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Frederic Boeuf

Publications and source records attributed to Frederic Boeuf.

4 recordsLinked to original sources

Fully integrated quantum frequency processor on a silicon chip

Frequency-bin encoding has recently emerged as a powerful approach for photonic quantum information processing, offering high dimensionality, gate-parallelization, and compatibility with existing telecommunication infrastructure. However, its scalable deployment has so far been hindered by the lack of an integrated platform capable of unifying quantum state generation, coherent frequency mixing, and programmable spectral control.\\ Here, we report the first fully integrated quantum frequency processor, monolithically integrating on the same silicon photonic chip a microresonator-based biphoton quantum frequency comb source, a pump-rejection filter, high-speed phase modulators, and a four-channel, line-by-line pulse shaper. We demonstrate key functionalities, such as tunable frequency beamsplitters with success probabilities exceeding $94\%$ and fidelities above $99.9\%$, as well as the ability to synthesize more general single-qubit gates. Finally, we generate and coherently manipulate high-dimensional frequency-bin entangled states entirely on chip, showcasing control over two-photon quantum walks and performing the first on-chip frequency-bin quantum state tomography of a Bell-state with a fidelity of $95.7(3)\%$. By integrating all key functional elements on the same $4\times7\,\textrm{mm}^2$ chip, with the possibility of scaling to a larger number of modes, our work marks an important step toward large-scale frequency-domain photonic processors for both classical and quantum applications.

quant-ph

Ultrahigh-sensitivity optical power monitor for Si photonic circuits

A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than $10^3$ A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor consisting of an InGaAs ultrathin channel on a Si waveguide working as a gate electrode to increase the responsivity. The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. As a result, our phototransistor achieved the highest responsivity of approximately $10^6$ A/W among the waveguide-coupled phototransistors, allowing us to detect light of 621 fW propagating in the Si waveguide. The high responsivity and the reasonable response time of approximately 100 $\mu$s make our phototransistor promising as an effective optical power monitor in Si photonics circuits.

physics.app-ph

Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.

physics.optics

High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer

A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the weak plasma dispersion effect in Si. Therefore, it is essential to find a novel modulation scheme that is compatible with a Si photonics platform. Here, we demonstrate an InGaAsP/Si hybrid metal-oxide-semiconductor (MOS) optical modulator with a Mach-Zehnder interferometer (MZI) formed by direct wafer bonding with an Al2O3 bonding interface. Electron accumulation at the InGaAsP MOS interface enables the extraction of the electron-induced refractive index change in InGaAsP, which is significantly greater than that in Si. The presented modulator exhibits a phase modulation efficiency of 0.047 Vcm, which is approximately 5 times higher than that of Si MOS optical modulators. This approach provides a new efficient scheme of phase modulation on a Si photonics platform for low-power, high-speed, and high-density optical links.

physics.ins-det