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Francesco Petocchi

Publications and source records attributed to Francesco Petocchi.

31 records · Page 2Linked to original sources

Photo-induced charge dynamics in 1$T$-TaS$_2$

Recent theoretical studies showed that the electronic structure of 1$T$-TaS$_2$ in the low-temperature commensurate charge density wave phase exhibits a nontrivial interplay between band-insulating and Mott insulating behavior. This has important implications for the interpretation of photo-doping experiments. Here we use nonequilibrium dynamical mean-field theory simulations of a realistic multi-layer structure to clarify the charge carrier dynamics induced by a laser pulse. The solution is propagated up to the picosecond timescale by employing a memory-truncation scheme. While long-lived doublons and holons only exist in the surface state of a specific structure, the disturbance of bonding states in the bilayers which make up the bulk of the system explain the almost instantaneous appearance of in-gap states. Our simulations consistently explain the coexistence of a doublon feature with a prominent ``background" signal in previous time-resolved photoemission experiments, and they suggest strategies for the selective population of the ingap and doublon states by exploiting the sensitivity to the pump polarization and pump frequency.

cond-mat.str-el↗

Time-resolved photoemission and RIXS study of a site-selective Mott insulator

Inspired by the physics of rare earth nickelates, we study the photoemission (PES) and resonant inelastic X-ray scattering (RIXS) spectra of a correlated electron system with two types of insulating sublattices. Sublattice A is characterized by a hybridization gap and a low-spin state, while sublattice B features a Mott gap and a local magnetic moment. We show how the coupling of these two qualitatively different insulating states affects the dynamics of photo-induced charge carriers and how the nonequilibrium states manifest themselves in the PES and RIXS signals. In particular, we find that charge carriers created on the B sublattice migrate to the A sublattice, where they contribute to the creation of in-gap states in the PES signal, and to characteristic peaks in the nonequilibrium RIXS spectrum. While the contributions from the two sublattices cannot be easily distinguished in the local photoemission spectrum, the weights of the RIXS signals in the two-dimensional $ω_\text{in}$-$ω_\text{out}$ space provide information on the local state evolution on both sublattices.

cond-mat.str-el↗

$GW$+EDMFT investigation of Pr$_{1-x}$Sr$_x$NiO$_2$ under pressure

Motivated by the recent experimental observation of a large pressure effect on $T_c$ in Pr$_{1-x}$Sr$_x$NiO$_2$, we study the electronic properties of this compound as a function of pressure for $x=0$ and $0.2$ doping using self-consistent $GW$+EDMFT. Our numerical results demonstrate a non-trivial interplay between chemical doping and physical pressure, and small but systematic changes in the orbital occupations, local level energies, and interaction parameters with increasing pressure. The proper treatment of correlation effects, beyond density function theory, is shown to play an important role in revealing these trends. While the pressure dependent changes in the electronic structure of the undoped compound suggest a more single-band-like behavior in the high-pressure regime, a qualitatively different behavior is found in the doped system. We also point out that the fluctuations in the orbital occupations and spin states are not consistent with a single-band picture, and that at least a two-band model is necessary to reproduce the full result. This multi-orbital nature manifests itself most clearly in the doped compound.

cond-mat.str-el↗

Modified interlayer stacking and insulator to correlated-metal transition driven by uniaxial strain in 1$T$-TaS$_{2}$

Interlayer coupling is strongly implicated in the complex electronic properties of 1$T$-TaS$_2$ , but the interplay between this and electronic correlations remains unresolved. Here, we employ angle-resolved photoemission spectroscopy (ARPES) to reveal the effect of uniaxial strain engineering on the electronic structure and interlayer coupling in 1$T$-TaS$_2$ . The normally insulating ground state is transformed into a correlated-metal phase under strain, as evidenced by the emergence of a narrow band at the Fermi level. Temperature dependent ARPES measurements reveal that the metallic behaviour only develops below the commensurate charge density wave (CCDW) transition, where interlayer dimerization produces a band-insulator in unstrained samples. Electronic structure calculations demonstrate that the correlated metallic behaviour is stabilized by a previously predicted but unobserved bulk stacking structure with a modified interlayer coupling of the Ta d$_{z^{2}}$ electrons. Our combined approach lays bare the role of correlations and interlayer coupling in 1$T$-TaS$_2$ , providing critical input for understanding superconductivity under pressure and the metastable hidden phase induced using non-equilibrium protocols in this platform material for correlated physics.

cond-mat.str-el↗

Mott versus hybridization gap in the low-temperature phase of $1T$-TaS$_2$

We compute the correlated electronic structure of stacked $1T$-TaS$_2$ bilayers using the $GW$ + EDMFT method. Depending on the surface termination, the semi-infinite uncorrelated system is either band-insulating or exhibits a metallic surface state. For realistic values of the onsite and intersite interactions, a Mott gap opens in the surface state, but this gap is smaller than the gap originating from the bilayer structure. Our results are consistent with recent scanning tunneling spectroscopy measurements for different terminating layers, and with our own photoemission measurements, which indicate the coexistence of spatial regions with different gaps in the electronic spectrum.

cond-mat.str-el↗

Superconductivity in black phosphorus and the role of dynamical screening

Simple cubic phosphorus exhibits superconductivity with a maximum $T_c$ of up to 12 K under pressure. The pressure dependence of $T_c$ cannot be consistently explained with a simple electron-phonon mechanism, which has stimulated investigations into the role of electronic correlations and plasmonic contributions. Here, we solve the gap equation of density functional theory for superconductors using different electron-electron and electron-phonon contributions to the kernel. We find that the phonon contribution alone yields an overestimation of $T_c$, while the addition of the static electronic contribution results in an underestimation. Taking into account the full frequency dependence of the screened interaction, the one-shot $GW$ approximation predicts $T_c$ values in good agreement with the experiments in the pressure range appropriate for the cubic phase. We also explore the use of quasi-particle bands in the calculation of the electronic and phononic kernels, and show that this modification significantly improves $T_c$ in the high-pressure region.

cond-mat.supr-con↗

Causal versus local $GW$+EDMFT scheme and application to the triangular-lattice extended Hubbard model

Using the triangular-lattice extended Hubbard model as a test system, we compare $GW$+EDMFT results for the recently proposed self-consistency scheme with causal auxiliary fields to those obtained from the standard implementation which identifies the impurity Green's functions with the corresponding local lattice Green's functions. Both for short-ranged and long-ranged interactions we find similar results, but the causal scheme yields slightly stronger correlation effects at half-filling. We use the two implementations of $GW$+EDMFT to compute spectral functions and dynamically screened interactions in the parameter regime relevant for 1$T$-TaS$_2$. We address the question whether or not the sample used in a recent photoemission study [Phys. Rev. Lett. 120, 166401 (2018)] was half-filled or hole-doped.

cond-mat.str-el↗

Fully {\it ab-initio} electronic structure of Ca$_{2}$RuO$_{4}$

The reliable {\it ab-initio} description of strongly correlated materials is a long-sought capability in condensed matter physics. The $GW$+EDMFT method is a promising scheme, which provides a self-consistent description of correlations and screening, and does not require user-provided parameters. In order to test the reliability of this approach we apply it to the experimentally well characterized perovskite compound Ca$_2$RuO$_4$, in which a temperature-dependent structural deformation drives a paramagnetic metal-insulator transition. Our results demonstrate that the nonlocal polarization and self-energy components introduced by $GW$ are essential for setting the correct balance between interactions and bandwidths, and that the $GW$+EDMFT scheme produces remarkably accurate predictions of the electronic properties of this strongly correlated material.

cond-mat.str-el↗

Normal state of Nd$_{1-x}$Sr$_x$NiO$_2$ from self-consistent $GW$+EDMFT

The recent discovery of superconductivity in hole-doped NdNiO$_2$ thin films has captivated the condensed matter physics community. Such compounds with a formal Ni$^+$ valence have been theoretically proposed as possible analogues of the cuprates, and the exploration of their electronic structure and pairing mechanism may provide important insights into the phenomenon of unconventional superconductivity. At the modeling level, there are however fundamental issues that need to be resolved. While it is generally agreed that the low-energy properties of cuprates can to a large extent be captured by a single-band model, there has been a controversy in the recent literature about the importance of a multi-band description of the nickelates. The origin of this controversy is that studies based entirely on density functional theory (DFT) calculations miss important correlation and multi-orbital effects induced by Hund coupling, while model calculations or simulations based on the combination of DFT and (extended) dynamical mean field theory ((E)DMFT) involve ad-hoc parameters and double counting corrections that substantially affect the results. Here we use a multi-site extension of the recently developed $GW$+EDMFT method, which is free of adjustable parameters, to self-consistently compute the interaction parameters and electronic structure of hole-doped NdNiO$_2$. This full ab-initio simulation demonstrates the importance of a multi-orbital description, even for the undoped compound, and produces results for the resistivity and Hall conductance in qualitative agreement with experiment.

cond-mat.str-el↗

Screening from $e_g$ states and antiferromagnetic correlations in $d^{(1,2,3)}$ perovskites: A $GW$+EDMFT investigation

We perform a systematic {\it ab initio} study of the electronic structure of Sr(V,Mo,Mn)O$_3$ perovskites, using the parameter-free $GW$+EDMFT method. This approach self-consistently calculates effective interaction parameters, taking into account screening effects due to nonlocal charge fluctuations. Comparing the results of a 3-band ($t_{2g}$) description to those of a 5-band ($t_{2g}$+$e_g$) model, it is shown that the $e_g$ states have little effect on the low-energy properties and the plasmonic features for the first two compounds but play a more active role in SrMnO$_3$. In the case of SrMnO$_3$ paramagnetic $GW$+EDMFT yields a metallic low-temperature solution on the verge of a Mott transition, while antiferromagnetic $GW$+EDMFT produces an insulating solution with the correct gap size. We discuss the possible implications of this result for the nature of the insulating state above the Néel temperature, and the reliability of the $GW$+EDMFT scheme.

cond-mat.str-el↗

Hund excitations and the efficiency of Mott solar cells

We study the dynamics of photo-induced charge carriers in realistic models of LaVO3 and YTiO3 polar heterostructures. It is shown that two types of impact ionization processes contribute to the carrier multiplication in these strongly correlated multi-orbital systems: The first mechanism involves local spin state transitions, while the second mechanism involves the scattering of high kinetic energy carriers. Both processes act on the 10 fs timescale and play an important role in the harvesting of high energy photons in solar cell applications. As a consequence, the optimal gap size for Mott solar cells is substantially smaller than for semiconductor devices.

cond-mat.str-el↗

Embedding Dynamical Mean-Field Theory for Superconductivity in Layered Materials and Heterostructures

We study layered systems and heterostructures of s-wave superconductors by means of a suitable generalization of Dynamical Mean-Field Theory. In order to reduce the computational effort, we consider an embedding scheme in which a relatively small number of active layers is embedded in an effective potential accounting for the effect of the rest of the system. We introduce a feedback of the active layers on the embedding potential that improves on previous approaches and essentially eliminates the effects of the finiteness of the active slab allowing for cheap computation of very large systems. We extend the method to the superconducting state, and we benchmark the approach by means of simple paradigmatic examples showing some examples on how an interface affects the superconducting properties. As examples, we show that superconductivity can penetrate from an intermediate coupling superconductor into a weaker coupling one for around ten layers, and that the first two layers of a system with repulsive interaction can turn superconducting by proximity effects even when charge redistribution is inhibited.

cond-mat.str-el↗

Rientrant metallicity in the Hubbard model: the case of honeycomb nanoribbons

Based on the Cluster Perturbation solution of the Hubbard hamiltonian for a 2-D honeycomb lattice we present quasiparticle band structures of nanoribbons at half filling as a function of the on-site electron-electron repulsion. We show that at moderate values of e-e interaction ribbons with armachair shaped edges exhibit an unexpected semimetallic behavior, recovering the original insulating character only at larger values of $U$.

cond-mat.str-el↗