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Fumin Huang

Publications and source records attributed to Fumin Huang.

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Mid-infrared Assisted THz Phonon Amplification in a 2D Semiconductor for Room Temperature Detection

Efficient and selective excitation of lattice vibrations is central to controlling energy flow at the nanoscale, yet remains challenging under conventional optical excitation. Here, we introduce a mid-infrared-assisted phonon amplification approach, termed MIRAPA, that enables efficient energy injection directly into vibrational bonds. Using surface-enhanced resonant Raman scattering in few-layer $\mathrm{MoS_2}$, we exploit strong exciton--phonon coupling to monitor phonon populations. When mid-infrared (MIR) light is introduced, it couples directly to out-of-plane lattice vibrations, leading to room-temperature phonon amplification exceeding $80\%$. Crucially, MIRAPA bypasses electronic excitation pathways, allowing the MIR power density to be nearly $300\times$ lower than that required for visible excitation to achieve comparable enhancement. The resulting phonon modulation is robust, persisting over more than $2800$ on/off cycles and exceeding $15$ hours of continuous-wave laser illumination without degradation. Quantitative analysis yields an effective noise-equivalent power of approximately $0.3\,\mathrm{nW}/\sqrt{\mathrm{Hz}}$ for MIR detection, highlighting the sensitivity of the approach. By combining vibrational selectivity, low-power operation, and long-term stability, MIRAPA provides a robust platform for probing and amplifying phonons in two-dimensional semiconductors. These results open new opportunities for nanoscale vibrational sensing, mid-infrared detection, and phonon-based coherent devices, including routes toward phonon lasing.

physics.app-ph

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Gold assisted exfoliation (GAE) is a groundbreaking mechanical exfoliation technique, producing centimeter scale single crystal monolayers of 2D materials. Such large, high quality films offer unparalleled advantages over the micron sized flakes typically produced by conventional exfoliation techniques, significantly accelerating the research and technological advancements in the field of 2D materials. Despite its wide applications, the fundamental mechanism of GAE remains poorly understood. In this study, using MoS2 on Au as a model system, we employ ultralow frequency Raman spectroscopy to elucidate how the interlayer interactions within MoS2 crystals are impacted by the gold substrate. The results reveal that the coupling at the first interface between the adhered layer on the gold substrate and the adjacent layer, is substantially weakened, with the binding force being reduced to nearly zero. This renders the first interface the weakest point in the system, thereby the crystal preferentially cleaves at this junction, generating large area monolayers with sizes comparable to the parent crystal. Biaxial strain in the adhered layer, induced by the gold substrate, is identified as the driving factor for the decoupling effect. We establish the strain-induced decoupling effect as the primary mechanism of GAE, which could also play a significant role in general mechanical exfoliations.

cond-mat.mtrl-sci

Optical properties of Au-Hf thin films

The optical properties of thin films of intermetallic Au$_{3}$Hf were experimentally investigated for the first time, which display clear plasmonic properties in the optical and near infrared region with negative permittivity. In contrast to similar alloys, such as films of Au$_{3}$Zr, the films express more negative $\epsilon'$ values and lower $\epsilon''$ values across most of the wavelengths (370-1570 nm) investigated. The Au$_{3}$Hf films were fabricated by DC magnetron sputtering at a range of deposition temperatures, from room temperature to 415$^{o}$C, and annealed at different vacuum levels. The films mostly formed as a combination of Au$_{3}$Hf, Au$_{2}$Hf and Au$_{4}$Hf phases when deposited below 400$^{o}$C, and exclusively Au$_{3}$Hf phase at above 400$^{o}$C, indicating key conditions for isolating this phase. The films were stable when annealed at 10$^{-8}$ Torr, but when annealed again at 10$^{-6}$ Torr the films oxidised and changed into a mix of Au- Hf phases, suggesting resistance to oxidization may be an issue for un-encapsulated applications at elevated temperatures.

cond-mat.mtrl-sci

Searching for refractory plasmonic materials: the structural and optical properties of Au$_{3}$Zr intermetallic thin films

Optical properties of refractory intermetallic thin films of Au$_{3}$Zr were experimentally investigated for the first time, which show distinctive plasmonic properties in the visible and near infrared region. The films were fabricated through DC magnetron sputtering at various deposition temperature ranging from room temperature to 427$^{o}$C and annealed at different vacuum levels. Both the structural and optical properties are found to be critically dependent on deposition temperature and anneal conditions. Films deposited between 205-320$^{o}$C are shown to exhibit lower negative permittivity and better thermal stability, which could be linked to specific crystalline orientations. The films are stable when annealed at 10$^{-8}$ Torr, but are partially oxidized when annealed at 10$^{-6}$ Torr, suggesting oxidization could be a restricting issue for high-temperature applications in ambient environment.

physics.app-ph

Atomically Thin Boron Nitride as an Ideal Spacer for Metal-Enhanced Fluorescence

The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a subnanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ~95+-5), sensitivity (10^-8 M), reproducibility, and reusability (~90% of the plasmonic activity is retained after 30 cycles of heating at 350 {\deg}C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries.

physics.app-ph

Fingerprints of the Strong Interaction between Monolayer MoS2 and Gold

Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution with the MoS2 thickness. Here, we identify specific vibrational and binding energy fingerprints of such strong interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge-transfer in monolayer MoS2. Near-field tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS2-Au interaction at the nanoscale, reflecting the spatial non-conformity between the two materials. Far-field micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the strong MoS2-Au interaction and provide guidance for strain and charge doping engineering of MoS2.

cond-mat.mtrl-sci

Single-defect Memristor in MoS$_2$ Atomic-layer

Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has added a new dimension of interest owing to the prospects of size scaling and the associated benefits. However, the origin of the switching mechanism in atomic sheets remains uncertain. Here, using monolayer MoS$_2$ as a model system, atomistic imaging and spectroscopy reveal that metal substitution into sulfur vacancy results in a non-volatile change in resistance. The experimental observations are corroborated by computational studies of defect structures and electronic states. These remarkable findings provide an atomistic understanding on the non-volatile switching mechanism and open a new direction in precision defect engineering, down to a single defect, for achieving optimum performance metrics including memory density, switching energy, speed, and reliability using atomic nanomaterials.

cond-mat.mes-hall

Hunting micrometer-sized graphene flakes on gold substrate

Gold is widely used as the substrate material in many graphene devices, due to its superior optoelectronic properties and chemical stability. However, there has been little experimental investigation on the optical contrast of graphene films on Au substrates. Here we report accurate measurement of the optical contrast spectra of few-layer graphene flakes on bulk Au. We used a high-resolution optical microscopy with a 100x magnification objective, accurately determining the thickness of flakes as small as one micrometer in lateral size, which are highly desired in many applications. The results are in excellent agreement with theoretical calculations and confirmed by Raman and AFM measurements. Furthermore, we demonstrate that the optical contrast spectroscopy is sensitive enough to detect the adsorption of a sub-monolayer airborne hydrocarbon molecules, which can reveal whether graphene is con-taminated and opens the opportunity to develop miniaturized and ultrasensitive molecular sensors.

cond-mat.mtrl-sci