 300 meV, in agreement with the thermal stability observed in luminescence. The direct exciton is found at a higher energy but very close to the indirect one, which solves the long debated Stokes shift in bulk hBN.

cond-mat.mtrl-sci↗

arXiv2018

Entropy driven stability of chiral single-walled carbon nanotubes

Single-walled carbon nanotubes are hollow cylinders, that can grow centimeters long by carbon incorporation at the interface with a catalyst. They display semi-conducting or metallic characteristics, depending on their helicity, that is determined during their growth. To support the quest for a selective synthesis, we develop a thermodynamic model, that relates the tube-catalyst interfacial energies, temperature, and the resulting tube chirality. We show that nanotubes can grow chiral because of the configurational entropy of their nanometer-sized edge, thus explaining experimentally observed temperature evolutions of chiral distributions. Taking the chemical nature of the catalyst into account through interfacial energies, structural maps and phase diagrams are derived, that will guide a rational choice of a catalyst and growth parameters towards a better selectivity.

cond-mat.mtrl-sci↗

arXiv2018

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are carried out on the level of \textit{ab initio} many-body perturbation theory (GW and Bethe Salpeter equation) and by means of an appropriate tight-binding model. We confirm the change from direct to indirect electronic gap when going from single layer to bulk systems and we give a detailed account of its origin by comparing the effect of different stacking sequences. We emphasize that the inclusion of the electron-hole interaction is crucial for the correct description of the momentum-dependent dispersion of the excitations. It flattens the exciton dispersion with respect to the one obtained from the dispersion of excitations in the independent-particle picture. In the AB stacking this effect is particularly important as the lowest-lying exciton is predicted to be direct despite the indirect electronic band gap.

cond-mat.mtrl-sci↗

arXiv2018

Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride

We calculate the two-photon absorption in bulk and single layer hexagonal boron nitride (hBN) both by an ab-initio real-time Bethe-Salpeter approach and by a the real-space solution of the excitonic problem in tight-binding formalism. The two-photon absorption obeys different selection rules from those governing linear optics and therefore provides complementary information on the electronic excitations of hBN. Combining the results from the simulations with a symmetry analysis we show that two-photon absorption is able to probe the lowest energy $1s$ states in the single layer hBN and the lowest dark degenerate dark states of bulk hBN. This deviation from the "usual" selection rules based on the continuous hydrogenic model is explained within a simple model that accounts for the crystalline symmetry. The same model can be applied to other two-dimensional materials with the same point-group symmetry, such as the transition metal chalcogenides. We also discuss the selection rules related to the inversion symmetry of the bulk layer stacking.

cond-mat.mtrl-sci↗

arXiv2018

Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization

Hexagonal boron nitride (hBN) has been attracting great attention because of its strong excitonic effects. Taking into account few-layer systems, we investigate theoretically the effects of the number of layers on quasiparticle energies, absorption spectra, and excitonic states, placing particular focus on the Davydov splitting of the lowest bound excitons. We describe how the inter-layer interaction as well as the variation in electronic screening as a function of layer number $N$ affects the electronic and optical properties. Using both \textit{ab initio} simulations and a tight-binding model for an effective Hamiltonian describing the excitons, we characterize in detail the symmetry of the excitonic wavefunctions and the selection rules for their coupling to incoming light. We show that for $N > 2$, one can distinguish between surface excitons that are mostly localized on the outer layers and inner excitons, leading to an asymmetry in the energy separation between split excitonic states. In particular, the bound surface excitons lie lower in energy than their inner counterparts. Additionally, this enables us to show how the layer thickness affects the shape of the absorption spectrum.

cond-mat.mtrl-sci↗

arXiv2017

Exciton interference in hexagonal boron nitride

In this letter we report a thorough analysis of the exciton dispersion in bulk hexagonal boron nitride. We solve the ab initio GW Bethe-Salpeter equation at finite $\mathbf{q}\parallel ΓK$, and we compare our results with recent high-accuracy electron energy loss data. Simulations reproduce the measured dispersion and the variation of the peak intensity. We focus on the evolution of the intensity, and we demonstrate that the excitonic peak is formed by the superposition of two groups of transitions that we call $KM$ and $MK'$ from the k-points involved in the transitions. These two groups contribute to the peak intensity with opposite signs, each damping the contributions of the other. The variations in number and amplitude of these transitions determine the changes in intensity of the peak. Our results contribute to the understanding of electronic excitations in this systems along the $ΓK$ direction, which is the relevant direction for spectroscopic measurements. They also unveil the non-trivial relation between valley physics and excitonic dispersion in h--BN, opening the possibility to tune excitonic effects by playing with the interference between transitions. Furthermore, this study introduces analysis tools and a methodology that are completely general. They suggest a way to regroup independent-particle transitions which could permit a deeper understanding of excitonic properties in any system.

cond-mat.mes-hall↗

arXiv2017

Angular resolved electron energy loss spectroscopy in hexagonal boron nitride

Electron energy loss spectra have been measured on hexagonal boron nitride single crystals employing a novel electron energy loss spectroscopic set-up composed by an electron microscope equipped with a monochromator and an in-column filter. This set-up provides high-quality energy-loss spectra and allows also for the imaging of energy-filtered diffraction patterns. These two acquisition modes provide complementary pieces of information, offering a global view of excitations in reciprocal space. As an example of the capabilities of the method we show how easily the core loss spectra at the $K$ edges of boron and nitrogen can be measured and imaged. Low losses associated to interband and/or plasmon excitations are also measured. This energy range allows us to illustrate that our method provides results of quality comparable to those obtained from non resonant X-ray inelastic scattering, but with advantageous specificities such as an enhanced sensitivity at low q and a much higher simplicity and versatility that makes it well adapted to the study of two-dimensional materials and related heterostructures. Finally, by comparing theoretical calculations against our measures, we are able to relate the range of applicability of ab initio calculations to the anisotropy of the sample and assess the level of approximation required for a proper simulation of our acquisition method.

cond-mat.mtrl-sci↗

arXiv2016

Excitons in boron nitride single layer

Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining \textit{ab initio} calculations and a tight-binding-Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence ($π$) and conduction ($π^*$) bands the tight-binding analysis becomes quasi quantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground state exciton is not a genuine Frenkel exciton, but a very localized "tightly-bound" one. The other ones are similar to those found in transition metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.

cond-mat.mtrl-sci↗

arXiv2016

Dimensionality effects on the luminescence properties of hBN

Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6--6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers have been recorded. Strong modifications in the same UV range are observed and discussed within the general framework of 2D exciton properties in lamellar crystals.

cond-mat.mtrl-sci↗

arXiv2015

Size dependent phase diagrams of Nickel-Carbon nanoparticles

The carbon rich phase diagrams of nickel-carbon nanoparticles, relevant to catalysis and catalytic chemical vapor deposition synthesis of carbon nanotubes, are calculated for system sizes up to about 3 nanometers (807 Ni atoms). A tight binding model for interatomic interactions drives the Grand Canonical Monte Carlo simulations used to locate solid, core/shell and liquid stability domains, as a function of size, temperature and carbon chemical potential or concentration. Melting is favored by carbon incorporation from the nanoparticle surface, resulting in a strong relative lowering of the eutectic temperature and a phase diagram topology different from the bulk one. This should be taken into account in our understanding of the nanotube growth mechanisms.

physics.atm-clus↗

arXiv2014

Excitonic recombinations in hBN: from bulk to exfoliated layers

Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared to those of nanosheets mechanically exfoliated from them. First the link between the presence of structural defects and the recombination intensity of bound-excitons, the so-called D series, is confirmed. Low defective h-BN regions are further evidenced by CL spectral mapping (hyperspectral imaging), allowing us to observe new features in the near-band-edge region, tentatively attributed to phonon replica of exciton recombinations. Second the h-BN thickness was reduced down to six atomic layers, using mechanical exfoliation, as evidenced by atomic force microscopy. Even at these low thicknesses, the luminescence remains intense and exciton recombination energies are not strongly modified with respect to the bulk, as expected from theoretical calculations indicating extremely compact excitons in h-BN.

cond-mat.mtrl-sci↗

arXiv2013

Electronic structure of vacancy resonant states in graphene: a critical review of the single vacancy case

The resonant behaviour of vacancy states in graphene is well-known but some ambiguities remain concerning in particular the nature of the so-called zero energy modes. Other points are not completely elucidated in the case of low but finite vacancy concentration. In this article we concentrate on the case of vacancies described within the usual tight-binding approximation. More precisely we discuss the case of a single vacancy or of a finite number of vacancies in a finite or infinite system.

cond-mat.mtrl-sci↗