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Francois Balembois

Publications and source records attributed to Francois Balembois.

6 recordsLinked to original sources

On thermal effects in solid state lasers: the case of ytterbium-doped materials

A review of theoretical and experimental studies of thermal effects in solid-state lasers is presented, with a special focus on diode-pumped ytterbium-doped materials. A large part of this review provides however general information applicable to any kind of solid-state laser. Our aim here is not to make a list of the techniques that have been used to minimize thermal effects, but instead to give an overview of the theoretical aspects underneath, and give a state-of-the-art of the tools at the disposal of the laser scientist to measure thermal effects. After a presentation of some general properties of Yb-doped materials, we address the issue of evaluating the temperature map in Yb-doped laser crystals, both theoretically and experimentally. This is the first step before studying the complex problem of thermal lensing (part III). We will focus on some newly discussed aspects, like the definition of the thermo-optic coefficient: we will highlight some misleading interpretations of thermal lensing experiments due to the use of the dn/dT parameter in a context where it is not relevant. Part IV will be devoted to a state-of-the-art of experimental techniques used to measure thermal lensing. Eventually, in part V, we will give some concrete examples in Yb-doped materials, where their peculiarities will be pointed out.

physics.optics

Direct and absolute temperature mapping and heat transfer measurements in diode-end-pumped Yb:YAG

We report direct and absolute temperature measurements in a diode-end-pumped Yb:YAG crystal, using a calibrated infrared camera, with a 60-$μ$m spatial resolution. The heat transfer coefficient has been measured, for the first time to our knowledge, with four different types of thermal contact (H = 0.25, 0.28, 0.9 and 2.0 for bare contact, graphite layer, indium foil and heat sink grease respectively). The dynamics of thermal effects is also presented.

physics.optics

New 3D multipass amplifier based on Nd:YAG or Nd:YVO4 crystals

We report on new simple and efficient multipass amplifiers using prisms or corner cubes to perform several passes in different planes of incidence. This scheme provides an optimized overlap between the signal passes and the pumped volume. We investigated our amplification geometry with Nd:YAG and Nd: YVO4 crystals : the use of a low doped (0.3%) Nd:YVO4 crystal allowed better thermal behaviour and higher performances. We amplified a pulsed microlaser (110 mW of average power at 1064 nm) and obtained a diffraction-limited output beam with an average power of 5.7 W for 15 W of pump power and a small-signal gain of 56 dB in a 6-pass configuration.

physics.optics

Picosecond laser source at 1 MHz with continuous tunability in the visible red band

We report the first demonstration to our knowledge of a continuously tunable picosecond laser operating around 1 MHz. The emission can be tuned from 640 to 685 nm and the repetition rate from 200 kHz to 1 MHz with a pulse duration of less than 200 ps. The system is based on a Nd:YVO4 passively Q-switched microchip laser providing a few tens of nJ per pulse. Two cascaded stages of amplification are then used to increase the pulse energy to several microJ . The frequency doubled radiation is then used to pump a periodically-poled-niobate-lithium (PPLN)-based optical parametric generator in an all-solid-state architecture. 20 nJ of tunable signal radiation are obtained. We also demonstrated 300-ps pulses generation in the UV (355 nm) at 1 MHz.

physics.optics

Passively mode-locked diode-pumped Nd:YVO4 oscillator operating at ultra-low repetition rate

We demonstrate the operation of an ultra low repetition rate, high peak power, picosecond diode pumped Nd:YVO4 passively mode locked laser oscillator. Repetition rates even below 1 MHz were achieved with the use of a new design multiple-pass cavity and a semiconductor saturable absorber. Long term stable operation at 1.2 MHz, pulse duration of 16.3 ps and average output power of 470 mW corresponding to 24 KW peak power pulses is reported. This is, to our knowledge, the lowest repetition rate high peak power pulses ever generated directly from a picosecond laser resonator without cavity dumping.

physics.optics

Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.

physics.optics