arXiv subjects

Frank Greer

Publications and source records attributed to Frank Greer.

7 recordsLinked to original sources

arXiv2025

Directional atomic layer etching of MgO-doped lithium niobate using Br-based plasma

Lithium niobate (LiNbO$_3$, LN) is a nonlinear optical material of high interest for integrated photonics with applications ranging from optical communications to quantum information processing. The performance of on-chip devices based on thin-film lithium niobate (TFLN) is presently limited by fabrication imperfections such as sidewall surface roughness and geometry inhomogeneities over the chip. Atomic layer etching (ALE) could potentially be used to overcome these difficulties. Although an isotropic ALE process for LN has been reported, performing LN fabrication completely with ALE faces several challenges, including the lack of a directional ALE process for pattern transfer and the redeposition of involatile compounds. Here, we report a directional ALE process for LN consisting of sequential exposures of HBr/BCl$_3$/Ar plasma for surface modification and Ar plasma for removal. The HBr chemistry is found to decrease redeposition compared to F- and Cl-based plasmas, which we attribute to the higher vapor pressures of Br-based products. A grating pattern etched entirely by the process (total etch depth of 220 nm) exhibits no aspect ratio dependent etching (ARDE) down to the smallest tested gap of 150 nm, in contrast to ion milling in which ARDE manifests even at 300 nm gaps for the same etch depth. The HBr plasma chemistry is also found to support an isotropic process consisting of sequential exposures of H$_2$ plasma and HBr/BCl$_3$/Ar plasma. These processes could be used together to perform the complete fabrication process for TFLN devices, eliminating imperfections arising from ion milling.

cond-mat.mtrl-sci↗

arXiv2023

Plasma-enhanced atomic layer deposition of titanium nitride for superconducting devices

This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D) structures. We introduced an additional substrate biasing cycle to densify the film and remove ligand residues, augmenting the properties while minimizing impurities. While reactive-sputtered TiN films exhibit high quality, our technique ensures superior uniformity by consistently maintaining a desired sheet resistance greater than 95 percent across a 6inch wafer, a critical aspect for fabricating extensive arrays of superconducting devices and optimizing wafer yield. Moreover, our films demonstrate exceptional similarity to conventional reactive-sputtered films, consistently reaching a critical temperature (Tc) of 4.35 K with a thickness of around 40 nm. This marks a notable achievement compared to previously reported ALD-based superconducting TiN. Using the same process as for planar films, we obtained Tc for aspect ratios (ARs) ranging from 2 to 40, observing a Tc of approximately 2 K for ARs between 2 and 10.5. We elucidate the mechanisms contributing to the limitations and degradation of superconducting properties over these aggressive 3D structures. Our results seamlessly align with both current and next-generation superconducting technologies, meeting stringent criteria for thin-film constraints, large-scale deposition, conformality, 3D integration schemes, and yield optimization.

cond-mat.supr-con↗

arXiv2023

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasmas

Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by propagation losses arising from surface roughness and corrugations. Atomic layer etching (ALE) could potentially smooth these features and thereby increase photonic performance, but no ALE process has been reported for LN. Here, we report an isotropic ALE process for $x$-cut MgO-doped LN using sequential exposures of H$_2$ and SF$_6$/Ar plasmas. We observe an etch rate of $1.59 \pm 0.02$ nm/cycle with a synergy of $96.9$%. We also demonstrate ALE can be achieved with SF$_6$/O$_2$ or Cl$_2$/BCl$_3$ plasma exposures in place of the SF$_6$/Ar plasma step with synergies of $99.5$% and $91.5$% respectively. The process is found to decrease the sidewall surface roughness of TFLN waveguides etched by physical Ar$^+$ milling by 30% without additional wet processing. Our ALE process could be used to smooth sidewall surfaces of TFLN waveguides as a post-processing treatment, thereby increasing the performance of TFLN nanophotonic devices and enabling new integrated photonic device capabilities.

cond-mat.mes-hall↗

arXiv2011

A system and methodologies for absolute QE measurements from the vacuum ultraviolet through the NIR

In this paper we present our system design and methodology for making absolute quantum efficiency (QE) measurements through the vacuum ultraviolet (VUV) and verify the system with delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, good dewar chamber vacuum to prevent on-chip condensation, and more stringent handling requirements.

astro-ph.IM↗

arXiv2011

UV anti-reflection coatings for use in silicon detector design

We report on the development of coatings for a CCD detector optimized for use in a fixed dispersion UV spectrograph. Due to the rapidly changing index of refraction of Si, single layer broadband anti-reflection coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a CCD detector with theoretical quantum efficiencies (QE) of greater than 60% at wavelengths from 120 to 300nm. This high efficiency may be reached by coating a backside illuminated, thinned, delta-doped CCD with a series of thin film anti-reflection coatings. The materials tested include MgF2 (optimized for highest performance from 120-150nm), SiO2 (150-180nm), Al2O3(180-240nm), MgO (200-250nm), and HfO2 (240-300nm). A variety of deposition techniques were tested and a selection of coatings which minimized reflectance on a Si test wafer were applied to live devices. We also discuss future uses and improvements, including graded and multi-layer coatings.

astro-ph.IM↗

arXiv2011

Silicon Detector Arrays with Absolute Quantum Efficiency over 50% in the Far Ultraviolet for Single Photon Counting Applications

We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over 50% external QE in the far and near-ultraviolet in megapixel arrays. We have demonstrated that other device parameters such as dark current are unchanged after these processes. In this paper, we report on these results and briefly discuss the techniques and processes employed.

astro-ph.IM↗

arXiv2009

Large Focal Plane Arrays for Future Missions

We outline the challenges associated with the development and construction of large focal plane arrays for use both on the ground and in space. Using lessons learned from existing JPL-led and ASU/JPL partnership efforts to develop technology for, and design such arrays and imagers for large focal planes, we enumerate here the remaining problems that need to be solved to make such a venture viable. Technologies we consider vital for further development include: (1) architectures, processes, circuits, and readout solutions for production and integration of four-side buttable, low-cost, high-fidelity, high-performance, and high-reliability CCD and CMOS imagers; (2) modular, four-side buttable packaging of CCD/CMOS imagers; (3) techniques and hardware to test and characterize the large number of chips required to produce the hundreds of flight-grade detectors needed for large focal-plane missions being conceived at this time; (4) ground based testbed needs, such as a large format camera mounted on a ground-based telescope, to field test the detectors and the focal plane technology solutions; and (5) validation of critical sub-components of the design on a balloon mission to ensure their flight-readiness. This paper outlines the steps required to provide a mature solution to the astronomical community with a minimal investment, building on years of planning and investments already completed at JPL.

astro-ph.IM↗