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Fulvio Paleari

Publications and source records attributed to Fulvio Paleari.

At least 19 recordsLinked to original sources

Ab initio study of saddle-point excitons in monolayer SnS2

Monolayer SnS2 has emerged as a promising visible-light photocatalyst for photoelectrochemical applications, owing to its strong optical absorption in the visible range and excellent chemical stability. Despite its reduced dimensionality - where excitonic effects are expected to be pronounced - comprehensive theoretical investigations of bound excitons in this material remain scarce. Notably, unlike most two-dimensional hexagonal crystals, monolayer SnS2 exhibits its lowest single-particle transition at the M point of the Brillouin zone (BZ). Here, the electronic valence bands form a saddle point while conduction states display a minimum with pronounced anisotropy, creating a distinctive band topology whose impact on optical excitations has not yet been systematically explored. In this work, we present a first-principles study of bound excitons in monolayer SnS2 based on state-of-the-art many-body perturbation theory, employing the GW approximation and the Bethe-Salpeter equation (BSE). We analyze how band symmetry and anisotropy shape the excitonic wavefunctions and transition dipole moments. By resolving the exciton dipoles in momentum space for different linear light polarizations, we demonstrate that linearly polarized light lifts the C3 rotational symmetry relating the three inequivalent M points, giving rise to three linearly independent excitonic states. This polarization-selective coupling, previously identified for saddle points in graphene, is achieved in SnS2 for bound excitons and provides a potential route toward state encoding schemes in valleytronics applications.

cond-mat.mes-hall

Phonon assisted light absorption and emission in cubic-Boron Nitride

Cubic boron nitride (cBN) is a wide-bandgap polymorph of boron nitride whose optical response remains only partially understood due to the coexistence of indirect electronic transitions and strong exciton-phonon coupling. Using first-principles many-body perturbation theory, we investigate the optical properties of cBN by combining GW quasiparticle corrections with Bethe-Salpeter equation calculations of excitonic effects. Phonon-assisted absorption and emission processes are explicitly included through the exciton-phonon coupling formalism. We find that phonon-mediated optical transitions provide a dominant contribution to both absorption and luminescence spectra, partially reconciling the discrepancy between the theoretical optical gap ($\simeq$ 11 eV) and experimental emission around 6-7 eV. Our results demonstrate the importance of including exciton-phonon interactions for the correct interpretation of experimental spectra, offering new insights into light emission in wide-bandgap materials.

cond-mat.mtrl-sci

Excitonic Landscape of Monolayer Transition-Metal Dichalcogenides: Experimental Discrepancies, Theoretical Advances, and Strain Dependence

Excitons in monolayer transition-metal dichalcogenides (TMDs) have garnered significant attention because of their large binding energies due to weakly screened Coulomb interaction, and direct bandgap at the K/K$^\prime$ point in the hexagonal Brillouin zone featuring spin-polarised bands due to spin-orbit coupling and lack of inversion symmetry. This makes them prospective for next-generation optoelectronic and quantum devices. However, despite the intense research activity, the reported values for exciton binding energies, quasiparticle gaps, and spectral features exhibit substantial variation across both experimental and theoretical studies. In this article, we present a comprehensive and critical assessment of the current understanding of excitonic properties in single-layer TMDs, integrating results from the angle-resolved photoemission spectroscopy (ARPES), photoluminescence (PL) measurements, and other experimental techniques with first-principles theoretical insights. Special emphasis is placed on the comparison and reconciliation of discrepancies observed across different experimental setups and sample qualities. Furthermore, we highlight our state-of-the-art GW-BSE calculations, which include both equilibrium and laterally strained systems, to systematically analyse the behaviour of direct and indirect excitons. By evaluating the effect of strain as a tunable control variable, we demonstrate its potential to engineer excitonic properties, supported by cross-validation against prior theoretical predictions and experimental findings. In doing so, we clarify the sources of discrepancies in the literature and offer a unified perspective on excited-state engineering strategies in two-dimensional TMDs.

physics.optics

Symmetries of excitons

Excitons, bound electron-hole pairs, are responsible for strong optical resonances near the bandgap in low-dimensional materials and wide-bandgap insulators. Although current ab initio methods can accurately determine exciton energies and eigenstates, their symmetries have been much less explored. In this work, we employ standard group-theory methods to analyse the transformation properties of excitonic states, obtained by solving the BSE, under crystal symmetry operations. We develop an approach to assign irreducible-representation labels to excitonic states, providing a state-of-the-art framework for analysing their symmetries and selection rules (including, for example, the case of exciton-phonon coupling). Complementary to the symmetry classification, we introduce the concept of total crystal angular momentum for excitons in the presence of rotational symmetries, allowing the derivation of conservation laws. Furthermore, we demonstrate how these symmetry properties can be exploited to greatly enhance the computational efficiency of exciton calculations with the BSE. We apply our methodology to three prototypical systems to understand the role of symmetries in different contexts: (i) For LiF, we present the symmetry analysis of the entire excitonic dispersion and examine the selection rules for optical absorption. (ii) In the calculation of resonant Raman spectra of monolayer MoSe2, we demonstrate how the conservation of total crystal angular momentum governs exciton-phonon interactions, leading to the observed resonant enhancement. (iii) In bulk hBN, we analyze the role of symmetries for the coupling of finite-momentum excitons to finite-momentum phonons and their manifestation in the phonon-assisted luminescence spectra. This work establishes a general and robust framework for understanding the symmetry properties of excitons in crystals, providing a foundation for future studies.

cond-mat.mes-hall

State- and momentum-dependent nonlinear Stark effect of interlayer excitons in bilayer WSe$_2$

Interlayer excitons in van der Waals heterostructures offer rich collective phases, prospective optoelectronic applications, and versatile tunability, where control by electronic means is particularly relevant and practical. Here, in the case of bilayer WSe$_2$, we reveal how layer localization of excitons governs their response to an external electric field. Using Many-Body Perturbation Theory, we calculate the exciton dispersion for different stacking symmetries under applied electric field and/or strain, in order to map the landscape of competing low-energy excitons in four distinct finite-momentum valleys. While intralayer excitons are not affected by the electric field, some interlayer ones exhibit a nonlinear Stark shift that becomes linear after a critical threshold. The degree of nonlinearity is a direct measure of the layer hybridization of the electronic subcomponents of the exciton. Our findings explain the peculiar Stark-shift regimes observed in recent experiments, the nature of (anti)symmetric spectral shifts around zero field, and the sensitivity of dipolar excitons to external perturbations, all highly relevant to their further applications in excitonic condensates, optoelectronics devices and quantum emitters.

cond-mat.mes-hall

Overscreening-free electron-phonon interaction in realistic materials

State-of-the-art model Hamiltonians, like Fröhlich's, or density functional theory approaches to electron-phonon interaction suffer from a severe overscreening error. This is due to the incorrect treatment of the screening of the ionic potential. We derive a correct formulation of the electron-phonon interaction and demonstrate its validity by numerically implementing the new scheme in a paradigmatic material: MgB$_2$, a system whose double-gap, low-$T_c$ superconductivity depends on exceptionally high phonon linewidths. We find that the present treatment enhances the linewidths by $57 \%$ with respect to what has been previously reported for the anomalous $E_{2g}$ mode. We further discover that the $A_{2u}$ mode is also anomalous (its strong coupling being completely quenched by the overscreened expression). Our results deeply question methods based on state-of-the-art approaches and impact a wide range of fields such as thermal conductivity, phononic instabilities and non-equilibrium lattice dynamics.

cond-mat.mtrl-sci

Electron--phonon interaction without overscreening: a strategy for first--principles modelling

State-of-the-art approaches to calculate the electron-phonon and the phonon-electron self-energy are based on a mean-field approximation for the interacting electronic system. This approach introduces an overscreening error which results in an underestimation of the electron-phonon coupling strength. We introduce a theoretical and numerical approach for the calculation of the phonon-electron self-energy without the overscreening error. Starting from the out-of-equilibrium Kadanoff-Baym equations for the phonon propagator, we discuss and compare the overscreened (i.e., symmetrically screened) and overscreening--free (i.e., asymmetrically screened) cases. We point out that the difficulty in treating the latter stems from the static approximation to the dielectric function and from the need to obtain a self-energy that preserves the elementary scattering processes. We solve both problems in the equilibrium case by considering a manifestly symmetric form of the correct self-energy which can be easily calculated numerically and yields an overscreening--free coupling strength. Finally, we describe the numerical implementation of this treatment into the first--principles Yambo code for the calculations of phonon linewidths.

cond-mat.mtrl-sci

Physics of excitons in layered BiI$_{3}$. Effects of dimensionality and crystal anisotropy

We carry out a detailed theoretical study of the electronic and optical properties of bulk and monolayer bismuth triiodide (BiI$_{3}$), a layered metal halide, using the ab initio GW+BSE scheme with a full spinorial formulation. We discuss in detail the effects due to the change of dimensionality and the role of spin-orbit coupling. Moreover, we compute the exciton dispersion by solving the BSE at finite momentum, also analysing transverse (TE) and longitudinal (LE) excitons, and the L-T splitting at $\bf{q}\approxΓ$. The results provide a reference for future experimental measurements. In addition, the interplay between spin-orbit coupling and large binding energy, together with the role of quantum confinement, confirm that BiI$_{3}$ is an interesting material for opto-electronic applications and show that it is a good candidate for the study of exciton dynamics.

cond-mat.mtrl-sci

Distinguishing different stackings in layered materials via luminescence spectroscopy

Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from ``indirect'', finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed.

cond-mat.mtrl-sci

First-principles study of luminescence in hexagonal boron nitride single layer: exciton-phonon coupling and the role of substrate

Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN) present emission spectra that differ from one another, with some suggesting a coexistence between phonon-assisted and direct emission channels. Motivated by these results, we investigated the optical response of (m-hBN) using a new \textit{ab initio} approach that takes into account the effects of atomic vibrations on the luminescence spectra. We construct the dynamical exciton-phonon self-energy, then use it to perturbatively correct the optical response functions and test this approach on bulk hBN as a benchmark. Within our approach we are able to estimate the renormalisation of the direct peak induced by phonon-assisted transitions, and this allows us to accurately describe spectra where both processes are present. We found that the emission signal of m-hBN is strongly dependent on its interaction with the substrate, which changes its nature from direct to indirect material and modifies the screening felt by the electrons. We attribute the m-hBN emission signal to the bright direct excitons and consider the likelihood of phonon replicas appearing.

cond-mat.mtrl-sci

Quenching of low-energy optical absorption in bilayer C$_3$N polytypes

In this work we provide a first principles description of the electronic and optical properties of bilayers C$_3$N, with different stacking motifs AB, AB$'$ and AA$'$. Starting from quasi-particle electronic band-structures, we solve the Bethe Salpeter Equation (BSE) to access the excitonic properties of these bilayers. For all stacking sequences, we see strong optical absorption at energies lower than but close to that of the monolayer. Most relevant, we predict a strong quenching of the low-energy optical absorption, with negligible oscillator strength of low-lying bound excitons. This is a unique phenomenology that does not arise in the monolayer case, nor in other common homo-bilayers. We explain these findings in terms of the small interband dipole matrix elements associated to the valence-conduction transitions involved in these excitons, and discuss them in view of the different stacking motifs.

cond-mat.mtrl-sci

Intrinsic control of interlayer exciton generation rate in van der Waals materials via Janus layers

We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation efficiency. We investigate different MoS$_2$@Janus layer combinations using first-principles methods including electron-hole interactions (excitons) and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between interlayer exciton states -- which usually have a very low oscillator strength and hence are almost dark in absorption -- and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS$_2$@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient electron-hole pair generation with efficient charge carrier separation.

cond-mat.mes-hall

Surface termination dependence of electronic and optical properties in Ti$_2$CO$_2$ MXene monolayers

Two-dimensional (2D) MXenes are a rapid growing family of 2D materials with rich physical and chemical properties where their surface termination plays an essential role. Among the various 2D MXenes, functionalization of the Ti$_{n}$C$_{n-1}$ phase with oxygen (O) atoms makes them attractive for optoelectronic applications due to their optical gap residing in the infrared or visible region. In this manuscript, we theoretically investigate the electronic and optical properties of four different O-atom-functionalized Ti$_{n}$C$_{n-1}$ MXene monolayers using state-of-the-art, first-principles techniques. In particular, we calculate the quasiparticle corrections on top of density functional theory (DFT) at the GW level and the exciton-dominated optical spectra by solving the Bethe-Salpeter equation (BSE) also at finite momentum. We find that all but one of the monolayer models are indirect band gap semiconductors where quasiparticle corrections are very important ($\sim 1$ eV). The optical spectra are instead dominated by direct and indirect excitons with large binding energies (between $0.5$ and $1$ eV). Most direct excitons lie above $1.5$ eV, while the indirect ones are below: therefore, we conclude that Ti$_{n}$C$_{n-1}$ should display strong absorption in the visible region, but phonon-assisted emission in the infrared. Our work thus reveals the potential usage of surface terminations to tune the optical and electronic properties of Ti$_{n}$C$_{n-1}$ MXene monolayers, while emphasizing the pivotal role of many-body effects beyond DFT to obtain accurate prediction for these systems.

cond-mat.mtrl-sci

Exciton-phonon interaction calls for a revision of the "exciton" concept

The concept of \textit{optical} exciton - a photo-excited bound electron-hole pair within a crystal - is routinely used to interpret and model a wealth of excited-state phenomena in semiconductors. Beside originating sub-band gap signatures in optical spectra, optical excitons have also been predicted to condensate, diffuse, recombine, relax. However, all these phenomena are rooted on a theoretical definition of the excitonic state based on the following simple picture: "excitons" are actual particles that both appear as peaks in the linear absorption spectrum and also behave as well-defined quasiparticles. In this paper we show, instead, that the electron-phonon interaction decomposes the initial optical excitons into \textit{elemental} excitons, the latter being a different kind of bound electron-hole pairs lacking the effect caused by the induced, classical, electric field. This is demonstrated within a many-body perturbation theory approach starting from the interacting electronic Hamiltonian including both electron-phonon and electron-hole interactions. We then apply the results on two realistic systems, monolayer MoS$_2$ (where the lowest-bound exciton is optically inactive) and monolayer MoSe$_2$ (where it is optically active), using first-principles methods to compute the exciton-phonon coupling matrix elements. Among the consequences of optical-elemental decomposition, we point to a homogeneous broadening of absorption peaks occurring even for the lowest-bound optical exciton, we demonstrate this by computing exciton-phonon transition rates. More generally, our findings suggest that the optical excitons gradually lose their initial structure and evolve as elemental excitons. These states can be regarded as the real intrinsic excitations of the interacting system, the ones that survive when the external perturbation and the induced electric fields have vanished.

cond-mat.mtrl-sci

Excitons under strain: light absorption and emission in strained hexagonal boron nitride

Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviolet. This luminescence originates from bound excitons recombination assisted by different phonon modes. The coupling between excitons and phonons is so strong that the resulting light emission is as efficient as the one of direct band gap materials. In this manuscript we investigate how uniaxial strain modifies the electronic and optical properties of this material, and in particular how it affects the exciton-phonon coupling. Using a formulation of this coupling based on finite-difference displacements, recently developed by some of us, we investigate how phonon-assisted transitions change under strain. Our results open the way to the study of phonon-assisted luminescence in strained materials from first principles. Our findings are important both for experiments that directly probe \hbn under strain or for those in which it is used as substrate for other 2D material with a lattice mismatch.

cond-mat.mtrl-sci

Radiative lifetime of free excitons in hexagonal boron nitride

Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.

cond-mat.mtrl-sci

Exciton-phonon coupling in the UV absorption and emission spectra of bulk hexagonal boron nitride

We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its strong luminescence in the UV range. We first analyse the excitons at the wave vector $\overline{q}$ of the indirect gap. The coupling of these excitons with the various phonon modes at $\overline{q}$ is expressed in terms of a product of the mean square displacement of the atoms and the second derivative of the optical response function with respect to atomic displacement along the phonon eigenvectors. The derivatives are calculated numerically with a finite difference scheme in a supercell commensurate with $\overline{q}$. We use detailed balance arguments to obtain the intensity ratio between emission and absorption processes. Our results explain recent luminescence experiments and reveal the exciton-phonon coupling channels responsible for the emission lines.

cond-mat.mtrl-sci

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are carried out on the level of \textit{ab initio} many-body perturbation theory (GW and Bethe Salpeter equation) and by means of an appropriate tight-binding model. We confirm the change from direct to indirect electronic gap when going from single layer to bulk systems and we give a detailed account of its origin by comparing the effect of different stacking sequences. We emphasize that the inclusion of the electron-hole interaction is crucial for the correct description of the momentum-dependent dispersion of the excitations. It flattens the exciton dispersion with respect to the one obtained from the dispersion of excitations in the independent-particle picture. In the AB stacking this effect is particularly important as the lowest-lying exciton is predicted to be direct despite the indirect electronic band gap.

cond-mat.mtrl-sci