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Frederic Sansoz

Publications and source records attributed to Frederic Sansoz.

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Disordered vs. Short-Range-Ordered Complexions: Consequences for Grain-Boundary-Mediated Plasticity in Nanocrystalline Al-Ni Alloys

Disordered grain-boundary (GB) complexions in thermally stable nanocrystalline alloys are commonly assumed to be structurally uniform, yet their amorphous nature makes them susceptible to local short-range ordering (SRO). The influence of local SRO on GB-mediated plasticity mechanisms in such complexions remains poorly understood. This article employs large-scale Monte Carlo and molecular dynamics simulation to address this gap through simulations of nanocrystalline Al-Ni alloys at two Ni concentrations, 2 at.% and 4 at.%. Annealing at 913 K produces thick uniform disordered intergranular film complexions, while annealing at 378 K produces semi-disordered complexions containing FCC-type and BCC-type SRO. These two complexion states produce fundamentally different mechanical responses. Amorphous complexions act as dislocation sinks, promoting homogeneous plasticity through shear transformation zones, but at the cost of intense shear localization and lower strength. SRO complexions generate reduced shear localization and higher strength but also promote heterogeneous stress concentrations across the GB network, regardless of Ni concentration. This contrast reflects a fundamental shift in governing mechanism, from shear-transformation-zone-controlled behavior in disordered complexion alloys to GB-stress-heterogeneity-controlled behavior in SRO complexion alloys. These findings highlight the potential of complexion engineering to tailor the mechanical properties of nanocrystalline materials.

cond-mat.mtrl-sci

Intrinsic Nanotwin Effect on Thermal Boundary Conductance in Bulk and Single-Nanowire Twinning Superlattices

Coherent twin boundaries form periodic lamellar twinning in a wide variety of semiconductor nanowires, and are often viewed as near-perfect interfaces with reduced phonon and electron scattering behaviors. Such unique characteristics are of practical interest for high-performance thermoelectrics and optoelectronics; however, insufficient understanding of twin-size effects on thermal boundary resistance poses significant limitations for potential applications. Here, using atomistic simulations and ab-initio calculations, we report direct computational observations showing a crossover from diffuse interface scattering to superlattice-like behavior for thermal transport across nanoscale twin boundaries present in prototypical bulk and nanowire Si examples. Intrinsic interface scattering is identified for twin periods larger than or equal to 22.6 nm, but also vanishes below this size to be replaced by ultrahigh Kapitza thermal conductances. Detailed analysis of vibrational modes shows that modeling twin boundaries as atomically-thin 6H-Si layers, rather than phonon scattering interfaces, provides an accurate description of effective cross-plane and in-plane thermal conductivities in twinning superlattices, as a function of the twin period thickness.

cond-mat.mtrl-sci