arXiv subjects

Friedhelm Bechstedt

Publications and source records attributed to Friedhelm Bechstedt.

23 records · Page 2Linked to original sources

arXiv2014

Effects of strain on the valence band structure and exciton-polariton energies in ZnO

The uniaxial stress dependence of the band structure and the exciton-polariton transitions in wurtzite ZnO is thoroughly studied using modern first-principles calculations based on the HSE+G0W0 approach, k p modeling using the deformation potential framework, and polarized photoluminescence measurements. The ordering of the valence bands [A(G7), B(G9), C(G7)] is found to be robust even for high uniaxial and biaxial strains. Theoretical results for the uniaxial pressure coefficients and splitting rates of the A, B, and C valence bands and their optical transitions are obtained including the effects of the spin-orbit interaction. The excitonic deformation potentials are derived and the stress rates for hydrostatic pressure are determined based on the results for uniaxial and biaxial stress. In addition, the theory for the stress dependence of the exchange interaction and longitudinal-transversal splitting of the exciton-polaritons is developed using the basic exciton functions of the quasi-cubic approximation and taking the interaction between all exciton states into account. It is shown that the consideration of these effects is crucial for an accurate description of the stress dependence of the optical spectra in ZnO. The theoretical results are compared to polarized photoluminescence measurements of different ZnO substrates as function of uniaxial pressure and experimental values reported in the literature demonstrating an excellent agreement with the computed pressure coefficients.

cond-mat.mtrl-sci↗

arXiv2013

Electronic and optical properties of Cadmium fluoride: the role of many-body effects

Electronic excitations and optical spectra of $CdF_{2}$ are calculated up to ultraviolet employing state-of-the-art techniques based on density functional theory and many-body perturbation theory. The GW scheme proposed by Hedin has been used for the electronic self-energy to calculate single-particle excitation properties as energy bands and densities of states. For optical properties many-body effects, treated within the Bethe-Salpeter equation framework, turn out to be crucial. A bound exciton located about 1 eV below the quasiparticle gap is predicted. Within the present scheme the optical absorption spectra and other optical functions show an excellent agreement with experimental data. Moreover, we tested different schemes to obtain the best agreement with experimental data. Among the several schemes, we suggest a self-consistent quasiparticle energy scheme.

cond-mat.mtrl-sci↗

arXiv2012

Direct experimental determination of the spontaneous polarization of GaN

We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing micro-photoluminescence and cathodoluminescence spectroscopy, we observe emission lines from the intrinsic and extrinsic stacking faults in strain-free GaN micro-crystals. By treating the polarization sheet charges associated with these stacking faults as a plate capacitor, Psp can be obtained from the observed transition energies with no additional assumptions. Self-consistent Poisson-Schroedinger calculations, aided by the microscopic electrostatic potential computed using density-functional theory, lead to nearly identical values for Psp. Our recommended value for Psp of GaN is -0.022+/-0.007 C/m^{2}.

cond-mat.mtrl-sci↗

arXiv2012

Electronic bands of III-V semiconductor polytypes and their alignment

The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme, the LDA-1/2 method. The results are used to derive band offsets $ΔE_c$ and $ΔE_v$ for the conduction and valence bands between two polytypes. The alignment of the band structures is based on the branch-point energy $E_{\rm BP}$ for each polytype. The aligned electronic structures are used to explain properties of heterocrystalline but homomaterial junctions. The gaps and offsets allow to discuss spectroscopic results obtained recently for such junctions in III-V nanowires.

cond-mat.mtrl-sci↗

arXiv2012

Beyond the GW approximation: combining correlation channels

In many-body perturbation theory (MBPT) the self-energy Σ=iGWΓplays the key role since it contains all the many body effects of the system. The exact self-energy is not known; as first approximation one can set the vertex function Γto unity which leads to the GW approximation. The latter properly describes the high-density regime, where screening is important; in the low-density regime, instead, other approximations are proposed, such as the T matrix, which describes multiple scattering between two particles. Here we combine the two approaches. Starting from the fundamental equations of MBPT we show how one can derive the T-matrix approximation to the self-energy in a common framework with GW. This allows us to elucidate several aspects of this formulation, including the origin of, and link between, the electron-hole and the particle-particle T matrix, the derivation of a screened T matrix, and the conversion of the T matrix into a vertex correction. The exactly solvable Hubbard molecule is used for illustration.

cond-mat.str-el↗