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Francisco A. G. de Lira

Publications and source records attributed to Francisco A. G. de Lira.

3 recordsLinked to original sources

Magnetoresistance and electric current oscillations induced by geometry in a two-dimensional quantum ring

In this work, we investigate the effects of a controlled conical geometry on the electric charge transport through a two-dimensional quantum ring weakly coupled to both the emitter and the collector. These mesoscopic systems are known for being able to confine highly mobile electrons in a defined region of matter. In particular, we consider a GaAs device having an average radius of $800\hspace{0.05cm}\text{nm}$ in different regimes of subband occupation at non-zero temperature and under the influence of a weak and uniform background magnetic field. Using the adapted Landauer formula for the resonant tunneling and the energy eigenvalues, we explore how the modified surface affects the Van-Hove conductance singularities, the magnetoresistance interference patterns resulting from the Aharonov-Bohm oscillations of different frequencies and the charge transport when an electric potential is applied in the terminals of the device. Magnetoresistance and charge current oscillations depending only on the curvature intensity are reported, providing a new feature that represents an alternative way to optimize the transport through the device by tuning its geometry.

cond-mat.mes-hall↗

Study on the effects of anisotropic effective mass on electronic properties, magnetization and persistent current in semiconductor quantum ring with conical geometry

We study a 2D mesoscopic ring with an anisotropic effective mass considering surface quantum confinement effects. Consider that the ring is defined on the surface of a cone, which can be controlled topologically and mapped to the 2D ring in flat space. We demonstrate through numerical analysis that the electronic properties, the magnetization, and the persistent current undergo significant changes due to quantum confinement and non-isotropic mass. We investigate these changes in the direct band gap semiconductors SiC, ZnO, GaN, and AlN. There is a plus (or minus) shift in the energy sub-bands for different values of curvature parameter and anisotropy. Manifestations of this nature are also seen in the Fermi energy profile as a function of the magnetic field and in the ring width as a function of the curvature parameter. Aharonov-Bohm (AB) and de Haas van-Alphen (dHvA) oscillations are also studied, and we find that they are sensitive to variations in curvature and anisotropy.

cond-mat.mes-hall↗