arXiv subjects

Frank Schoofs

Publications and source records attributed to Frank Schoofs.

6 recordsLinked to original sources

arXiv2024

Dark-Field X-ray Microscopy for 2D and 3D imaging of Microstructural Dynamics at the European X-ray Free Electron Laser

Dark field X-ray microscopy (DXFM) can visualize microstructural distortions in bulk crystals. Using the femtosecond X-ray pulses generated by X-ray free-electron lasers (XFEL), DFXM can achieve sub-μm spatial resolution and <100 fs time resolution simultaneously. In this paper, we demonstrate ultrafast DFXM measurements at the European XFEL to visualize an optically-driven longitudinal strain wave propagating through a diamond single crystal. We also present two DFXM scanning modalities that are new to the XFEL sources: spatially 3D and 2D axial-strain scans with sub-μm spatial resolution. With this progress in XFEL-based DFXM, we discuss new opportunities to study multi-timescale spatio-temporal dynamics of microstructures.

cond-mat.mes-hall↗

arXiv2024

Comment on "Comments regarding "Transonic dislocation propagation in diamond" by Katagiri, et al. (Science 382, 69-72, 2023)" by Hawreliak, et al. (arXiv:2401.04213)

In their comment (1), Hawreliak et al. claims that our observation of stacking fault formation and transonic dislocation propagation in diamond (2) is not valid as they interpret the observed features as cracks. In this response letter, we describe our rationale for interpreting the observed features as stacking faults. We also address other points raised in their comments, including the clarifications of how the results of Makarov et al. (3) are not in conflict with our study.

cond-mat.mtrl-sci↗

arXiv2023

Transonic Dislocation Propagation in Diamond

The motion of line defects (dislocations) has been studied for over 60 years but the maximum speed at which they can move is unresolved. Recent models and atomistic simulations predict the existence of a limiting velocity of dislocation motions between the transonic and subsonic ranges at which the self-energy of dislocation diverges, though they do not deny the possibility of the transonic dislocations. We use femtosecond x-ray radiography to track ultrafast dislocation motion in shock-compressed single-crystal diamond. By visualizing stacking faults extending faster than the slowest sound wave speed of diamond, we show the evidence of partial dislocations at their leading edge moving transonically. Understanding the upper limit of dislocation mobility in crystals is essential to accurately model, predict, and control the mechanical properties of materials under extreme conditions.

cond-mat.mtrl-sci↗

arXiv2023

Simultaneous Bright- and Dark-Field X-ray Microscopy at X-ray Free Electron Lasers

The structures, strain fields, and defect distributions in solid materials underlie the mechanical and physical properties across numerous applications. Many modern microstructural microscopy tools characterize crystal grains, domains and defects required to map lattice distortions or deformation, but are limited to studies of the (near) surface. Generally speaking, such tools cannot probe the structural dynamics in a way that is representative of bulk behavior. Synchrotron X-ray diffraction based imaging has long mapped the deeply embedded structural elements, and with enhanced resolution, Dark Field X-ray Microscopy (DFXM) can now map those features with the requisite nm-resolution. However, these techniques still suffer from the required integration times due to limitations from the source and optics. This work extends DFXM to X-ray free electron lasers, showing how the $10^{12}$ photons per pulse available at these sources offer structural characterization down to 100 fs resolution (orders of magnitude faster than current synchrotron images). We introduce the XFEL DFXM setup with simultaneous bright field microscopy to probe density changes within the same volume. This work presents a comprehensive guide to the multi-modal ultrafast high-resolution X-ray microscope that we constructed and tested at two XFELs, and shows initial data demonstrating two timing strategies to study associated reversible or irreversible lattice dynamics.

cond-mat.mtrl-sci↗

arXiv2015

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that Fermi level pinning is connected to the insulator-metal transition in doped ZnO, and that controlling this transition may be key to un-pinning the Fermi level in oxide / Si Schottky junctions.

cond-mat.mtrl-sci↗

arXiv2013

Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism

The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation.

cond-mat.mtrl-sci↗