Frederico Garrido | Searcharxiv

arXiv2026

Structural and Optical Characteristics of $β-Ga_2O_3$ Implanted with Rare Earth Ions

We investigated the structural evolution and optical properties of $β-Ga_2O_3$ crystals implanted with different rare-earth (RE) ions using channeling Rutherford Backscattering Spectrometry, Positron Annihilation, Photoluminescence, and Photoluminescence Excitation spectroscopies. The studies reveal that implantation-induced disorder, accompanying phase transitions, and post-annealing structural recovery are largely insensitive to the implanted RE species. The defect microstructure is also found to be similar for all implanted RE ions. Thermal annealing does not completely remove radiation-induced defects but instead drives their rearrangement into larger defect complexes. Unimplanted (virgin) $β-Ga_2O_3$ exhibits strong UV-visible emission attributed to oxygen vacancies, whereas the introduction of RE ions produces additional emission lines originating from electronic transitions within RE3+ ions. The results indicate that RE3+ ions are excited through the host conduction band, followed by non-radiative relaxation to the 4f excited states and radiative decay to the respective ground states. Fluence-dependent studies of Yb3+ reveal the onset of concentration quenching, while RE-related emission remains efficient even in the presence of substantial lattice disorder. These findings provide new insight into defect evolution in ion-implanted beta-Ga2O3 and clarify the excitation mechanisms of RE3+ ions, offering guidance for optimizing the optical performance of $β-Ga_2O_3$:RE materials.

cond-mat.mtrl-sci↗

arXiv2026

From phase transformation to amorphization: damage accumulation in Yb-implanted $β-Ga_2O_3$

This study provides a comprehensive analysis of the radiation response and structural evolution of differently oriented$β-Ga_2O_3$ single crystals subjected to Yb ion implantation over a wide fluence range from $5 \times 10^{12}$ to $1 \times 10^{16}$~cm$^{-2}$ ($0.04$--$74$~dpa). A multi-technique approach (RBS/c, PAS, HRTEM, and HRXRD) was employed to investigate the mechanisms of damage accumulation. The results reveal a multi-stage process of defect evolution. At a critical threshold of around $0.4$~dpa, the accumulation of lattice strain triggers a phase transformation from monoclinic $β$-Ga$_{2}$O$_{3}$ to a defective spinel structure of $γ$-Ga$_{2}$O$_{3}$. Notably, the formation of this new phase is accompanied by strain relaxation. With further irradiation, defects develop within the crystal structure of $γ$-Ga$_{2}$O$_{3}$. The associated atomic reorganization at this stage is reflected by a distinct dip in the damage accumulation curve and the appearance of stacking faults in the subsurface region of the implanted layer. In contrast to previous reports suggesting high radiation stability of this phase, the present study clearly demonstrates that continuous defect accumulation results in a significant increase in both displaced atoms and vacancy-type defects, with a strong depth dependence in their type and density. Ultimately, at an irradiation level of approximately $7$~dpa, the surface layer amorphizes. With further irradiation, the amorphous layer expands, gradually replacing the transient $γ$-Ga$_{2}$O$_{3}$ phase. These findings reveal that the radiation tolerance of gallium oxide is highly sensitive to ion-specific interactions and strain-induced instabilities, thereby challenging the previously assumed robustness of this material under high-fluence ion irradiation.

cond-mat.mtrl-sci↗