arXiv subjects

Frans Munnik

Publications and source records attributed to Frans Munnik.

12 recordsLinked to original sources

arXiv2026

Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2

Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering structural phase transitions, which limits switching speed and endurance. In this study, we engineered an iso-symmetric MIT on average in epitaxial rutile VO2 thin films via an in-situ nitrogen doping strategy. Nitrogen incorporation effectively suppresses V-V dimerization, enabling an iso-symmetric MIT, while preserving the original crystal symmetry. Furthermore, in-operando time-resolved optical reflectivity measurements revealed a shortened switching time in nitrogen-doped films, highlighting their enhanced performance. Our findings provide critical insights into the underlying mechanisms of MITs and introduce anion doping as a powerful tool for tailoring phase transitions in strongly correlated electron systems. This approach opens new avenues for the development of high-performance electronic and photonic devices.

cond-mat.mtrl-sci↗

arXiv2026

Tuning Structure and Magnetism in Large-Scale 2D Ferromagnet Fe$_3$GeTe$_2$ through Ni Doping

Two-dimensional ferromagnets with strong perpendicular magnetic anisotropy exhibit magnetic order down to the monolayer thickness, beneficial for energy-efficient spintronic devices. In this work, molecular beam epitaxy has been employed to realize controlled Ni-doping in Fe$_{3}$GeTe$_{2}$ (FGT) epitaxial films. MBE not only enables a large-scale growth of 2D films, but also allows a precise control over thickness and doping. X-ray diffraction and scanning transmission electron microscopy (STEM) reveal the formation of high-quality epitaxial films of pristine and Ni-doped FGT on graphene via van der Waals (vdW) epitaxy. Integrated differential phase contrast STEM images further provide in-depth information on Ni substitution and intercalation into the vdW gaps. Ni incorporation in doped films results in the shrinking of both in-plane and out-of-plane lattice parameters. Superconducting Quantum Interference Device, Hall, and X-ray magnetic circular dichroism measurements were utilized to probe the ferromagnetic properties of the films. Due to both Ni substitution and intercalation into the vdW gaps for Ni-doped FGT films, we observed a suppression of PMA and a drastic reduction in the Curie temperature down to 50 K. Our density functional theory based calculations of structural and magnetic properties further supports and provide deep insights into the variations of magnetic exchange interaction parameters and atom-projected magnetocrystalline anisotropy energies due to Ni doping to understand the experimental observations.

cond-mat.mtrl-sci↗

arXiv2026

Defect Landscape Engineering Suppresses Helium Damage in Ceramics

Helium accumulation in structural ceramics used in nuclear, fusion, and aerospace systems causes swelling, cracking, and early failure, yet controlling this damage has remained elusive. Here, we introduce defect landscape engineering, the deliberate creation of vacancy clusters prior to helium exposure, as a general strategy to suppress helium-induced degradation. Using {\alpha}-SiC as a model, we combine advanced microscopy, strain mapping, helium depth profiling, positron annihilation spectroscopy, and atomistic simulations to demonstrate that tailored pre-damage transforms helium defect evolution. Instead of forming extended platelets and nanocracks, helium is trapped in stable, uniformly dispersed nanobubbles. Simulations reveal that small vacancy clusters act as dual-function sinks for irradiation-induced interstitials and preferential helium traps, fundamentally altering cascade recombination dynamics. This mechanism is composition-independent and scalable, offering a new design principle for radiation-tolerant ceramics across carbides, nitrides, and oxides. By viewing defect control as a tunable parameter instead of a fixed material property, this work outlines a possible design route toward enhanced radiation tolerance in ceramics used in extreme environments.

physics.app-ph↗

arXiv2025

Al$_{1-x}$Hf$_{x}$N Thin Films with Enhanced Piezoelectric Responses for GHz Surface Acoustic Wave Devices

Ternary compounds obtained by alloying wurtzite AlN with transition metals have emerged as promising materials with significantly enhanced piezoelectric characteristics relative to binary AlN. The increased electromechanical coupling in these compounds boosts the performance of high-frequency acoustic devices. So far, progress has largely focused on Al$_{1-x}$Sc$_x$N, which is costly and poorly compatible with complementary metal-oxide-semiconductor (CMOS) technologies. Here, we investigate aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) as a scalable and potentially CMOS-compatible alternative to Al$_{1-x}$Sc$_x$N. Using reactive co-sputtering on both Si and sapphire substrates, we demonstrate wurtzite Al$_{1-x}$Hf$_{x}$N thin films ($x \leq 0.17$) with strong $c$-axis texture and nearly isotropic lattice expansion upon Hf incorporation. X-ray absorption spectroscopy indicates cross-gap hybridization between N 2$p$ and Hf 5$d$ states, which can enhance the Born effective charge and, thereby, the piezoelectric response. Correspondingly, we observe a nearly two-fold enhancement in the piezoelectric coefficient, $d_{33}$, relative to AlN, despite increasing structural disorder in Al$_{1-x}$Hf$_{x}$N. Building on this finding, we demonstrate Al$_{1-x}$Hf$_{x}$N GHz surface acoustic wave (SAW) resonators that exhibit enhanced performance, as well as efficient excitation of bulk acoustic waves with low propagation losses. These results establish Al$_{1-x}$Hf$_{x}$N as a promising platform for next-generation high-frequency electromechanical devices, with prospects for further piezoelectric enhancements through improved epitaxy.

cond-mat.mtrl-sci↗

arXiv2025

Above-room-temperature ferromagnetism in large-area epitaxial Fe3GaTe2/graphene van der Waals heterostructures

Fe3GaTe2 (FGaT), a two-dimensional (2D) layered ferromagnetic metal, exhibits a high Curie temperature (TC) ~ 360 K along with strong perpendicular magnetic anisotropy (PMA), making it a promising material candidate for next-generation energy-efficient magnetic devices. However, the vast majority of studies on FGaT to date have been limited to millimeter-sized bulk crystals and exfoliated flakes, which are unsuitable for practical applications and integration into device processing. Also, its combination with other 2D materials to form van der Waals heterostructures has only been achieved by flake stacking. Consequently, the controlled large-scale growth of FGaT and related heterostructures remains largely unexplored. In this work, we demonstrate a breakthrough in the high-quality, large-scale growth of epitaxial FGaT thin films on single-crystalline graphene/SiC templates using molecular beam epitaxy. Structural characterization confirms the high crystalline quality of the continuous FGaT/graphene van der Waals heterostructures. Temperature-dependent magnetization and anomalous Hall measurements reveal robust PMA with an enhanced TC well above room temperature, reaching up to 400 K. Furthermore, X-ray absorption and X-ray magnetic circular dichroism spectra provide insight into the spin and orbital magnetic moment contributions, further validating the high TC and robust PMA. These findings are highly significant for the future development of high-performance spintronic devices based on 2D heterostructures, with potential applications in next-generation data storage, logic processing and quantum technologies.

cond-mat.mtrl-sci↗

arXiv2020

High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. Charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s in these films.

cond-mat.mtrl-sci↗

arXiv2017

Road to micron resolution with a color X-ray camera -- polycapillary optics characterization

In a color X-ray camera, spatial resolution is achieved by means of a polycapillary optic conducting X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD matrix. At present, the resolution limit of color X-ray camera systems can go down to several microns and is mainly restricted to pixel dimensions. The recent development of an efficient subpixel resolution algorithm allows a release from pixel size, limiting the resolution only to the quality of the optics. In this work polycapillary properties that influence the spatial resolution are systematized and assessed both theoretically and experimentally. It is demonstrated that with the current technological level reaching one micron resolution is challenging, but possible.

physics.ins-det↗

arXiv2015

Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism

Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic component has been induced and scales up with defect concentration, which can be well accounted for by uncoupled divacancies. However, the ferromagnetic contribution is still weak and only appears in the low fluence range of neutrons or after annealing treatments. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: Defects favor spin polarization at the expense of magnetic interaction. Combining both experimental and first-principles calculation results, the defect-induced ferromagnetism can be understood as a local effect which cannot be scaled up with the volume. Therefore, our investigation answers the long-standing question why the defect-induced ferromagnetic signal is weak.

cond-mat.mtrl-sci↗

arXiv2015

Sub-pixel resolution with color X-ray camera SLcam(R)

The color X-ray camera SLcam(R) is a full-field, single photon detector providing scanning free, energy and spatially resolved X-ray imaging. Spatial resolution is achieved with the use of polycapillary optics guiding X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD. Applying sub-pixel resolution, signals from individual capillary channels can be distinguished. Accordingly the SLcam(R) spatial resolution can be released from pixel size being confined rather to a diameter of individual polycapillary channels. In this work a new approach to sub-pixel resolution algorithm comprising photon events also from the pixel centers is proposed. The details of the employed numerical method and several sub-pixel resolution examples are presented and discussed.

physics.ins-det↗

arXiv2014

Disentangling defect-induced ferromagnetism in SiC

We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradiated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagnetic, and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. We qualitatively explain the magnetic properties as a result of the intrinsic clustering tendency of defects.

cond-mat.mtrl-sci↗

arXiv2014

Structural and magnetic properties of irradiated SiC

We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to the crystallinity of SiC which mutually influences the ferromagnetism in SiC.

cond-mat.mtrl-sci↗

arXiv2013

The resonance triplet at E_alpha = 4.5 MeV in the 40Ca(alpha,gamma)44Ti reaction

The 40Ca(alpha,gamma)44Ti reaction is believed to be the main production channel for the radioactive nuclide 44Ti in core-collapse supernovae. Radiation from decaying 44Ti has been observed so far for two supernova remnants, and a precise knowledge of the 44Ti production rate may help improve supernova models. The 40Ca(alpha,gamma)44Ti astrophysical reaction rate is determined by a number of narrow resonances. Here, the resonance triplet at E_alpha = 4497, 4510, and 4523 keV is studied both by activation, using an underground laboratory for the gamma counting, and by in-beam gamma spectrometry. The target properties are determined by elastic recoil detection analysis and by nuclear reactions. The strengths of the three resonances are determined to omega gamma = (0.92+-0.20), (6.2+-0.5), and (1.32+-0.24) eV, respectively, a factor of two more precise than before. The strengths of this resonance triplet may be used in future works as a point of reference. In addition, the present new data directly affect the astrophysical reaction rate at relatively high temperatures, above 3.5 GK.

nucl-ex↗