arXiv subjects

Francisco Pasadas

Publications and source records attributed to Francisco Pasadas.

20 records · Page 2Linked to original sources

arXiv2016

Large-Signal Model of Graphene Field-Effect Transistors -- Part I: Compact Modeling of GFET Intrinsic Capacitances

We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the DC, transient behavior, and frequency response of the circuit. The drain current model is based in a drift-diffusion mechanism for the carrier transport coupled with an appropriate field-effect approach. The intrinsic capacitance model consists of a 16-capacitance matrix including self-capacitances and transcapacitances of a four-terminal GFET. To guarantee charge conservation, a Ward-Dutton linear charge partition scheme has been used. The large-signal model has been implemented in Verilog-A, being compatible with conventional circuit simulators and serving as a starting point toward the complete GFET device model that could incorporate additional non-idealities.

cond-mat.mes-hall↗

arXiv2015

Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment

Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge and capacitance. In this work we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been included considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.

cond-mat.mes-hall↗