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Francesco Maccherozzi

Publications and source records attributed to Francesco Maccherozzi.

At least 19 recordsLinked to original sources

Revealing the origin of XMCD in an altermagnet via three-dimensional control of spins

Altermagnets are an emerging class of collinear antiferromagnets that exhibit unconventional spin-polarised electronic bands, potentially unlocking new functionalities that do not rely on spin-orbit coupling (SOC). Experimental signatures traditionally associated with spin polarisation, like X-ray magnetic circular dichroism (XMCD), are thus being used as a validation of altermagnetism. However, unlike altermagnetic spin-splitting, these responses require SOC and are not invariant under spin-space rotations. This brings into question the extent to which they can be considered direct signatures of altermagnetism. Here, we exploit the g-wave altermagnet $\alpha$-Fe$_{2}$O$_{3}$ to demonstrate that XMCD is governed precisely by the spin-direction-induced symmetry breaking that altermagnetic spin groups are designed to ignore. Strikingly, the XMCD is highly anisotropic and is decoupled from the weak magnetic canting. We show that this anomalous XMCD can be described by on-site Faraday tensors capturing the locally uncompensated spin-orbital anisotropies - a scenario that can be applied to other altermagnets. Leveraging this, we reconstruct complete vectorial maps of nanoscale textures in $\alpha$-Fe$_{2}$O$_{3}$ thin films, including domain walls and topological solitons, which are promising for building future spintronics and magnonics devices.

cond-mat.mtrl-sci

Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains

Topological insulators and skyrmion-hosting, chiral magnetic multilayers are two well-explored areas of modern condensed matter physics, each offering unique advantages for spintronics applications. In this paper, we demonstrate the optimization process for the growth of a Bi$_2$Se$_3$/buffer/[Pt/CoB/Ru]$_{\times N}$ heterostructure that combines these two material classes: the Bi$_2$Se$_3$ epilayer was grown by molecular beam epitaxy before transfer under ultrahigh vacuum to a separate growth chamber where the polycrystalline metallic multilayer was sputter deposited. The structure of the samples was characterized by co-fitted X-ray and polarized neutron reflectometry measurements and scanning transmission electron microscopy. Polarized neutron models and standard magnetometry show that a buffer layer exceeding a critical thickness is required to obtain the desired uniform, perpendicular magnetic anisotropy in every magnetic layer in the multilayer. Samples with both Ta and Mo buffers were used requiring thicknesses of 1.5 and 0.9 nm respectively. In minimizing the Bi$_2$Se$_3$ terracing, buffered samples yield well-defined, out-of-plane, magnetic domains suitable for spin-orbit torque induced manipulation as determined by X-ray photoemission electron microscopy.

cond-mat.mtrl-sci

Magnetic behavior and phase diagram of epitaxial Er3Fe5O12 thin films across the compensation temperature

Rare-earth iron garnet (RE3Fe5O12) films are promising insulating ferrimagnets. They can show low magnetic damping, perpendicular magnetic anisotropy, and ultrafast spin dynamics, which makes them ideal for spin transport applications. In this work, we investigate the interaction between the magnetic sublattices in Er3Fe5O12 thin films grown by pulsed laser deposition on a Gd3Ga5O12 substrate. Structural and magnetic characterization reveals high-quality single-crystal growth, with compensation temperature close to the reported bulk value (~80 K). Magnetic phase diagrams based on element-specific measurements map out the regions where ferrimagnetic, canted, and aligned phases are stable across the compensation temperature. The micromagnetic dynamics resulting from perpendicular magnetic pulse perturbation of an in-plane magnetized layer was investigated at room temperature and reveals complex configurations. These results are a key feature for modulating magnetization dynamics through the compensation phenomenon, which is essential for spin-based devices operating in a low-temperature regime.

cond-mat.mtrl-sci

Identifying Switching of Antiferromagnets by Spin-Orbit Torques

Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization (N\'eel vector) driven by current pulses remains a challenge. In an exemplary study of the collinear antiferromagnetic compound Mn$_2$Au, we demonstrate that slower thermomagnetoelastic effects predominantly govern switching over a wide parameter range. In the regime of short current pulses in the nanosecond range, however, we observe fully N\'eel spin-orbit torque driven switching. We show that this ultrafast mechanism enables the complete directional alignment of the N\'eel vector by current pulses in device structures.

physics.app-ph

RingSim- An Agent-based Approach for Modelling Mesoscopic Magnetic Nanowire Networks

We describe 'RingSim', a phenomenological agent-based model that allows numerical simulation of magnetic nanowire networks with areas of hundreds of micrometers squared for durations of hundreds of seconds; a practical impossibility for general-purpose micromagnetic simulation tools. In RingSim, domain walls (DWs) are instanced as mobile agents which respond to external magnetic fields, and their stochastic interactions with pinning sites and other DWs are described via simple phenomenological rules. We first present a detailed description of the model and its algorithmic implementation for simulating the behaviours of arrays of interconnected ring-shaped nanowires, which have previously been proposed as hardware platforms for unconventional computing applications. The model is then validated against a series of experimental measurements of an array's static and dynamic responses to rotating magnetic fields. The robust agreement between the modelled and experimental data demonstrates that agent-based modelling is a powerful tool for exploring mesoscale magnetic devices, enabling time scales and device sizes that are inaccessible to more conventional magnetic simulation techniques.

cond-mat.mes-hall

Phase Coexistence and Transitions between Antiferromagnetic and Ferromagnetic States in a Synthetic Antiferromagnet

In synthetic antiferromagnets (SAFs) the combination of antiferromagnetic order and synthesis using conventional sputtering techniques is combined to produce systems that are advantageous for spintronics applications. Here we present the preparation and study of SAF multilayers possessing both perpendicular magnetic anisotropy and the Dzyaloshinskii-Moriya interaction. The multilayers have an antiferromagnetically (AF) aligned ground state but can be forced into a full ferromagnetic (FM) alignment by applying an out-of-plane field $\sim 100$~mT. We study the spin textures in these multilayers in their ground state as well as around the transition point between the AF and FM states, at fields $\sim 40$~mT, by imaging the spin textures using complementary methods: photo-emission electron, magnetic force, and Lorentz transmission electron microscopies. The transformation into a FM state by field proceeds by a nucleation and growth process, where first skyrmionic nuclei form, which broaden into regions containing a FM-aligned labyrinth pattern that eventually occupies the whole film. This process remarkably occurs without any significant change in the net magnetic moment of the multilayer. The mix of AF- and FM-aligned regions on the micron scale in the middle of this transition is reminiscent of a first-order phase transition that exhibits phase coexistence. These results are important for guiding the design of spintronic devices using chiral magnetic textures made from SAFs.

cond-mat.mes-hall

Mott resistive switching initiated by topological defects

Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic nuclei out of the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the early-stages of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator transition coupled to a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metal phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects of the lattice order parameter of the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate topological defects and achieve the full control of the electronic Mott switching. The concept of topology-driven reversible electronic transition is of interest for a broad class of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals, that exhibit first-order electronic transitions coupled to a symmetry-breaking order.

cond-mat.str-el

Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices

Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clamping and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices.

cond-mat.mtrl-sci

Ultrafast X-ray imaging of the light-induced phase transition in VO2

Using light to control transient phases in quantum materials is an emerging route to engineer new properties and functionality, with both thermal and non-thermal phases observed out of equilibrium. Transient phases are expected to be heterogeneous, either through photo-generated domain growth or by generating topological defects, and this impacts the dynamics of the system. However, this nanoscale heterogeneity has not been directly observed. Here we use time- and spectrally resolved coherent X-ray imaging to track the prototypical light induced insulator-to-metal phase transition in vanadium dioxide on the nanoscale with femtosecond time resolution. We show that the early-time dynamics are independent of the initial spatial heterogeneity and observe a 200 fs switch to the metallic phase. A heterogeneous response emerges only after hundreds of picoseconds. Through spectroscopic imaging, we reveal that the transient metallic phase is a highly orthorhombically strained rutile metallic phase, an interpretation that is in contrast to those based on spatially averaged probes. Our results demonstrate the critical importance of spatially and spectrally resolved measurements for understanding and interpreting the transient phases of quantum materials.

cond-mat.str-el

Identifiying the domain wall spin structure in current-induced switching of antiferromagnetic NiO/Pt

The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical current pulses. The generated domains are T-domains, separated from each other by a domain wall whose spins are pointing toward the average direction of the two T-domains rather than the common axis of the two planes. Interestingly, this direction is the same for the whole circular domain indicating the absence of strong Lifshitz invariants. The domain wall can be micromagnetically modeled by strain distributions in the NiO thin film induced by the MgO substrate, deviating from the bulk anisotropy. From our measurements we determine the domain wall width to have a full width at half maximum of $Δ= 98 \pm 10$ nm, demonstrating strong confinement.

cond-mat.mtrl-sci

Nanoscale self-organisation and metastable non-thermal metallicity in Mott insulators

Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation. Here, we combine time-resolved X-ray microscopy with a Landau-Ginzburg functional approach for calculating the strain and electronic real-space configurations. We investigate V$_2$O$_3$, the archetypal Mott insulator in which nanoscale self-organization already exists in the low-temperature monoclinic phase and strongly affects the transition towards the high-temperature corundum metallic phase. Our joint experimental-theoretical approach uncovers a remarkable out-of-equilibrium phenomenon: the photo-induced stabilisation of the long sought monoclinic metal phase, which is absent at equilibrium and in homogeneous materials, but emerges as a metastable state solely when light excitation is combined with the underlying nanotexture of the monoclinic lattice.

cond-mat.str-el

Defect-driven antiferromagnetic domain walls in CuMnAs films

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

cond-mat.mtrl-sci

Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.

cond-mat.mtrl-sci

Ultrafast time-evolution of chiral Néel magnetic domain walls probed by circular dichroism in x-ray resonant magnetic scattering

Non-collinear spin textures in ferromagnetic ultrathin films are attracting a renewed interest fueled by possible fine engineering of several magnetic interactions, notably the interfacial Dzyaloshinskii-Moriya interaction. This allows the stabilization of complex chiral spin textures such as chiral magnetic domain walls (DWs), spin spirals, and magnetic skyrmions. We report here on the ultrafast behavior of chiral DWs after optical pumping in perpendicularly magnetized asymmetric multilayers, probed using time-resolved circular dichroism in x-ray resonant magnetic scattering (CD-XRMS). We observe a picosecond transient reduction of the CD-XRMS, which is attributed to the spin current-induced coherent and incoherent torques within the continuously dependent spin texture of the DWs. We argue that a specific demagnetization of the inner structure of the DW induces a flow of hot spins from the interior of the neighboring magnetic domains. We identify this time-varying change of the DW textures shortly after the laser pulse as a distortion of the homochiral N'eel shape toward a transient mixed Bloch-Néel-Bloch textures along a direction transverse to the DW. Our study highlights how time-resolved CD-XRMS can be a unique tool for studying the time evolution in other systems showing a non-collinear electric/magnetic ordering such as skyrmion lattices, conical/helical phases, as well as the recently observed antiskyrmion lattices, in metallic or insulating materials.

cond-mat.mtrl-sci

Atomically sharp domain walls in an antiferromagnet

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets.

cond-mat.mtrl-sci

An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit

We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 μm, and magnetic domain governed decay lengths of 175 nm for the low frequency magnons, through electrical transport measurements demonstrating that the introduction of non-magnetic dopants does not strongly reduce the transport length scale showing that the magnetic damping of hematite is not significantly increased. We observe a complex field dependence of the non-local signal independent of the magnetic state visible in the local magnetoresistance and direct magnetic imaging of the antiferromagnetic domain structure. We explain our results in terms of a varying and applied-field-dependent ellipticity of the magnon modes reaching the detector electrode allowing us to tune the spin transport.

cond-mat.mes-hall

Antiferromagnetic Half-skyrmions and Bimerons at room temperature

In the quest for post-CMOS technologies, ferromagnetic skyrmions and their anti-particles have shown great promise as topologically protected solitonic information carriers in memory-in-logic or neuromorphic devices. However, the presence of dipolar fields in ferromagnets, restricting the formation of ultra-small topological textures, and the deleterious skyrmion Hall effect when driven by spin torques have thus far inhibited their practical implementations. Antiferromagnetic analogues, which are predicted to demonstrate relativistic dynamics, fast deflection-free motion and size scaling have recently come into intense focus, but their experimental realizations in natural antiferromagnetic systems are yet to emerge. Here, we demonstrate a family of topological antiferromagnetic spin-textures in $α$-Fe$_2$O$_3$ - an earth-abundant oxide insulator - capped with a Pt over-layer. By exploiting a first-order analogue of the Kibble-Zurek mechanism, we stabilize exotic merons-antimerons (half-skyrmions), and bimerons, which can be erased by magnetic fields and re-generated by temperature cycling. These structures have characteristic sizes of the order ~100 nm that can be chemically controlled via precise tuning of the exchange and anisotropy, with pathways to further scaling. Driven by current-based spin torques from the heavy-metal over-layer, some of these AFM textures could emerge as prime candidates for low-energy antiferromagnetic spintronics at room temperature.

cond-mat.mtrl-sci

Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance

TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state. Here we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition and the detection of the SRT in TFO thin films can be accessed by making use of the all electrical spin Hall magnetoresistance (SMR), in good agreement for the temperature range where the SRT occurs. Our results demonstrate that one can electrically detect the SRT in insulators.

cond-mat.mtrl-sci