arXiv subjects

Franck Balestro

Publications and source records attributed to Franck Balestro.

17 recordsLinked to original sources

arXiv2026

Multiplexed cryo-CMOS control of an isolated double quantum dot

Scalable spin-based quantum computing demands precise and stable control of a large number of gate-defined quantum dots while minimizing wiring complexity and thermal load. Control architectures based on sample-and-hold (SH) multiplexing techniques offer a promising solution by enabling sequential programming of several gate voltages using a limited number of input lines. However, the compatibility of such dynamic voltage refreshing with the stringent stability, noise, and speed requirements of quantum dot operation is an active subject of study. Here we experimentally demonstrate that a multiplexing cryo-CMOS circuit can reliably bias a silicon double quantum dot (DQD) at 0.5K. Exploiting the isolated regime, we show deterministic loading and isolation of four electrons and stable access to all five charge configurations from (4,0) to (0,4), despite the sequential voltage refreshing. We further demonstrate rapid voltage pulsing across an inter-dot transition, resolving single-electron tunneling events and stochastic switching at the (1,3)-(0,4) transition. These results confirm that SH-based multiplexed control is compatible with both static biasing and pulsing of isolated quantum dots, representing an important milestone toward scalable cryogenic control architectures for large-scale spin-qubit processors.

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arXiv2025

A foundry-fabricated spin qubit unit cell with in-situ dispersive readout

Spin qubits based on semiconductor quantum dots are a promising prospect for quantum computation because of their high coherence times and gate fidelities. However, scaling up those structures to the numbers required by fault-tolerant quantum computing is currently hampered by a number of issues. One of the main issues is the need for single-shot low-footprint qubit readout. Here, we demonstrate the single-shot in situ measurement of a compact qubit unit-cell. The unit cell is composed of two electron spins with a controllable exchange interaction. We report initialization, single-shot readout and two-electron entangling gate. The unit cell was successfully operated at up to 1 K, with state-of-the-art charge noise levels extracted using free induction decay. With its integrated readout and high stability, this foundry fabricated qubit unit cell demonstrates strong potential for scalable quantum computing architectures.

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arXiv2024

Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays

Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore, to scale-up a spin-based architecture we must change how individual charges are readout and controlled. Here, we demonstrate single-spin occupancy of each dot in a foundry-fabricated array by combining two methods. 1/ Loading a finite number of electrons into the quantum dot array; simplifying electrostatic tuning by isolating the array from the reservoirs. 2/ Deploying multiplex gate-based reflectometry to dispersively probe charge tunneling and spin states without charge sensors or reservoirs. Our isolated arrays probed by embedded multiplex readout can be readily electrostatically tuned. They are thus a viable, scalable approach for spin-based quantum architectures.

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arXiv2022

Probing charge noise in few electron CMOS quantum dots

Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension. Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime. We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot.

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arXiv2022

Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K

We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~\mu$s and $99\%$ for $4~\mu$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keeping the same spin state with $a \approx 95.6\%$ fidelity.

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arXiv2021

Spin-valley coupling anisotropy and noise in CMOS quantum dots

One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6GHz/\sqrt{Hz}$.

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arXiv2020

Charge detection in an array of CMOS quantum dots

The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.

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arXiv2018

Generalized Ramsey Interferometry Explored with a Single Nuclear Spin Qudit

Qudits, with their state space of dimension d > 2, open fascinating experimental prospects. The quantum properties of their states provide new potentialities for quantum information, quantum contextuality, expressions of geometric phases, facets of quantum entanglement and many other foundational aspects of the quantum world, which are unapproachable with qubits. We here experimentally investigate the quantum dynamics of a qudit (d = 4) that consists of a single 3/2 nuclear spin embedded in a molecular magnet transistor geometry, coherently driven by a microwave electric field. We propose and implement three protocols based on a generalization of the Ramsey interferometry to a multilevel system. First, the standard Ramsey interference is used to measure the accumulation of geometric phases. Then, two distinct transitions of the nuclear spin are addressed to measure the phase of an iSWAP quantum gate. Finally, through a succession of two Hadamard gates, the coherence time of a 3-state superposition is measured.

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arXiv2017

Operating Quantum States in Single Magnetic Molecules: Implementation of Grover's Quantum Algorithm

Quantum algorithms use the principles of quantum mechanics, as for example quantum superposition, in order to solve particular problems outperforming standard computation. They are developed for cryptography, searching, optimisation, simulation and solving large systems of linear equations. Here, we implement Grover's quantum algorithm, proposed to find an element in an unsorted list, using a single nuclear 3/2-spin carried by a Single Molecular Magnet (SMM) transistor. The coherent manipulation of this multi-level qudit is achieved by means of electric fields only. Grover's search algorithm was implemented by constructing a quantum database via a multi-level Hadamard gate. The Grover sequence then allows us to select each state. The presented method is of universal character and can be implemented in any multi-level quantum system with non-equal spaced energy levels, opening the way to novel quantum search algorithms.

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arXiv2017

Molecular Spin Qudits for Quantum Algorithms

Presently, one of the most ambitious technological goals is the development of devices working under the laws of quantum mechanics. One prominent target is the quantum computer, which would allow the processing of information at quantum level for purposes not achievable with even the most powerful computer resources. The large-scale implementation of quantum information would be a game changer for current technology, because it would allow unprecedented parallelised computation and secure encryption based on the principles of quantum superposition and entanglement. Currently, there are several physical platforms racing to achieve the level of performance required for the quantum hardware to step into the realm of practical quantum information applications. Several materials have been proposed to fulfil this task, ranging from quantum dots, Bose-Einstein condensates, spin impurities, superconducting circuits, molecules, amongst others. Magnetic molecules are among the list of promising building blocks, due to (i) their intrinsic monodispersity, (ii) discrete energy levels (iii) the possibility of chemical quantum state engineering, and (iv) their multilevel characteristics, leading to the so called Qudits (d > 2), amongst others. Herein we review how a molecular multilevel nuclear spin qubit (or qudit, where d = 4), known as TbPc2, gathers all the necessary requirements to perform as a molecular hardware platform with a first generation of molecular devices enabling even quantum algorithm operations.

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arXiv2017

Electrical single spin read-out using an exchange-coupled quantum dot

We present a new way of continuously reading-out the state of a single electronic spin. Our detection scheme is based on an exchange interaction between the electronic spin and a nearby read-out quantum dot. The coupling between the two systems results in a spin-dependent conductance through the read-out dot and establishes an all electrical and non-destructive single spin detection. With conductance variations up to 4% and read-out fidelities greater than 99.5%, this method represents an alternative to systems where spin to charge conversion cannot be implemented. Using a semi-classical approach, we present an asymetric exchange coupling model in good agreement with our experimental results.

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arXiv2011

Universal transport signatures in two-electron molecular quantum dots: gate-tunable Hund's rule, underscreened Kondo effect and quantum phase transitions

We review here some universal aspects of the physics of two-electron molecular transistors in the absence of strong spin-orbit effects. Several recent quantum dots experiments have shown that an electrostatic backgate could be used to control the energy dispersion of magnetic levels. We discuss how the generically asymmetric coupling of the metallic contacts to two different molecular orbitals can indeed lead to a gate-tunable Hund's rule in the presence of singlet and triplet states in the quantum dot. For gate voltages such that the singlet constitutes the (non-magnetic) ground state, one generally observes a suppression of low voltage transport, which can yet be restored in the form of enhanced cotunneling features at finite bias. More interestingly, when the gate voltage is controlled to obtain the triplet configuration, spin S=1 Kondo anomalies appear at zero-bias, with non-Fermi liquid features related to the underscreening of a spin larger than 1/2. Finally, the small bare singlet-triplet splitting in our device allows to fine-tune with the gate between these two magnetic configurations, leading to an unscreening quantum phase transition. This transition occurs between the non-magnetic singlet phase, where a two-stage Kondo effect occurs, and the triplet phase, where the partially compensated (underscreened) moment is akin to a magnetically "ordered" state. These observations are put theoretically into a consistent global picture by using new Numerical Renormalization Group simulations, taylored to capture sharp finie-voltage cotunneling features within the Coulomb diamonds, together with complementary out-of-equilibrium diagrammatic calculations on the two-orbital Anderson model. This work should shed further light on the complicated puzzle still raised by multi-orbital extensions of the classic Kondo problem.

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arXiv2011

Cotunneling through a magnetic single-molecule transistor based on N\atC60

We present an experimental and theoretical study of a magnetic single-molecule transistor based on N@C60 connected to gold electrodes. Particular attention is paid to the regime of intermediate molecule-lead coupling, where cotunneling effects manifest themselves in the Coulomb-blockade regime. The experimental results for the differential conductance as a function of bias, gate voltage, and external magnetic field are in agreement with our analysis of the tunneling rates and provide evidence of magnetic signatures in single-N@C60 devices arising from an antiferromagnetic exchange interaction between the C60 spin and the nitrogen spin.

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arXiv2009

Observation of the underscreened Kondo effect in a molecular transistor

We present the first quantitative experimental evidence for the underscreened Kondo effect, an uncomplete compensation of a quantized magnetic moment by conduction electrons, as originally proposed by Nozieres and Blandin. The device consists of an even charge spin S = 1 molecular quantum dot, obtained by electromigration of C60 molecules into gold nanogaps and operated in a dilution fridge. The persistence of logarithmic singularities in the low temperature conductance is demonstrated by a comparison to the fully screened configuration obtained in odd charge spin S = 1/2 Coulomb diamonds. We also discover an extreme sensitivity of the underscreened Kondo resonance to magnetic field, that we confirm on the basis of numerical renormalization group calculations.

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arXiv2008

Supplementary Information: Quantum phase transition in a single-molecule quantum dot

Quantum criticality is the intriguing possibility offered by the laws of quantum mechanics when the wave function of a many-particle physical system is forced to evolve continuously between two distinct, competing ground states. This phenomenon, often related to a zero-temperature magnetic phase transition, can be observed in several strongly correlated materials such as heavy fermion compounds or possibly high-temperature superconductors, and is believed to govern many of their fascinating, yet still unexplained properties. In contrast to these bulk materials with very complex electronic structure, artificial nanoscale devices could offer a new and simpler vista to the comprehension of quantum phase transitions. This long-sought possibility is demonstrated by our work in a fullerene molecular junction, where gate voltage induces a crossing of singlet and triplet spin states at zero magnetic field. Electronic tunneling from metallic contacts into the $\rm{C_{60}}$ quantum dot provides here the necessary many-body correlations to observe a true quantum critical behavior.

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arXiv2008

Quantum phase transition in a single-molecule quantum dot

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arXiv2008

Out-of-equilibrium singlet-triplet Kondo effect in a single C_60 quantum dot

We have used an electromigration technique to fabricate a $\rm{C_{60}}$ single-molecule transistor (SMT). Besides describing our electromigration procedure, we focus and present an experimental study of a single molecule quantum dot containing an even number of electrons, revealing, for two different samples, a clear out-of-equilibrium Kondo effect. Low temperature magneto-transport studies are provided, which demonstrates a Zeeman splitting of the finite bias anomaly.

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