arXiv subjects

Francois Bertran

Publications and source records attributed to Francois Bertran.

16 recordsLinked to original sources

arXiv2026

Lattice Reconstruction and Orbital Hybridization Suppress Magnetism in TaCo$_2$Te$_2$

Structural reconstruction in low-dimensional quantum materials can strongly modify electronic symmetry and magnetic stability through orbital hybridization. Here, we investigate the interplay between lattice reconstruction, electronic structure, and magnetic instability in the layered van der Waals compound TaCo$_2$Te$_2$ using scanning tunneling microscopy and spectroscopy (STM/STS), non-contact atomic force microscopy (nc-AFM), angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT). While nc-AFM resolves a distorted hexagonal Te surface lattice, STM/STS reveal a pronounced square-like electronic symmetry that does not directly follow the atomic structure. ARPES further shows a strongly anisotropic Fermi surface and reconstructed low-energy states. Spatially resolved spectroscopy and orbital-projected DFT demonstrate that the bias-dependent STM contrast does not arise from a simple reversal between occupied and unoccupied states, but from the energy-integrated local density of states dominated by electronic states exhibiting opposite spatial contrast at selected energies. DFT calculations further show that reconstruction suppresses the magnetic instability present in the undistorted structure, stabilizing a nonmagnetic ground state through enhanced orbital hybridization. These results establish TaCo$_2$Te$_2$ as a model system in which lattice reconstruction reorganizes electronic symmetry and suppresses magnetism, highlighting structural reconstruction as a route for controlling correlated and magnetic phases in low-dimensional quantum materials.

cond-mat.mtrl-sci↗

arXiv2025

Trion gas on the surface of a failed excitonic insulator

Trions, three-body bound states composed of an exciton and an additional charge, are typically fragile and require external excitation to form. Here, we report the spontaneous emergence of a stable trion gas at the surface of the layered semiconductor Ta2NiS5, revealed through angle-resolved photoemission spectroscopy. We observe a sharp, highly localized in-gap feature that cannot be explained by conventional band-theory. Instead, we argue that it arises from the formation of negative trions, stabilized by surface-induced band bending and the material's quasi-one-dimensional geometry. Unlike excitons, these trions form without optical pumping and persist at equilibrium, marking a rare example of an interaction-driven surface state in a nominally conventional semiconductor. Our findings establish Ta2NiS5 as a unique platform for exploring many-body physics at surfaces and open new avenues for studying and controlling collective excitations in low-dimensional systems.

cond-mat.str-el↗

arXiv2025

Mixed Triplet-Singlet Order Parameter in Decoupled Superconducting 1H Monolayers of Transition-Metal Dichalcogenides

Understanding the emergence of unconventional superconductivity, where the order parameter deviates from simple isotropic s-wave pairing, is a central puzzle in condensed matter physics. Transition-metal dichalcogenides (TMDCs), though generally regarded as conventional superconductors, display signatures of this unusual behavior and thus provide a particularly intriguing platform to explore how exotic states arise. Here we investigate the misfit compound (SnS)$_{1.15}$(TaS$_2$), a heterostructure composed of alternating SnS and 1H-TaS$_2$ layers. Using transport, photoemission, and scanning tunneling spectroscopy, we demonstrate that the SnS layers effectively decouple the TaS$_2$ into electronically isolated 1H sheets. In this limit, the tunneling density of states reveals a clear two-gap superconducting spectrum with T$_c \sim$ 3.1 K. A theoretical model based on lack of inversion symmetry and finite-range attraction reproduces the observed multi-gap structure as a mixed singlet-triplet state. These results establish misfit compounds as a powerful platform for studying unconventional superconductivity in isolated 1H layers and for realizing multiple uncoupled superconductors within a single crystal.

cond-mat.supr-con↗

arXiv2025

Mexican hat-like valence band dispersion and quantum confinement in rhombohedral ferroelectric alpha-In2Se3

Two-dimensional (2D) ferroelectric (FE) materials offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, alpha-In2Se3 has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, in- and out-of-plane ferroelectricity and high photo-response. Precise experimental determination of the electronic structure of rhombohedral (3R) alpha-In2Se3 is needed for a better understanding of potential properties and device applications. Here, combining angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we demonstrate that 3R alpha-In2Se3 phase exhibits a robust inversion of the valence band parabolicity at the Gamma point forming a bow-shaped dispersion with a depth of 140 +- 10 meV between the valence band maximum (VBM) along the GammaK direction of the Brillouin zone (BZ). Moreover, we unveil an indirect band gap of about 1.25 eV, as well as a highly electron doping of approximatively 5.1012 electrons per cmsquare at the surface. This leads to surface band bending and the formation of a prominent electron accumulation layer. These findings allow a deeper understanding of the rhombohedral alpha-In2Se3 electronic properties underlying the potential of III/VI semiconductors for electronic and photonic technologies.

cond-mat.mtrl-sci↗

arXiv2025

Unfolding the kagome lattice to improve understanding of ARPES in CoSn

Metallic kagome lattices are attracting significant attention as they provide a platform to explore the interplay between topology and magnetism. Angle-resolved photoemission spectroscopy (ARPES) plays a key role in unraveling their electronic structure. However, the analysis is often challenging due to the presence of multiple bands near the Fermi level. Indeed, each orbital generates three bands in a kagome lattice due to its three sites motif, which soon becomes complicated if many orbitals are present. To address this complexity, using ARPES matrix elements can be highly beneficial. First, band symmetry can be determined through selection rules based on light polarization. We emphasize that, in kagome lattices, as in all multi-site lattices, symmetry of the Bloch state is not only determined by the orbital character but also by the relative phase between the three sublattices. Additionally, interference between the three sublattices leads to a strong modulation of ARPES intensity across neighboring Brillouin zones. We show how unfolded band calculations capture these modulations, helping with band identification. We apply these ideas to CoSn, whose simple structure retains the key features of a kagome lattice. Using polarization dependent ARPES in several Brillouin zones, we isolate the dispersion of each band and discuss novel correlation effects, selectively renormalizing the bands crossing the Fermi level and shifting the others.

cond-mat.str-el↗

arXiv2024

Emergence of a Bandgap in Nano-Scale Graphite: A Computational and Experimental Study

Bandgaps in layered materials are critical for enabling functionalities such as tunable photodetection, efficient energy conversion, and nonlinear optical responses, which are essential for next-generation photonic and quantum devices. Gap engineering could form heterostructures with complementary materials like transition metal dichalcogenides or perovskites for multi-functional devices. Graphite, conventionally regarded as a gapless material, exhibits a bandgap of ~100 meV in nano-scale patterned highly oriented pyrolytic graphite (HOPG), as revealed by angle-resolved photoemission spectroscopy (ARPES) and Raman measurements. Our state-of-the-art calculations, incorporating photoemission matrix element effects, predict this bandgap with remarkable accuracy and attribute it to mechanical distortions introduced during patterning. This work bridges theory and experiment, providing the direct evidence of a tunable bandgap in HOPG. Beyond its fundamental significance, this finding opens new possibilities for designing materials with tailored electronic properties, enabling advancements in terahertz devices and optoelectronics.

cond-mat.mtrl-sci↗

arXiv2024

Ising superconductivity in the bulk incommensurate layered material (PbS)$_{1.13}$(TaS$_2$)

Exploiting the spin-valley degree of freedom of electrons in materials is a promising avenue for energy-efficient information storage and quantum computing. A key challenge in utilizing spin-valley polarization is the realization of spin-valley locking in bulk systems. Here, we report a comprehensive study of the noncentrosymmetric bulk misfit compound (PbS)$_{1.13}$(TaS$_2$), showing a strong spin-valley locking. Our investigation reveals Ising superconductivity with a transition temperature of 3.14 K, closely matching that of a monolayer of TaS$_2$. Notably, the absence of charge density wave (CDW) signatures in transport measurements suggests that the PbS layers primarily act as spacers between the dichalcogenide monolayers. This is further supported by angle-resolved photoemission spectroscopy (ARPES), which shows negligible interlayer coupling, a lack of dispersion along the $k_{\perp}$ direction and significant charge transfer from the PbS to the TaS$_2$ layers. Spin resolved ARPES shows strong spin-valley locking of the electronic bands. Muon spin rotation experiments conducted in the vortex phase reveal an isotropic superconducting gap. However, the temperature dependence of the upper critical field and low-temperature specific heat measurements suggest the possibility of multigap superconductivity. These findings underscore the potential of misfit compounds as robust platforms for both realizing and utilizing spin-valley locking in bulk materials, as well as exploring proximity effects in two-dimensional structures.

cond-mat.supr-con↗

arXiv2024

Pomeranchuk instability from electronic correlations in CsTi$_3$Bi$_5$ kagome metal

Among many-body instabilities in correlated quantum systems, electronic nematicity, defined by the spontaneous breaking of rotational symmetry, has emerged as a critical phenomenon, particularly within high-temperature superconductors. Recently, this behavior has been identified in CsTi$_3$Bi$_5$, a member of the AV$_3$Sb$_5$ (A = K, Rb, Cs) kagome family, recognized for its intricate and unconventional quantum phases. Despite accumulating indirect evidence, the fundamental mechanisms driving nematicity in CsTi$_3$Bi$_5$ remain inadequately understood, sparking ongoing debates. In this study, we employ polarization-dependent angle-resolved photoemission spectroscopy to reveal definitive signatures of an orbital-selective nematic deformation in the electronic structure of CsTi$_3$Bi$_5$. This direct experimental evidence underscores the pivotal role of orbital degrees of freedom in symmetry breaking, providing new insights into the complex electronic environment. By applying the functional renormalization group technique to a fully interacting ab initio model, we demonstrate the emergence of a finite angular momentum ($d$-wave) Pomeranchuk instability in CsTi$_3$Bi$_5$, driven by the concomitant action of electronic correlations within specific orbital channels and chemical potential detuning away from Van Hove singularities. By elucidating the connection between orbital correlations and symmetry-breaking instabilities, this work lays a crucial foundation for future investigations into the broader role of orbital selectivity in quantum materials, with far-reaching implications for the design and manipulation of novel electronic phases.

cond-mat.str-el↗

arXiv2023

Electronic structure evolution of the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ with hole and electron doping

Co$_3$Sn$_2$S$_2$ has been established as a prototype of magnetic Weyl semimetal, exhibiting a ''giant'' anomalous Hall effect in its ferromagnetic phase. An attractive feature of this material is that Weyl points lie close to Fermi level, so that one can expect a high reactivity of the topological properties to hole or electron doping. We present here a direct observation with Angle Resolved Photoemission Spectroscopy of the evolution of the electronic structure under different types of substitutions : In for Sn (hole doping outside the kagome Co plane), Fe for Co (hole doping inside the kagome Co plane) and Ni for Co (electron doping inside the kagome Co plane). We observe clear shifts of selected bands, which are due both to doping and to the reduction of the magnetic splitting by doping. We discriminate between the two by studying the temperature evolution from ferromagnetic to paramagnetic state. We discuss these shifts with the help of DFT calculations using the Virtual Crystal Approximation. We find that these calculations reproduce rather well the evolution with In, but largely fail to capture the effect of Fe and Ni, where local behavior at the impurity site plays an important role.

cond-mat.str-el↗

arXiv2023

Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride

Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structural properties of chain-like InTe are essential for better understanding of device applications such as thermoelectrics. Here, we use scanning tunneling microscopy/spectroscopy (STM/STS) measurements and density functional theory (DFT) calculations to directly image the in-plane structural anisotropy in tetragonal Indium Telluride (InTe). As results, we report the direct observation of one-dimensional In1+ chains in InTe. We demonstrate that InTe exhibits a band gap of about 0.40 +-0.02 eV located at the M point of the Brillouin zone. Additionally, line defects are observed in our sample, were attributed to In1+ chain vacancy along the c-axis, a general feature in many other TlSe-like compounds. Our STS and DFT results prove that the presence of In1+ induces localized gap state, located near the valence band maximum (VBM). This acceptor state is responsible for the high intrinsic p-type doping of InTe that we also confirm using angle-resolved photoemission spectroscopy.

cond-mat.mtrl-sci↗

arXiv2023

Evolution of the spectral lineshape at the magnetic transition in Sr2IrO4 and Sr3Ir2O7

Sr2IrO4 and Sr3Ir2O7 form two families of spin-orbit Mott insulators with quite different charge gaps and an antiferromagnetic (AF) ground state. This offers a unique opportunity to study the impact of long-range magnetic order in Mott insulators. It appears to play a different role in the two families, as there is almost no change of the resistivity at the magnetic transition TN in Sr2IrO4 and a large one in Sr3Ir2O7. We use angle-resolved photoemission to study the evolution of the spectral lineshape through the magnetic transition. We use Ru and La substitutions to tune TN and discriminate changes due to temperature from those due to magnetic order. We evidence a shift and a transfer of spectral weight in the gap at TN in Sr3Ir2O7, which is absent in Sr2IrO4. We assign this behavior to a significantly larger coherent contribution to the spectral lineshape in Sr3Ir2O7, which evolves strongly at TN. On the contrary, the Sr2IrO4 lineshape is dominated by the incoherent part, which is insensitive to TN. We compare these findings to theoretical expections of the Slater vs Mott antiferromagnetism within Dynamical Mean Field Theory.

cond-mat.str-el↗

arXiv2019

Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals

Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic

cond-mat.mes-hall↗

arXiv2016

Influence of the surface symmetry breaking on the magnetism, collapsing and three dimensional dispersion of Co pnictides ACo2As2 (A=Ba, Sr, Ca)

We use angle-resolved photoemission to study the three dimensional (3D) electronic structure of Co pnictides ACo2As2 with A=Ba, Sr, Ca or a mixture of Sr and Ca. These compounds are isostructural to Fe based superconductors, but have one more electron in the Co $3d$ orbitals. Going from Ba to Ca, they become more and more 3D, eventually forming a 'collapsed' tetragonal phase, where the distance between CoAs layers is markedly reduced. The observed periodicity of the 3D electronic structure matches in each case that expected from the distance between the planes in the bulk. However, the electronic structure is better fitted by a calculation corresponding to a slab with 2 CoAs layers than to the bulk structure. We attribute this to subtle modifications of the 2D electronic structure induced by the truncation of the 3D dispersion at the surface in the ARPES measurement. We further study how this affects the electronic properties. We show that, despite this distortion, the electronic structure of CaCo2As2 is essentially that expected for a collapsed phase. Electronic correlations produce a renormalization of the electronic structure by a factor 1.4, which is not affected by the transition to the collapsed state. On the other hand, a small shift of the Fermi level reduces the density of states in the eg bands and suppresses the magnetic transition expected in CaCo2As2. Our study evidences that observing the bulk periodicity is not sufficient to ensure bulk sensitivity. It further gives direct information on the role of 3D interactions, mostly governed by Co-As hybridization, among eg and t2g orbitals. It is also useful to better understand the electronic structure of Fe superconductors and the range of validity of ARPES measurements.

cond-mat.str-el↗

arXiv2016

Orbital-dependent Fermi Surface shrinking as a fingerprint of nematicity in FeSe

The large anisotropy in the electronic properties across a structural transition in several correlated systems has been identified as the key manifestation of electronic nematic order, breaking rotational symmetry. In this context, FeSe is attracting tremendous interest, since electronic nematicity develops over a wide range of temperatures, allowing accurate experimental investigation. Here we combine angle-resolved photoemission spectroscopy and theoretical calculations based on a realistic multi-orbital model to unveil the microscopic mechanism responsible for the evolution of the electronic structure of FeSe across the nematic transition. We show that the self-energy corrections due to the exchange of spin fluctuations between hole and electron pockets are responsible for an orbital-dependent shrinking of the Fermi Surface that affects mainly the $xz/yz$ parts of the Fermi surface. This result is consistent with our experimental observation of the Fermi Surface in the high-temperature tetragonal phase, that includes the $xy$ electron sheet that was not clearly resolved before. In the low-temperature nematic phase, we experimentally confirm the appearance of a large ($\sim$ 50meV) $xz/yz$ splittings. It can be well reproduced in our model by assuming a moderate splitting between spin fluctuations along the $x$ and $y$ crystallographic directions. Our mechanism shows how the full entanglement between orbital and spin degrees of freedom can make a spin-driven nematic transition equivalent to an effective orbital order.

cond-mat.str-el↗

arXiv2016

ARPES view of orbitally resolved quasiparticle lifetimes in iron pnictides

We study with ARPES the renormalization and quasiparticle lifetimes of the $d_{xy}$ and $d_{xz}$/$d_{yz}$ orbitals in two iron pnictides, LiFeAs and Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ (Co8). We find that both quantities depend on orbital character rather than on the position on the Fermi Surface (for example hole or electron pocket). In LiFeAs, the renormalizations are larger for $d_{xy}$, while they are similar on both types of orbitals in Co8. The most salient feature, which proved robust against all the ARPES caveats we could think of, is that the lifetimes for $d_{xy}$ exhibit a markedly different behavior than those for $d_{xz}$/$d_{yz}$. They have smaller values near $E_F$ and exhibit larger $ω$ and temperature dependences. While the behavior of $d_{xy}$ is compatible with a Fermi liquid description, it is not the case for $d_{xz}$/$d_{yz}$. This situation should have important consequences for the physics of iron pnictides, which have not been considered up to now. More generally, it raises interesting questions on how a Fermi liquid regime can be established in a multiband system with small effective bandwidths.

cond-mat.str-el↗

arXiv2015

Direct evidence for minority spin gap in the Co2MnSi Heusler alloy

Half Metal Magnets are of great interest in the field of spintronics because of their potential full spin-polarization at the Fermi level and low magnetization damping. The high Curie temperature and predicted 0.7eV minority spin gap make the Heusler alloy Co2MnSi very promising for applications.We investigated the half-metallic magnetic character of this alloy using spin-resolved photoemission, ab initio calculation and ferromagnetic resonance. At the surface of Co2MnSi, a gap in the minority spin channel is observed, leading to 100% spin polarization. However, this gap is 0.3 eV below the Fermi level and a minority spin state is observed at the Fermi level. We show that a minority spin gap at the Fermi energy can nevertheless be recovered either by changing the stoichiometry of the alloy or by covering the surface by Mn, MnSi or MgO. This results in extremely small damping coefficients reaching values as low as 7x 10-4.

cond-mat.mtrl-sci↗