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Frank Angeles

Publications and source records attributed to Frank Angeles.

3 recordsLinked to original sources

Strong Temperature Dependence of Thermal Conductivity in High-Purity Cubic Boron Arsenide

Materials with high thermal conductivity are needed to conduct heat away from hot spots in high power electronics and optoelectronic devices. Cubic boron arsenide (c-BAs) has a high thermal conductivity due to its special phonon dispersion relation. Previous experimental studies of c-BAs report a room-temperature thermal conductivity between 1000 and 1300 W m-1 K-1. We synthesized high purity isotopically enriched c-BAs single crystals with room-temperature thermal conductivity of around 1500 W m-1 K-1. Using time-domain thermoreflectance (TDTR), we measured thermal conductivity and found a 1/T2 temperature dependence between 300 K and 600 K - slightly stronger than predictions from state-of-the-art theoretical models. Brillouin and Raman scattering revealed minimal changes in phonon frequencies over the same temperature range, suggesting that the observed 1/T2 dependence is not caused by temperature dependent changes in phonon dispersion. To probe defect densities in the BAs crystals we studied, we conducted transient reflectivity microscopy (TRM) measurements of absorption at sub-bandgap photon energies. We observe a correlation between TRM signal intensity and thermal conductivity. Notably, samples with thermal conductivity near 1500 W m-1 K-1 still exhibited nonzero TRM signals, suggesting the presence of defects despite the high thermal conductivity.

cond-mat.mtrl-sci

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

We report the results of the investigation of bulk and surface acoustic phonons in the undoped and boron-doped single-crystal diamond films using the Brillouin-Mandelstam light scattering spectroscopy. The evolution of the optical phonons in the same set of samples was monitored with Raman spectroscopy. It was found that the frequency and the group velocity of acoustic phonons decrease non-monotonically with the increasing boron doping concentration, revealing pronounced phonon softening. The change in the velocity of the shear horizontal and the high-frequency pseudo-longitudinal acoustic phonons in the degenerately doped diamond, as compared to the undoped diamond, was as large as ~15% and ~12%, respectively. As a result of boron doping, the velocity of the bulk longitudinal and transverse acoustic phonons decreased correspondingly. The frequency of the optical phonons was unaffected at low boron concentration but experienced a strong decrease at the high doping level. The density-functional-theory calculations of the phonon band structure for the pristine and highly-doped sample confirm the phonon softening as a result of boron doping in diamond. The obtained results have important implications for thermal transport in heavily doped diamond, which is a promising material for ultra-wide-band-gap electronics.

cond-mat.mtrl-sci

Differentiating Contributions of Electrons and Phonons to the Thermoreflectance Spectra of Gold

To better understand the many effects of temperature on the optical properties of metals, we experimentally and theoretically quantify the electron vs. phonon contributions to the thermoreflectance spectra of gold. We perform a series of pump/probe measurements on nanoscale Pt/Au bilayers at wavelengths between 400 and 1000 nm. At all wavelengths, we find that changes in phonon temperature, not electron temperature, are the primary contributor to the thermoreflectance of Au. The thermoreflectance is most sensitive to the electron temperature at wavelength of ~480 nm due to interband transitions between d-states and the Fermi-level. In the near infrared, the electron temperature is responsible for only ~2% of the total thermoreflectance. We also compute the thermoreflectance spectra of Au from first principles. Our calculations further confirm that phonon temperature dominates thermoreflectance of Au. Most of Au's thermoreflectance is due to the effect of the phonon population on electron lifetime.

cond-mat.mtrl-sci