arXiv subjects

Frank Ortmann

Publications and source records attributed to Frank Ortmann.

At least 19 recordsLinked to original sources

arXiv2026

Charge Transport Framework for Crystalline pi-Conjugated Materials

Quantitative charge-transport modelling in crystalline pi-conjugated polymers requires an electronic representation that captures extended conjugation and material-specific electron-phonon interactions on equal footing. We present a Wannier-orbital-based formulation of the transient-polaron-localization (TPL) framework for quantitative charge-transport simulations in crystalline pi-conjugated polymers. By expressing all interactions directly in a Wannier representation derived from first-principles calculations, the approach avoids artificial fragmentation of polymer backbones and enables a consistent, material-specific description of electronic couplings and electron-phonon interactions. Low- and high-frequency vibrational modes are incorporated within a mode-resolved TPL formalism, yielding an effective electronic Hamiltonian that captures both dynamic disorder and polaronic renormalization. The methodology is demonstrated for the ambipolar crystalline naphthalenediimide-bithiophene copolymer, enabling a direct comparison of electron and hole transport along the polymer backbone and pi-stacking directions. The simulations reproduce key transport features, including pronounced anisotropy and higher electron than hole mobility. Additional studies on single- and bi-chain systems reveal the essential role of inter-chain coherence in supporting efficient transport along the polymer backbone. Beyond this specific system, the Wannier-orbital-based TPL framework provides a transferable route to disentangle intrinsic charge-transport mechanisms in crystalline pi-conjugated materials and establishes a foundation for future work.

cond-mat.mtrl-sci↗

arXiv2026

Interplay between Electronic Structure, Chemical Bonding, and Lattice Symmetry in Bismuth Vanadate

Bismuth vanadate (BiVO$_4$) is a prototypical oxide photocatalyst that occurs in both tetragonal and monoclinic scheelite phases with markedly different photocatalytic and photoelectrochemical activities. Accurately identifying the monoclinic phase as the ground state and explaining the origin of its symmetry-breaking distortion are unusually challenging from a theoretical perspective, with various levels of theory and associated physical interpretations for this behaviour reported in the literature. Here, we resolve these discrepancies by systematically assessing the role of exact exchange with and without spin-orbit coupling, demonstrating that an accurate treatment of electronic localization is essential to stabilize the monoclinic scheelite structure. Using this framework, we compute the electronic band structure through dense sampling of the Brillouin zone and show that the band edges in monoclinic and tetragonal BiVO$_4$ lie far from conventional high-symmetry paths, leading to substantial differences in band gaps and carrier effective masses. Choosing the exchange-correlation functional that best reproduces the crystal structure leads to excellent predictions of the band gap once excitonic and thermal effects are taken into account. In addition, we show that the monoclinic distortion is driven by charge transfer between non-equivalent oxygen sites, which breaks the lattice symmetry and is suppressed by self-interaction errors when using semi-local DFT. These results establish a direct connection between the exchange-correlation functional, electronic localization, chemical bonding, and structural stability in BiVO$_4$, providing a foundation for robust ab initio descriptions of phase stability and optoelectronic properties in such complex oxides.

cond-mat.mtrl-sci↗

arXiv2026

Ultrafast photo-thermoelectric currents in graphene junctions in the mid-infrared

Graphene is widely recognized for its ultrafast and broadband photocurrent response, but whether the broadband ultrafast characteristics are preserved at mid-infrared wavelengths with photon energies below the optical phonon energy remains an open question. Here, we investigate the carrier dynamics in graphene junctions under mid-infrared excitation using an ultrafast pump-probe photocurrent spectroscopy. We utilize dual split gate devices to demonstrate that the photo-thermoelectric effect can dominate the photoresponse of graphene also for a mid-infrared femtosecond excitation. We observe that graphene retains its broadband photocurrent response in this spectral region, but the photocurrent relaxation time increases from ca. 2 ps below 8-9 micrometer up to 3 ps at longer mid-infrared wavelengths. The absence of a pronounced phonon bottleneck in the decay dynamics at room temperature suggests an efficient interplay of electron-electron and electron-phonon scattering even for photon energies below the optical phonon energy in graphene. The observed wavelength dependence of the photocurrent relaxation times is consistent with energy-dependent theoretical relaxation times as derived from a microscopic transport theory of graphene that includes electron-phonon coupling within a Holstein-Peierls Hamiltonian.

cond-mat.mes-hall↗

arXiv2026

Organic Hydrogen Sensors for Potential Use in Safety-Critical Environments

Accurate monitoring of the hydrogen concentration is critical for optimizing fuel cell performance, minimizing purge losses, and reducing long-term degradation. Conventional hydrogen sensors often rely on catalytic materials and face limitations such as the need of oxygen purging when operated in fuel cell environments. Here, we report the discovery of a novel hydrogen-sensing mechanism based on organic molecules, without the use of catalytic metals. The sensor is based on a typical vertical stack geometry, containing $\mathrm{Alq_3}$ as active organic material. Upon exposure to hydrogen, the device shows an increase in resistivity, yielding a reliable sensor signal that varies linearly with hydrogen concentration, temperature, and humidity, and exhibits a relative response of up to 3.5 % at 100 %vol hydrogen. By exposing the sensor to an external magnetic field, the rise and fall times of the sensor response were found to be tunable. This novel organic sensor demonstrates sensitivity across a wide range of hydrogen concentrations under fuel cell-relevant conditions and beyond. This new class of hydrogen sensors with high miniaturization potential and cost efficiency paves the way for real-time hydrogen monitoring and advanced control strategies in fuel cells, the chemical industry, or energy storage applications.

physics.app-ph↗

arXiv2026

Single-Atom Tuning of Structural and Optoelectronic Properties in Halogenated Anthracene-Based Covalent Organic Frameworks

Strategies for tuning structural and (opto-)electronic properties are fundamental to the rational design of functional materials. Here, we present a molecular design approach for precisely modulating the optoelectronic properties of covalent organic frameworks (COFs) through single-atom halogen substitution on $\pi$-extended anthracene linkers. Using a Wurster-type tetratopic amine (W-NH$_2$) and a series of anthracene-based dialdehydes bearing H, Cl, Br, or I at the 2-position, a family of imine-linked COFs, W-A-X (X = H, Cl, Br, I), was synthesized, all displaying well-ordered porous structures. The halogen substituent strongly influences framework formation, with brominated COFs forming substantially larger crystalline domains than their chloro- and iodo-functionalized analogues. UV-vis absorption and photoluminescence measurements reveal a systematic redshift across the series $(\mathrm{H < Cl < Br < I})$, demonstrating that a single-atom modification effectively tunes the optical response. Time-dependent density functional theory calculations on both isolated fragments and extended COF models attribute these trends to halogen-induced changes in the COF band structure and provide a mechanistic understanding of how single-atom substitution influences the optoelectronic properties of the extended $\pi$-framework. Overall, this study establishes single-atom halogen substitution as a powerful and modular strategy for tailoring the structural and optical properties of anthracene-based COFs.

cond-mat.mtrl-sci↗

arXiv2025

Evaluating First-Principles Electron-Phonon Couplings: Consistency Across Methods and Implementations

Electron-phonon coupling (EPC) is fundamental for understanding the behavior of molecules and crystals, influencing phenomena such as charge transport, energy transfer, phase transitions, and polaron formation. Accurate computational methods to calculate EPCs from first principles are essential, but their complexity has resulted in a variety of computational strategies, raising concerns about their mutual consistency. In this study, we provide a systematic benchmark of methods for EPC calculation by comparing two fundamentally different {\it ab initio} methodologies. We investigate Gaussian-type orbital methods based on the \textsc{CP2K} code and plane-wave-based projector-augmented-wave (PAW) methods combined with maximally localized Wannier functions, as implemented in \textsc{VASP} and \textsc{wannier90}. In addition, we further distinguish between the derivative--of--Hamiltonian ($dH$) and derivative--of--states ($d\psi$) approaches for obtaining EPC parameters. The comparison is conducted on a representative set of organic molecules, including pyrazine, pyridine, bithiophene, and quarterthiophene, varying significantly in size and flexibility. We find excellent agreement across implementations and basis sets when employing the same computational approach ($dH$ or $d\psi$), demonstrating robust consistency between the numerical schemes. However, noticeable deviations occur when comparing the $dH$ and $d\psi$ approaches within each code and for specific cases discussed in detail. Our findings emphasize the reliability of EPC computations using the $dH$ method and caution against potential pitfalls associated with the $d\psi$ approach, providing guidance for future EPC calculations and model parameterizations.

physics.chem-ph↗

arXiv2024

Hall Transport in Organic Semiconductors

We establish a universal theory to understand quasiparticle Hall effects and transverse charge-carrier transport in organic semiconductors. The simulations are applied to organic crystals inspired by rubrene and cover multiple transport regimes. This includes calculations of the intrinsic Hall conductivity in pristine crystals, which are connected with a simple description of semi-classical electron transport that involves the concept of closed electronic orbits in the band structure, which can be easily calculated in density functional theory. Furthermore, this framework is employed to simulate temperature-dependent longitudinal and transverse mobilities in rubrene. These simulations are compared to experimental findings, providing insights into these results by characterizing the non-ideality of the Hall effect due to the influence of vibrational disorder. We finally investigate the conditions for the observation of Shubnikov-de Haas oscillations in the longitudinal resistivity and quantized Hall plateaus in the transverse resistivity. A clear picture why this is not observed in rubrene is developed. These insights into classical and quantum Hall effects and their intermediates in organic semiconductors establish a blueprint for future explorations in similar systems.

cond-mat.mtrl-sci↗

arXiv2024

Band Structure Engineering in Highly Crystalline Organic Semiconductors

Blending of semiconductors for controlling the energy levels (band structure engineering) is an important technique, in particular, for optoelectronic applications. The underlying physics is the delocalized Bloch states, which average over the potential landscape of the blend. For organic semiconductors, it has been shown that two quite different effects, the dielectric constant and electrostatic interaction between molecules, can be used to tune the energy gap and ionization energy of disordered and weakly crystalline organic semiconductor blends. It is so far not known whether the electronic delocalization in organic crystals with large bandwidths can contribute to the energy structure engineering of the blend in a way similar to that in inorganic semiconductors. Here, we investigate the growth of highly ordered organic thin-film blends with a similar chemical structure and show the effect of band structure engineering by spectroscopic methods. We rationalize the experimental results with comprehensive theoretical simulations, showing that the delocalization is a significant effect. Our work paves the way for engineering the band structure of highly ordered organic semiconductor thin films that can be tailored for the desired optoelectronic device application.

cond-mat.mtrl-sci↗

arXiv2023

Linear Scaling Approach for Optical Excitations Using Maximally Localized Wannier Functions

We present a theoretical method for calculating optical absorption spectra based on maximally localized Wannier functions, which is suitable for large periodic systems. For this purpose, we calculate the exciton Hamiltonian, which determines the Bethe-Salpeter equation for the macroscopic polarization function and optical absorption characteristics. The Wannier functions are specific to each material and provide a minimal and therefore computationally convenient basis. Furthermore, their strong localization greatly improves the computational performance in two ways: first, the resulting Hamiltonian becomes very sparse and, second, the electron-hole interaction terms can be evaluated efficiently in real space, where large electron-hole distances are handled by a multipole expansion. For the calculation of optical spectra we employ the sparse exciton Hamiltonian in a time-domain approach, which scales linearly with system size. We demonstrate the method for bulk silicon - one of the most frequently studied benchmark systems - and envision calculating optical properties of systems with much larger and more complex unit cells, which are presently computationally prohibitive.

cond-mat.mes-hall↗

arXiv2021

Efficient Time-Domain Approach for Linear Response Functions

We derive the general Kubo formula in a form that solely utilizes the time evolution of displacement operators. The derivation is based on the decomposition of the linear response function into its time symmetric and time anti-symmetric part. We relate this form to the well-known fluctuation-dissipation formula and discuss theoretical and numerical aspects of it. The approach is illustrated with an analytical example for magnetic resonance as well as a numerical example where we analyze the electrical conductivity tensor and the Chern insulating state of the disordered Haldane model. We introduce a highly efficient time-domain approach that describes the quantum dynamics of the resistivity of this model with an at least 1000-fold better performance in comparison to existing time-evolution schemes.

cond-mat.mes-hall↗

arXiv2020

Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor

The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trapping or limited by the injection barrier with the electrodes. Here we show that only the presence of a top dielectric turns an n-type polymer semiconductor (N2200, Polyera ActiveInk) into an ambipolar one, as detected from both bottom and top gated OFET operation. The effect is independent of the channel thickness and the top dielectric combinations. Variable temperature transfer characteristics show that both the electrons and holes can be equally transported through the bulk of the polymer semiconductor.

physics.app-ph↗

arXiv2018

Linear Scaling Quantum Transport Methodologies

In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. The simulation of quantum transport in realistic materials calls for the development of linear scaling, or order-$N$, numerical methods, which then become enabling tools for guiding experimental research and for supporting the interpretation of measurements. In this review, we describe and compare different order-$N$ computational methods that have been developed during the past twenty years, and which have been used extensively to explore quantum transport phenomena in disordered media. We place particular focus on the zero-frequency electrical conductivities derived within the Kubo-Greenwood and Kubo-Streda formalisms, and illustrate the capabilities of these methods to tackle the quasi-ballistic, diffusive, and localization regimes of quantum transport in the noninteracting limit. The fundamental issue of computational cost versus accuracy of various proposed numerical schemes is addressed in depth. We then illustrate the usefulness of these methods with various examples of transport in disordered materials, such as polycrystalline and defected graphene models, 3D metals and Dirac semimetals, carbon nanotubes, and organic semiconductors. Finally, we extend the review to the study of spin dynamics and topological transport, for which efficient approaches for calculating charge, spin, and valley Hall conductivities are described.

cond-mat.mes-hall↗

arXiv2018

Pseudospin-driven spin relaxation mechanism in graphene

The possibility of transporting spin information over long distances in graphene, owing to its small intrinsic spin-orbit coupling (SOC) and the absence of hyperfine interaction, has led to intense research into spintronic applications. However, measured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge-density and disorder dependences remain unconvincingly described by conventional mechanisms. Here, we unravel a spin relaxation mechanism for nonmagnetic samples that follows from an entanglement between spin and pseudospin driven by random SOC, which makes it unique to graphene. The mixing between spin and pseudospin-related Berry's phases results in fast spin dephasing even when approaching the ballistic limit, with increasing relaxation times away from the Dirac point, as observed experimentally. The SOC can be caused by adatoms, ripples or even the substrate, suggesting novel spin manipulation strategies based on the pseudospin degree of freedom.

cond-mat.mes-hall↗

arXiv2016

Unconventional Features in the Quantum Hall Regime of Disordered Graphene: Percolating Impurity States and Hall Conductance Quantization

We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy bandgap and Landau level degeneracy breaking. By using efficient real-space transport methodologies, we compute both the dissipative and Hall conductivities of large size graphene sheets with random distribution of model single and double vacancies. By analyzing the scaling of transport coefficients with defect density, system size and magnetic length, we elucidate the origin of anomalous quantum Hall features as magnetic-field dependent impurity states, which percolate at some critical energies. These findings shed light on unidentified states and quantum transport anomalies reported experimentally.

cond-mat.mes-hall↗

arXiv2015

Spin Dynamics and Relaxation in Graphene Dictated by Electron-hole Puddles

The understanding of spin dynamics and relaxation mechanisms in clean graphene and the upper time and length scales on which spin devices can operate are prerequisites to realizing graphene spintronic technologies. Here we theoretically reveal the nature of fundamental spin relaxation mechanisms in clean graphene on different substrates with spin-orbit Rashba fields as low as a few tens of micron eV. Spin lifetimes ranging from 50 picoseconds up to several nanoseconds are found to be dictated by substrate-induced electron-hole characteristics. A crossover in the spin relaxation mechanism from a Dyakonov-Perel type for SiO2 substrates to a broadening-induced dephasing for hBN substrates is described. The energy dependence of spin lifetimes, their ratio for spins pointing out-of-plane and in-plane, and the scaling with disorder provide a global picture about spin dynamics and relaxation in ultraclean graphene in presence of electron-hole puddles.

cond-mat.mes-hall↗

arXiv2015

Spin Transport in Hydrogenated Graphene

In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. We first discuss the spin-orbit coupling induced by local $\sigma-\pi$ re-hybridization and ${\bf sp}^{3}$ C-H defect formation together with the formation of a local magnetic moment. First-principles calculations of hydrogenated graphene unravel the strong interplay of spin-orbit and exchange couplings. The concept of magnetic scattering resonances, recently introduced \cite{Kochan2014} is revisited by describing the local magnetism through the self-consistent Hubbard model in the mean field approximation in the dilute limit, while spin relaxation lengths and transport times are computed using an efficient real space order N wavepacket propagation method. Typical spin lifetimes on the order of 1 nanosecond are obtained for 1 ppm of hydrogen impurities (corresponding to transport time about 50 ps), and the scaling of spin lifetimes with impurity density is described by the Elliott-Yafet mechanism. This reinforces the statement that magnetism is the origin of the substantial spin polarization loss in the ultraclean graphene limit.

cond-mat.mes-hall↗

arXiv2015

Efficient Linear Scaling Approach for Computing the Kubo Hall Conductivity

We report an order-N approach to compute the Kubo Hall conductivity for disorderd two-dimensional systems reaching tens of millions of orbitals, and realistic values of the applied external magnetic fields (as low as a few Tesla). A time-evolution scheme is employed to evaluate the Hall conductivity $σ_{xy}$ using a wavepacket propagation method and a continued fraction expansion for the computation of diagonal and off-diagonal matrix elements of the Green functions. The validity of the method is demonstrated by comparison of results with brute-force diagonalization of the Kubo formula, using (disordered) graphene as system of study. This approach to mesoscopic system sizes is opening an unprecedented perspective for so-called reverse engineering in which the available experimental transport data are used to get a deeper understanding of the microscopic structure of the samples. Besides, this will not only allow addressing subtle issues in terms of resistance standardization of large scale materials (such as wafer scale polycrystalline graphene), but will also enable the discovery of new quantum transport phenomena in complex two-dimensional materials, out of reach with classical methods.

cond-mat.mes-hall↗

arXiv2014

Quantum transport in chemically functionalized graphene at high magnetic field: Defect-Induced Critical States and Breakdown of Electron-Hole Symmetry

Unconventional magneto-transport fingerprints in the quantum Hall regime (with applied magnetic field from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from 0.5% to few percents), the electron-hole symmetry of Landau levels is broken, while a double-peaked conductivity develops at low-energy, resulting from the formation of critical states conveyed by the random network of defects-induced impurity states. Scaling analysis hints towards the existence of an additional zero-energy quantized Hall conductance plateau, which is here not connected to degeneracy lifting of Landau levels by sublattice symmetry breakage. This singularly contrasts with usual interpretation, and unveils a new playground for tailoring the fundamental characteristics of the quantum Hall effect.

cond-mat.mes-hall↗