arXiv subjects

Fucai Liu

Publications and source records attributed to Fucai Liu.

14 recordsLinked to original sources

arXiv2026

Coherent terahertz magnon-phonon three-wave mixing in a layered antiferromagnet

The coherent nonlinear dynamics between collective excitations, such as magnons and phonons, drive emergent phenomena in quantum materials, yet their direct observation remains a central challenge. Here, using double-terahertz-pump optical-probe spectroscopy, we report the direct observation of coherent magnon-phonon three-wave mixing in the layered antiferromagnetic insulator FePS$_{3}$. We resolve both second- and third-order nonlinear responses of antiferromagnetic magnons and identify a suite of nonlinear couplings in two-dimensional (2D) coherent spectra, including definitive sum- and difference-frequency generation between magnons and phonons. These results lay the groundwork for exploiting coherent nonlinearities to entangle magnetic and vibrational excitations, opening avenues for quantum control and hybrid quantum technologies in the terahertz regime.

cond-mat.mtrl-sci↗

arXiv2026

Resonant-enhanced tunneling electroresistance in sliding ferroelectric tunnel junctions

The escalating demand for memory scaling requires switching mechanisms that remain reliable at atomic thickness while operating with minimal energy consumption. Sliding ferroelectricity provides a promising platform for this challenge: the spontaneous interfacial polarization emerging at superlubric, atomically thin van der Waals interfaces endows exceptional fatigue resistance, ultrafast switching and ultralow coercive fields. Nevertheless, the intrinsically weak polarization of sliding ferroelectrics limits the available signal window, necessitating new physical mechanisms that can transduce subtle polarization variations into pronounced resistance contrasts. Here, we address this challenge by introducing momentum-conserving resonant tunneling between lattice-aligned graphene electrodes. The resulting resonant sliding ferroelectric tunnel junction achieves a tunneling electroresistance (TER) ratio of up to 225.65%, substantially exceeding that of conventional sliding ferroelectric tunnel junctions. In addition, the device delivers a tunable TER ratio, multistate programmability, high current density, robust endurance with a small coefficient of variation (<0.69%), fast switching (20 ns), low switching energy (310 fJ), and low read voltage (<0.2 V). Collectively, these results establish a unique role for sliding ferroelectricity in bridging the gap of memory technology between performance and miniaturization, and open a new pathway toward next-generation nonvolatile memory technologies.

cond-mat.mes-hall↗

arXiv2025

Superlubric Motion of Wave-like Domain Walls in Sliding Ferroelectrics

Sliding ferroelectrics constructed from stacked nonpolar monolayers enable out-of-plane polarization in two dimensions with exceptional properties, including ultrafast switching speeds and fatigue-free behavior. However, the widely accepted switching mechanism, which posits synchronized long-distance in-plane translation of entire atomic layers driven by an out-of-plane electric field, has shown inconsistencies with experimental observations. We demonstrate that this spinodal decomposition-like homogeneous switching process violates Neumann's principle and is unlikely to occur due to symmetry constraint. Instead, symmetry-breaking domain walls (DWs) and the tensorial nature of Born effective charges are critical for polarization reversal, underscoring the quantum nature of sliding ferroelectrics. Using the Bernal-stacked $h$-BN bilayer as a model system, we discover that the coherent propagation of wide, wave-like domain walls is the key mechanism for ferroelectric switching. This mechanism fundamentally differs from the layer-by-layer switching associated with narrow domain walls, which has been established for over sixty years in perovskite ferroelectrics. Moreover, these wave-like DWs exhibit superlubric dynamics, achieving ultrahigh velocities of approximately 4000 m/s at room temperature and displaying an anomalous cooling-promoted switching speed. The unexpected emergence of DW superlubricity in sliding ferroelectrics presents new avenues for enhancing key performance metrics and offers exciting opportunities for applications in cryogenic environments.

cond-mat.mtrl-sci↗

arXiv2023

Chirality selective magnon-phonon hybridization and magnon-induced chiral phonons in a layered zigzag antiferromagnet

Two-dimensional (2D) magnetic systems possess versatile magnetic order and can host tunable magnons carrying spin angular momenta. Recent advances show angular momentum can also be carried by lattice vibrations in the form of chiral phonons. However, the interplay between magnons and chiral phonons as well as the details of chiral phonon formation in a magnetic system are yet to be explored. Here, we report the observation of magnon-induced chiral phonons and chirality selective magnon-phonon hybridization in a layered zigzag antiferromagnet (AFM) FePSe$_3$. With a combination of magneto-infrared and magneto-Raman spectroscopy, we observe chiral magnon polarons (chiMP), the new hybridized quasiparticles, at zero magnetic field. The hybridization gap reaches 0.25~meV and survives down to the quadrilayer limit. Via first principle calculations, we uncover a coherent coupling between AFM magnons and chiral phonons with parallel angular momenta, which arises from the underlying phonon and space group symmetries. This coupling lifts the chiral phonon degeneracy and gives rise to an unusual Raman circular polarization of the chiMP branches. The observation of coherent chiral spin-lattice excitations at zero magnetic field paves the way for angular momentum-based hybrid phononic and magnonic devices.

cond-mat.mtrl-sci↗

arXiv2023

Unconventional ferroelectric domain switching dynamics in CuInP2S6 from first principles

The switching dynamics of ferroelectric materials is a crucial intrinsic property which directly affects the operation and performance of ferroelectric devices. In conventional ferroelectric materials, the typical ferroelectric switching mechanism is governed by a universal process of domain wall motion. However, recent experiments indicate that Van der Waals ferroelectric CuInP2S6 possesses anomalous polarization switching dynamics under an electric field. It is important to understand the switching dynamics, but it remains theoretically unexplored in CuInP2S6 due to the lack of description of its order-disorder phase transition characteristics by density functional theory. Here, we employ a machine-learning potential trained from the first principles density functional theory dataset to conduct the large-scale atomistic simulations of temperature-driven order-disorder ferroelectric phase transition in CuInP2S6. Most importantly, it is found that the electric field-driven polarization switching in CuInP2S6 is mediated by single Cu dipole flip, rather than conventional domain wall motion mechanism. This intrinsic unconventional switching behavior can be attributed to the competition between the energy barrier of domain wall motion and single dipole flip.

cond-mat.mtrl-sci↗

arXiv2023

Magnetic field filtering of the hinge supercurrent in unconventional metal NiTe$_2$-based Josephson junctions

Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Besides, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a powerful diagnostic approach. Here, we report the observations of conspicuous hinge supercurrent in NiTe$_2$-based JJs. Particularly, applying an in-plane magnetic field along the Josephson current could rapidly suppress the bulk supercurrent and retain the nearly pure hinge supercurrent, namely the magnetic field filtering of supercurrent. Further systematic comparative analysis and theoretical calculations demonstrate the existence of unconventional nature and obstructed hinge states in NiTe$_2$. Our results revealed the unique hinge states in unconventional metal NiTe$_2$, and demonstrated in-plane magnetic field as an efficient method to filter out the futile bulk contributions and thereby to highlight the hinge states hidden in topological/unconventional materials.

cond-mat.mes-hall↗

arXiv2023

Inverse-current quantum electro-oscillations in a charge-density wave insulator

Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I and TaS$_3$ nanowires. Such oscillations manifest in the nearly infinite Fr\"ohlich conductivity region where the undamped CDW flow forms in a finite electric current, and finally disappear after the oscillation index n reaches 1. A systematic investigation on the effect of temperature and magnetic field establishes that the observed electro-oscillations are a coherent quantum phenomenon. We discuss the possibilities of the physical mechanisms, including the formation of sliding-driven inherent Floquet sidebands. Our results introduce a new member in the family of quantum oscillations, and shed light on plausible avenues to explore novel physics and potential applications of coherent density-wave condensates.

cond-mat.mes-hall↗

arXiv2022

Sliding induced multiple polarization states in two-dimensional ferroelectrics

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer 3R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles that layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices.

cond-mat.mtrl-sci↗

arXiv2019

Natural van der Waals heterostructural single crystals with both magnetic and topological properties

Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

cond-mat.mtrl-sci↗

arXiv2017

Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar cells, photo-detectors, light-emitting diodes and photo-transistors, capacitive energy storage, photodynamic cancer therapy and sensing on flexible platforms. While light-induced luminescence has been widely studied, luminescence induced by injection of free electrons could promise another important applications of these new materials. However, cathodoluminescence is inefficient due to the low cross-section of the electron-hole creating process in the monolayers. Here for the first time we show that cathodoluminescence of monolayer chalcogenide semiconductors can be evidently observed in a van der Waals heterostructure when the monolayer semiconductor is sandwiched between layers of hexagonal boron nitride (hBN) with higher energy gap. The emission intensity shows a strong dependence on the thicknesses of surrounding layers and the enhancement factor is more than 1000 folds. Strain-induced exciton peak shift in the suspended heterostructure is also investigated by the cathodoluminescence spectroscopy. Our results demonstrate that MoS2, WS2 and WSe2 could be promising cathodoluminescent materials for applications in single-photon emitters, high-energy particle detectors, transmission electron microscope displays, surface-conduction electron-emitter and field emission display technologies.

cond-mat.mes-hall↗

arXiv2017

Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam

In this work, we present a method for targeted, maskless, and scalable fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide (SiC) using focused ion beam. The resolution of implanted VSi defects is limited to a few tens of nanometers, defined by the diameter of the ion beam. Firstly, we studied the photoluminescence (PL) spectrum and optically detected magnetic resonance (ODMR) of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects and our measurements indicate the presence of a photostable single photon source. Finally, we find that the Si++ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.

quant-ph↗

arXiv2017

Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2

Atomically thin transition metal dichalcogenides (TMDs) possess coupling of spin and valley degrees of freedom, making them promising for spin-valleytronics. ln monolayer TMDs, the emission helicity is locked to the valleys as a consequence of spin-orbit coupling and inversion symmetry breaking, leading to a valley analog of Zeeman effect in presence of out-of-plane magnetic field. As inversion symmetry is recovered in bilayers, the emission helicity should no longer be locked to the valleys. Here we show that Zeeman splitting, however, still persists in bilayers, as a result of an additional degree of freedom viz., the layer pseudospin and spin-valley-layer locking. In contrast to monolayer, Zeeman splitting here exists without lifting valley degeneracy. The degree of circularly polarized photoluminescence can be tuned with magnetic field from $-27\%$ to $27\%$. Our results demonstrate the control of degree of freedom in bilayer with magnetic field, which, together with previous electric field control, makes bilayer a promising platform for spin-valley quantum gates based on magnetoelectric effects.

cond-mat.mtrl-sci↗

arXiv2016

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diamond which is widely used for holding Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale, high-quality and low cost growth, as well as advanced fabrication technique in optoelectronics, leading to the prospects for large scale quantum engineering. In this paper, we report experimental demonstration of the generation of nanoscale $V_{Si}$ single defect array through ion implantation without the need of annealing. $V_{Si}$ defects are generated in pre-determined locations with resolution of tens of nanometers. This can help in integrating $V_{Si}$ defects with the photonic structures which, in turn, can improve the emission and collection efficiency of $V_{Si}$ defects when it is used in spin photonic quantum network. On the other hand, the defects are shallow and they are generated $\sim 40nm$ below the surface which can serve as critical resources in quantum sensing application.

quant-ph↗

arXiv2016

Large-area and high-quality 2D transition metal telluride

Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 μm. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices.

cond-mat.mtrl-sci↗