arXiv subjects

Fumio Komori

Publications and source records attributed to Fumio Komori.

At least 19 recordsLinked to original sources

arXiv2026

Quasi-One-Dimensional Electronic Nature of Ta4SiTe4 Underlying the Giant Thermoelectric Performance

Ta4SiTe4 is a one-dimensional van der Waals material that exhibits an exceptionally large thermoelectric power factor below room temperature. However, since this material has been available only in the form of acicular microcrystals, experimental exploration of the electronic properties responsible for its giant thermoelectric performance has long been challenging. In this study, we quantitatively evaluated the one-dimensional electronic nature of Ta4SiTe4 by combining micro-spot angle-resolved photoemission spectroscopy and transport measurements on focused-ion-beam-processed samples. The angle-resolved photoemission spectroscopy measurements reveal anisotropic band dispersions along and perpendicular to the crystallographic c axis. Consistently, transport measurements demonstrate that the resistivity perpendicular to the c axis is approximately five times larger than that along the c axis at 200 K. These results provide direct experimental evidence for the quasi-one-dimensional electronic character of Ta4SiTe4, which underlies its giant thermoelectric response reported previously, and offer fundamental insights into the role of electronic dimensionality in enhancing thermoelectric performance.

cond-mat.mtrl-sci↗

arXiv2025

Spatial Control of Charge Doping in n-Type Topological Insulators

Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping hole into n-type topological insulators Bi$_2$X$_3$ (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H$_2$O on Bi$_2$X$_3$ decorated with a small amount of carbon, and its trigger is the irradiation of photon with sufficient energy to excite core-electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time, and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale, and thus paves a promising avenue toward the realization of novel spintronics devices based on topological insulators.

cond-mat.mes-hall↗

arXiv2024

Surface structure of the 3x3-Si phase on Al(111), studied by the multiple usages of positron diffraction and core-level photoemission spectroscopy

The structure of an Al(111)3x3-Si surface was examined by combining data from positron diffraction and core-level photoemission spectroscopy. Analysis of the diffraction rocking curves indicated that the overlayer had a flat honeycomb lattice structure. Simulations of Si core-level spectra calculated via the first-principles indicated that one of the Si atoms in the unit cell was replaced by an Al atom. The surface superstructure was thus a two-dimensional layer of Al-embedded silicene on Al(111).

cond-mat.mtrl-sci↗

arXiv2024

Photoemission angular distribution beyond the single wavevector description of photoelectron final states

We develop a simulation procedure for angle-resolved photoemission spectroscopy (ARPES), where a photoelectron wave function is set to be an outgoing plane wave in a vacuum associated with the emitted photoelectron wave packet. ARPES measurements on the transition metal dichalcogenide $1T$-$\mathrm{Ti}\mathrm{S}_2$ are performed, and our simulations exhibit good agreement with experiments. Analysis of our calculated final state wave functions quantitatively visualizes that they include various waves due to the boundary condition and the uneven crystal potential. These results show that a more detailed investigation of the photoelectron final states is necessary to fully explain the photon-energy- and light-polarization-dependent ARPES spectra.

cond-mat.mtrl-sci↗

arXiv2024

Broken Screw Rotational Symmetry in the Near-Surface Electronic Structure of $AB$-Stacked Crystals

We investigate the electronic structure of $2H$-$\mathrm{Nb}\mathrm{S}_2$ and $h$-$\mathrm{BN}$ by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the $k_z=π/c$ plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We extract from first-principles calculations the near-surface electronic structure probed by ARPES and find that the calculated photoemission spectra from the near-surface region reproduce the gapped ARPES spectra. Our results show that the near-surface electronic structure can be qualitatively different from the bulk one due to partially broken nonsymmorphic symmetries.

cond-mat.mtrl-sci↗

arXiv2024

Optical study on electronic structure of the locally non-centrosymmetric CeRh$_2$As$_2$

The electronic structures of the heavy-fermion superconductor CeRh$_2$As$_2$ with the local inversion symmetry breaking and the reference material LaRh$_2$As$_2$ have been investigated by using experimental optical conductivity ($σ_1(ω)$) spectra and first-principal DFT calculations. In the low-temperature $σ_1(ω)$ spectra of CeRh$_2$As$_2$, a $4f$-conduction electron hybridization and heavy quasiparticles are clearly indicated by a mid-infrared peak and a narrow Drude peak. In LaRh$_2$As$_2$, these features are absent in the $σ_1(ω)$ spectrum, however, it can nicely be reproduced by DFT calculations. For both compounds, the combination between a local inversion symmetry breaking and a large spin-orbit (SO) interaction plays an important role for the electronic structure, however, the SO splitting bands could not be resolved in the $σ_1(ω)$ spectra due to the small SO splitting size.

cond-mat.str-el↗

arXiv2023

Spin-polarized saddle points in the topological surface states of the elemental Bismuth revealed by a pump-probe spin-resolved ARPES

We use a pump-probe, spin-, and angle-resolved photoemission spectroscopy (ARPES) with a 10.7 eV laser accessible up to the Brillouin zone edge, and reveal for the first time the entire band structure, including the unoccupied side, for the elemental bismuth (Bi) with the spin-polarized surface states. Our data identify Bi as in a strong topological insulator phase ($Z_2$=1) against the prediction of most band calculations. We unveil that the unoccupied topological surface states possess spin-polarized saddle points yielding the van Hove singularity, providing an excellent platform for the future development of opto-spintronics.

cond-mat.mtrl-sci↗

arXiv2021

Two-dimensional superconductivity of the Ca-intercalated graphene on SiC: vital role of the interface between monolayer graphene and the substrate

Ca-intercalation has opened a way for superconductivity in graphene on SiC. However, the atomic and electronic structures being critical for superconductivity are still under discussion. We find the essential role of the interface between monolayer graphene and the SiC substrate for superconductivity. In the Ca-intercalation process, at the interface a carbon layer terminating SiC changes to graphene by Ca-termination of SiC (monolayer graphene becomes bilayer) with inducing more carriers than a free-standing model. Then, Ca is intercalated in-between graphene layers, which shows superconductivity with the updated critical temperature ($T_{C}$) of up to 5.7 K. In addition, the relation between $T_{C}$ and the normal-state conductivity is unusual, "dome-shape". These findings are beyond the simple C6CaC6 model in which s-wave BCS superconductivity is theoretically predicted. This work proposes a general picture of the intercalation-induced superconductivity in graphene on SiC, and shed the light on the potential of superconductivity induced by other intercalants.

cond-mat.mes-hall↗

arXiv2021

Structural and electrical characterization of the monolayer Kondo-lattice compound CePt$_6$/Pt(111)

We report the growth process, structure, and electronic states of 1 unit layer (u.l.) of a Ce-Pt intermetallic compound on Pt(111) using scanning tunneling microscopy/spectroscopy (STM/STS) and low-energy electron diffraction. An ordered $(2 \times 2)$ structure was observed in the form of films or nanoislands depending on Ce dose by annealing at around 700 K. A structural model constructed from atomically resolved STM images and quasiparticle interference (QPI) patterns indicates the formation of a new surface compound 1 u.l. CePt$_6$ on Pt(111) terminated by a Pt layer. A lateral lattice constant of the 1 u.l. CePt$_6$ on Pt(111) is expanded from the value of a bulk CePt$_5$ crystal to match the Pt(111) substrate. By measuring d$I$/d$V$ spectra and QPI, we observed an onset energy of the surface state found on Pt(111) above Fermi energy ($E_F$) shifts below $E_F$ on the Pt layer of the 1 u.l. CePt$_6$ due to charge transfer from the underneath CePt$_2$ layer. We discuss a possible two-dimensional coherent Kondo effect with the observed spectra on the 1 u.l. CePt$_6$.

cond-mat.str-el↗

arXiv2021

Formation of graphene nanoribbons on the macrofacets of vicinal 6H-SiC(0001) surfaces

Thermal decomposition of vicinal 6H-SiC(0001) surfaces with off-angles toward the $[1\bar{1}00]$ direction results in the appearance of pairs of (0001) macroterraces and $(1\bar{1}0n)$ macrofacets covered with graphene, as follows. A carpet-like carbon layer grows on the surface, covering both the macroterraces and macrofacets; it forms $(6\sqrt{3} \times 6\sqrt{3})$ buffer layer on the former ones, whereas its partial periodic bonding with the SiC steps on the latter ones generates a pseudo-graphene nanoribbon (pseudo-GNR) array. The nanoribbons have a width of 2 nm and are aligned in the $[1\bar{2}10]$ direction with a spatial periodicity of 3.3 nm. Here, the Raman spectroscopy analysis of the pseudo-GNR array showed the absence of the 2D peak and the polarization dependence of the $G$ and $D$ peaks, which is typical of the armchair edge nanoribbon.

cond-mat.mtrl-sci↗

arXiv2021

Visualization of optical polarization transfer to photoelectron spin vector emitted from the spin-orbit coupled surface state

Similar to light polarization that is selected by a superposition of optical basis, electron spin direction can be controlled through a superposition of spin basis. We investigate such a spin interference occurring in photoemission of the spin-orbit coupled surface state in Bi2Se3 by using spin- and angle-resolved photoemission spectroscopy combined with laser light source (laser-SARPES). Our laser-SARPES with three-dimensional spin detection and tunable laser polarization including elliptical and circular polarization enables us to directly visualize how the direction of the fully-polarized photoelectron spin changes according to the optical phase and orientation of the incident laser polarization. By this advantage of our laser-SARPES, we demonstrate that such optical information can be projected to the three-dimensional spin vector of the photoelectrons. Our results, therefore, present a novel spin-polarized electron source permitting us to optically control the pure spin state pointing to the arbitrary direction.

cond-mat.mtrl-sci↗

arXiv2021

Atomic-layer Rashba-type superconductor protected by dynamic spin-momentum locking

Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit coupling (SOC). While the effect of Zeeman-type SOC on superconductivity has experimentally been shown recently, that of Rashba-type SOC remains elusive. Here we report on convincing evidence for the critical role of the spin-momentum locking on crystalline atomic-layer superconductors on surfaces, for which the presence of the Rashba-type SOC is demonstrated. In-situ electron transport measurements reveal that in-plane upper critical magnetic field is anomalously enhanced, reaching approximately three times the Pauli limit at $T = 0$. Our quantitative analysis clarifies that dynamic spin-momentum locking, a mechanism where spin is forced to flip at every elastic electron scattering, suppresses the Cooper pair-breaking parameter by orders of magnitude and thereby protects superconductivity. The present result provides a new insight into how superconductivity can survive the detrimental effects of strong magnetic fields and exchange interactions.

cond-mat.supr-con↗

arXiv2020

Scaling law for the Rashba-type spin splitting in quantum well films

We use laser-based spin- and angle-resolved photoemission spectroscopy (laser-SARPES) with high-resolution, and experimentally determine, for the first time, the Rashba-parameters of quantum well states (QWSs) systematically changing with the film thickness and the quantum numbers, through the observation of the Ag films grown on an Au(111) substrate. The data are very well reproduced by the theoretical calculations based on the density functional theory. Most importantly, we find a scaling law for the Rashba parameter ($α_{\rm R}$) that the magnitude of $α_{\rm R}$ is scaled by the charge density at the interface and the spin-orbit coupling ratio between the film and the substrate, and it is expressed by a single straight line regardless of the film thickness and the quantum numbers. The new finding not only is crucial to understand the Rashba effect in QWSs but also gives a foundation of film growth engineering to fine-tune the spin splitting in 2D heterostructure systems.

cond-mat.mtrl-sci↗

arXiv2020

Twisted bilayer graphene fabricated by direct bonding in a high vacuum

Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.

cond-mat.mtrl-sci↗

arXiv2019

Fermi level tuning of one-dimensional giant Rashba system on a semiconductor substrate: Bi/GaSb(110)-(2x1)

We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the $\barΓ$ and $\bar{\rm Y}$ points of the surface Brillouin zone, respectively. The Fermi level of the surface electronic state is tuned in situ by element-selective Ar-ion sputtering on the GaSb substrate. The giant Rashba-type spin splitting with switchable metallic/semiconducting character on semiconductor substrate makes this system a promising candidate for future researches in low-dimensional spintronic phenomena.

cond-mat.mes-hall↗

arXiv2018

Computational study of heavy group IV elements (Ge, Sn, Pb) triangular lattice atomic layers on SiC(0001) surface

Group IV heavy elements atomic layers are expected to show an interesting physical properties due to their large spin-orbit coupling (SOC). Using density functional theory (DFT) calculations with/without SOC we investigate the variation of group IV heavy elements overlayers, namely dense triangular lattice atomic layers (TLAL) on the surface of SiC(0001) semiconductor. The possibility of such layers formation and their properties have not been addressed before. Here we show, that these layers may indeed be stable and, owing to peculiar bonding configuration, exhibit robust Dirac-like energy bands originating from $p_x+p_y$ orbitals and localized mostly within the layer, and $p_z$ band localized outside the layer and interacting with SiC substrate. We found that a $T_1$ adsorption site is most favorable for such TLAL structure and this results in an unusual SOC-induced spin polarization of the states around $\bar{K}$ points of Brillouin zone, namely the coexistence of Rashba- and Zeeman-like spin polarization of different states. We explain this phenomena in terms of symmetry of partial electronic density rather than symmetry of atomic structure.

cond-mat.mes-hall↗

arXiv2018

Rashba spin splitting of L-gap surface states on Ag(111) and Cu(111)

Spin-resolved band structures of L-gap surface states on Ag(111) and Cu(111) are investigated by spin- and angle-resolved photoelectron spectroscopy (SARPES) with a vacuum-ultra-violet laser. The observed spin textures of the Ag(111) and Cu(111) surface states agree with that expected by the conventional Rashba effect. The Rashba parameter of the Ag(111) surface state is estimated quantitatively and is 80% of that of Cu(111). The surface-state wave function is found to be predominantly of even mirror-symmetry with negligible odd contribution by SARPES using a linearly polarized light. The results are consistent with our theoretical calculations for the orbital-resolved surface state.

cond-mat.mtrl-sci↗

arXiv2018

Dynamic interface formation in magnetic thin film heterostructures

Magnetic thin film heterostructures have been widely studied for fundamental interests in the emergence of novel phenomena accompanied by the heterointerface formation as well as their promising practical potential. Combining x-ray magnetic circular dichroism with scanning tunneling microscopy, we show for Mn/Fe thin film heterostructures that the interfacial factors dominating electronic and magnetic properties of the entire system dynamically change with the amount of the Mn overlayer. Element specific magnetization curves of the Fe layer exhibit a two-step spin reorientation transition from out-of-plane to in-plane direction with increasing the Mn coverage. Atomic-scale characterizations of structural and electronic properties in combination with the first-principles calculations successfully unravel the roles of the entangled interfacial factors, and clarify the driving forces of the transition. The first step of the transition at a low Mn coverage is dominantly induced by the formation of FeMn disordered alloy at the heterointerface, and the electronic hybridization with interfacial FeMn ordered alloy is dominant as the origin of the second step of the transition at a high Mn coverage.

cond-mat.mtrl-sci↗