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Fumiyuki Ishii

Publications and source records attributed to Fumiyuki Ishii.

At least 19 recordsLinked to original sources

Direct determination of layer anomalous Hall conductivity using uniaxial Wannier functions

We propose a method for computing layer anomalous Hall conductivity (LAHC) in real space by integrating the Fukui-Hatsugai-Suzuki method with hybrid Wannier functions localized along a single axis. To validate the method, we calculated the LAHC of axion-insulating MnBi$_2$Te$_4$ and confirmed the agreement between the sum of LAHC on the surface and the surface AHC previously reported. We further applied the method to antiferromagnetic Mn$_2$Bi$_2$Te$_5$ and examined the dependence on the magnetic structure of LAHC, identifying cases with and without axion insulating behavior. This layer-resolved analysis offers a powerful tool for studying topological transport in complex materials, including heterostructures, and may guide the design of future devices based on the anomalous Hall effect with precise layer control.

cond-mat.mtrl-sci↗

Direct observation of band structure modifications from monolayer WSe2 to Janus WSSe

Janus monolayer transition metal dichalcogenides (TMDs), created by post-growth substitution of the top chalcogen layer, represent a new direction for engineering 2D crystal properties. However, their rapid ambient degradation and the difficulty of obtaining large-area monolayer samples have limited the available experimental probes, leaving their detailed electronic structure near the Fermi level largely unexplored. In this work, by performing micro-focused angle-resolved photoemission spectroscopy (μ-ARPES) on an identical sample transformed from monolayer WSe2 to Janus WSSe via a H2 plasma-assisted chalcogen-exchange method, we reveal the evolution of its electronic band structure. We observe ARPES signature consistent with the Rashba-type spin splitting due to broken horizontal mirror symmetry, and a significant upward shift of the highest valence band at the Γ-point by approximately 160 meV. These direct observations clarify the key electronic modifications that govern the material's properties and provide a pathway for band engineering in Janus TMDs.

cond-mat.mtrl-sci↗

Ab Initio Prediction of Large Thermoelectric Effect in Distorted Heusler Alloy Ti-Fe-Sb Compound

The thermoelectric figure of merit of the Heusler alloy TiFe$_{1.5}$Sb was investigated by first-principles calculations of lattice thermal conductivity. The electronic thermal conductivity, electrical conductivity, and Seebeck coefficient are calculated by semi-classical Boltzmann transport theory. TiFe$_{1.5}$Sb was found to be thermally and dynamically stable, as confirmed by its phonon dispersion. Additionally, the small phonon band gap between acoustic and optical modes enhances phonon scattering, leading to a low lattice thermal conductivity of 0.703 W/mK at 300 K. Our study also reveals that TiFe$_{1.5}$Sb is a non-magnetic semiconductor. Notably, it demonstrates a significant longitudinal thermoelectric effect, with a Seebeck coefficient of 359.4 $μ$V/K at 300 K. The combination of low lattice thermal conductivity and a high Seebeck coefficient results in a high thermoelectric figure of merit (ZT) of 0.88 and 0.91 at 300 K and 500 K, respectively. These findings highlight the considerable potential of TiFe$_{1.5}$Sb as a promising material for thermoelectric device applications.

cond-mat.mtrl-sci↗

Thermoelectric effect in kagome lattice enhanced at van Hove singularities

We have performed first-principles calculations using density functional theory on a kagome lattice model with a chiral spin state, as a representative example demonstrating significant longitudinal and transverse thermoelectric properties. The results revealed that the saddle-point-type van Hove singularity (VHS) enhances thermoelectric effects. The longitudinal thermoelectric conductivity $α_{xx}$ was large at the chemical potentials tuned close to the band at the symmetry points, K (lower band edge), $Γ$ (upper band edge), and M (saddle point), where the VHSs of the density of states (DOS) were at the corresponding band energies. The transverse thermoelectric conductivity $α_{xy}$ was large at the chemical potential of saddle-point-type VHS. A large anomalous Nernst coefficient of about 10 $μ$V/K at 50 K was expected.

cond-mat.mtrl-sci↗

First-principles LCPAO Approach for Insulators under Finite Electric Field

We propose a linear-combination-of-pseudo-atomic-orbitals scheme for a finite electric field method based on the modern theory of polarization. We derive the matrix elements of the effective potential for the field and the corresponding terms of the forces on atoms. In addition, we successfully evaluated the dielectric constants and Born effective charges of typical semiconducting and insulating materials. Our formalism will aid in the study of materials under electric fields.

cond-mat.mtrl-sci↗

First-principles calculation of anomalous Hall and Nernst conductivity by local Berry phase

In this study, we implemented a finite-difference algorithm for computing anomalous Hall and Nernst conductivity. Based on the expression to evaluate the Berry curvature in an insulating system [J. Phys. Soc. Jpn. 74 1674(2005)], we extended the methods to a metallic system. We calculated anomalous Hall conductivity and Nernst conductivity in a two-dimensional ferromagnetic material FeCl$_2$ and three-dimensional ferromagnetic transition metals bcc-Fe, hcp-Co, and fcc-Ni. Our results are comparable to previously reported results computed by Kubo-formula or Wannier representation. To evaluate anomalous Nernst coefficients, the detailed Fermi-energy dependence of the anomalous Hall conductivity is required. Nonetheless, previous methods based on Wannier representation or Kubo-formula have numerical instability due to the ${\boldsymbol k}$-space Dirac monopole. The present method will open an efficient thermoelectric material design based on the high-throughput first-principles screening.

cond-mat.mtrl-sci↗

Highly persistent spin textures with giant tunable spin splitting in the two-dimensional germanium monochalcogenides

The ability to control the spin textures in semiconductors is a fundamental step toward novel spintronic devices, while seeking desirable materials exhibiting persistent spin texture (PST) remains a key challenge. The PST is the property of materials preserving a unidirectional spin orientation in the momentum space, which has been predicted to support an extraordinarily long spin lifetime of carriers. Herein, by using first-principles density functional theory calculations, we report the emergence of the PST in the two-dimensional (2D) germanium monochalcogenides (GeMC). By considering two stable formations of the 2D GeMC, namely the pure GeX and Janus Ge2XY monolayers (X, Y = S, Se, and Te), we observed the PST around the valence band maximum where the spin orientation is enforced by the lower point group symmetry of the crystal. In the case of the pure GeX monolayers, we found that the PST is characterized by fully out-of-plane spin orientation protected by C2v point group, while the canted PST in the y-z plane is observed in the case of the Janus Ge2XY monolayers due to the lowering symmetry into Cs point group. More importantly, we find large spin-orbit coupling (SOC) parameter in which the PST sustains, which could be effectively tuned by in-plane strain. The large SOC parameter observed in the present systems leads to the small wavelength of the spatially periodic mode of the spin polarization, which is promising for short spin channel in the spin Hall transistor devices.

cond-mat.str-el↗

Ambient pressure Dirac electron system in quasi-two-dimensional molecular conductor $α$-(BETS)$_2$I$_3$

We investigated the precise crystal structures and electronic states in a quasi-two-dimensional molecular conductor $α$-(BETS)$_2$I$_3$ at ambient pressure. The electronic resistivity of this molecular solid shows metal-to-insulator (MI) crossover at $T_{MI}$=50 K. Our x-ray diffraction and $^{13}$C nuclear magnetic resonance experiments revealed that $α$-(BETS)$_2$I$_3$ maintains the inversion symmetry below $T_{MI}$. First-principles calculations found a pair of anisotropic Dirac cones at a general k-point, with the degenerate contact points at the Fermi level. The origin of the insulating state in this system is a small energy gap of ~2 meV opened by the spin-orbit interaction. The Z$_2$ topological invariants indicate that this system is a weak topological insulator. Our results suggest that $α$-(BETS)$_2$I$_3$ is a promising material for studying the bulk Dirac electron system in two dimensions.

cond-mat.str-el↗

Large band splitting with tunable spin polarization in two-dimensional ferroelectric GaXY (X= Se, Te; Y= Cl, Br, I) family

It has been generally accepted that the spin-orbit coupling effect in noncentrosymmetric materials leads to the band splitting and non-trivial spin polarization in the momentum space. However, in some cases, zero net spin polarization in the split bands may occurs, dubbed as the band splitting with vanishing spin polarization (BSVSP) effect, protected by non-pseudo-polar point group symmetry of the wave vector in the first Brillouin zone [Liu et. al., Nat. Commun. \textbf{10}, 5144 (2019)]. In this paper, by using first-principles calculations, we show that the BSVSP effect emerges in two-dimensional (2D) nonsymmorphic Ga$XY$ ($X$= Se, Te; $Y$= Cl, Br, I) family, a new class of 2D materials having in-plane ferroelectricity. Taking the GaTeCl monolayer as a representative example, we observe the BSVSP effect in the split bands along the $X-M$ line located in the proximity of the conduction band minimum. By using $\vec{k}\cdot\vec{p}$ Hamiltonian derived based on the symmetry analysis, we clarify that such effect is originated from the cancellation of the local spin polarization, enforced by non-pseudo-polar $C_{2v}$ point group symmetry of the wave vector along the $X-M$ line. Importantly, we find that the spin polarization can be effectively induced by applying an external out-of-plane electric field, indicating that an electrically tunable spin polarization for spintronic applications is plausible.

cond-mat.mtrl-sci↗

Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn$_3$$X$, $X$ = Sn, Ge

The recent discoveries of strikingly large zero-field Hall and Nernst effects in antiferromagnets Mn$_3$$X$, ($X$ = Sn, Ge) have brought the study of magnetic topological states to the forefront of condensed matter research and technological innovation. These effects are considered fingerprints of Weyl nodes residing near the Fermi energy, promoting Mn$_3$$X$, ($X$ = Sn, Ge) as a fascinating platform to explore the elusive magnetic Weyl fermions. In this review, we provide recent updates on the insights drawn from experimental and theoretical studies of Mn$_3$$X$, ($X$ = Sn, Ge) by combining previous reports with our new, comprehensive set of transport measurements of high-quality Mn$_3$Sn and Mn$_3$Ge single crystals. In particular, we report magnetotransport signatures specific to chiral anomalies in Mn$_3$Ge and planar Hall effect in Mn$_3$Sn, which have not yet been found in earlier studies. The results summarized here indicate the essential role of magnetic Weyl fermions in producing the large transverse responses in the absence of magnetization.

cond-mat.mtrl-sci↗

Enhancement of transverse thermoelectric conductivity originating from stationary points in nodal line

Motivated by the recent discovery of a large anomalous Nernst effect in Co$_2$MnGa, Fe$_3X$ ($X$=Al, Ga) and Co$_3$Sn$_2$S$_2$, we performed a first-principles study to clarify the origin of the enhancement of the transverse thermoelectric conductivity ($α_{ij}$) in these ferromagnets. The intrinsic contribution to $α_{ij}$ can be understood in terms of the Berry curvature ($Ω$) around the Fermi level, and $Ω$ is singularly large along nodal lines (which are gapless in the absence of the spin-orbit coupling) in the Brillouin zone. We find that not only the Weyl points but also stationary points in the energy dispersion of the nodal lines play a crucial role. The stationary points make sharp peaks in the density of states projected onto the nodal line, clearly identifying the characteristic Fermi energies at which $α_{ij}$ is most dramatically enhanced. We also find that $α_{ij}/T$ breaks the Mott relation and show a peculiar temperature dependence at these energies. The present results suggest that the stationary points will give us a useful guiding principle to design magnets showing a large anomalous Nernst effect.

cond-mat.mtrl-sci↗

Spin splitting with persistent spin textures induced by the line defect in 1T-phase of monolayer transition metal dichalcogenides

The spin splitting driven by spin-orbit coupling in monolayer (ML) transition metal dichalcogenides (TMDCs) family has been widely studied only for the 1H-phase structure, while it is not profound for the 1T-phase structure due to the centrosymmetric of the crystal. Based on first-principles calculations, we show that significant spin splitting can be induced in the ML 1T-TMDCs by introducing the line defect. Taking the ML PtSe2 as a representative example, we considered the most stable form of the line defects, namely Se-vacancy line defect (Se-VLD). We find that large spin splitting is observed in the defect states of the Se-VLD, exhibiting a highly unidirectional spin configuration in the momentum space. This peculiar spin configuration may yield the so-called persistent spin textures (PST), a specific spin structure resulting in protection against spin-decoherence and supporting an extraordinarily long spin lifetime. Moreover, by using k.p perturbation theory supplemented with symmetry analysis, we clarified that the emerging of the spin splitting maintaining the PST in the defect states is originated from the inversion symmetry breaking together with one-dimensional nature of the Se-VLD engineered ML PtSe2. Our findings pave a possible way to induce the significant spin splitting in the ML 1T-TMDCs, which could be highly important for designing spintronic devices.

cond-mat.str-el↗

First-principles Study of Spiral Spin Density Waves in Monolayer MnCl$_2$ Using Generalized Bloch Theorem

We investigated the spiral spin density waves in the monolayer 1T-MnCl$_2$ for a set of spiral vectors based on first-principles calculations. The magnetic ground states were evaluated by means of the generalized Bloch theorem within the linear combination of pseudo-atomic orbitals. To reach our purpose, a flat spiral configuration was constructed for the Mn magnetic atom by fixing the direction of its magnetic moment. We confirmed that the ground state was a spiral ground state. We also clarified that a phase transition from a spiral ground state to the other ground states, such as the ferromagnetic state or the antiferromagnetic state, appears when introducing the hole-electron doping. Therefore, we justify that introducing the hole-electron doping tunes the phase transition in the monolayer 1T-MnCl$_2$.

cond-mat.mtrl-sci↗

Intrinsic persistent spin helix in two-dimensional group-IV monochalcogenide MX (M : Sn, Ge; X: S, Se, Te) monolayer

Energy-saving spintronics are believed to be implementable on the systems hosting persistent spin helix (PSH) since they support an extraordinarily long spin lifetime of carriers. However, achieving the PSH requires a unidirectional spin configuration in the momentum space, which is practically non-trivial due to the stringent conditions for fine-tuning the Rashba and Dresselhaus spin-orbit couplings. Here, we predict that the PSH can be intrinsically achieved on a two-dimensional (2D) group-IV monochalcogenide M X monolayer, a new class of the noncentrosymmetric 2D materials having in-plane ferroelctricity. Due to the C2v point group symmetry in the MX monolayer, a unidirectional spin configuration is preserved in the out-of-plane direction and thus maintains the PSH that is similar to the [110] Dresselhaus model in the [110]-oriented quantum well. Our first-principle calculations on various MX (M : Sn, Ge; X: S, Se, Te) monolayers confirmed that such typical spin configuration is observed, in particular, at near the valence band maximum where a sizable spin splitting and a substantially small wavelength of the spin polarization are achieved. Importantly, we observe reversible out-of-plane spin orientation under opposite in-plane ferroelectric polarization, indicating that an electrically controllable PSH for spintronic applications is plausible.

cond-mat.str-el↗

Carrier-induced Antisymmetric-symmetric Tendencies of Spin Stiffness in Zigzag Graphene Nanoribbons

The generalized Bloch theorem was applied to calculate the spin stiffness and to consider its tendencies when introducing the doping in zigzag graphene nanoribbons. To reach the intentions, two different flat spin spiral formations were constructed by fixing the ferromagnetic and antiferromagnetic spin arrangements at the two different edges by applying a constraint scheme method. A spin stiffness was then calculated by means of a quadratic order function, which maps the total energy difference in the self-consistent calculations onto the Heisenberg Hamiltonian. We found a very high spin stiffness, as predicted previously by the supercell calculation. We also showed that the antisymmetric-symmetric tendencies of spin stiffness are induced by the hole-electron doping. The dependence of ribbon widths of zigzag graphene nanoribbon on the spin stiffness was also provided with similar tendencies when the doping is taken into account.

cond-mat.mtrl-sci↗

Electric-field-induced Z2 topological phase transition in strained single bilayer Bi(111)

For controlling the critical electric fields of the topological phase transition in single bilayer Bi(111), we investigated topological phases in a strained system through first-principles calculations. We found a quadratic band touching semimetallic state at tensile strain $ε=0.5$%. Around this strain, the topological phase can be switched to a trivial insulator by an infinitesimal electric field. The positions at which Dirac cones appear in the electric-field-induced topological phase transition changed for the strain $ε>0.5$% and $ε<0.5$%. Our results indicate that this topological phase transition could be applied to novel spintronic devices.

cond-mat.mes-hall↗

Photoinduced Rashba spin to charge conversion via interfacial unoccupied state

At interfaces with inversion symmetry breaking, Rashba effect couples the motion of electrons to their spin; as a result, spin-charge interconversion mechanism can occur. These interconversion mechanisms commonly exploit Rashba spin splitting at the Fermi level by spin pumping or spin torque ferromagnetic resonance. Here, we report evidence of significant photoinduced spin to charge conversion via Rashba spin splitting in an unoccupied state above the Fermi level at the Cu(111)/$α$-Bi$_{2}$O$_{3}$ interface. We predict an average Rashba coefficient of $1.72\times 10^{-10}eV.m$ at 1.98 eV above the Fermi level, by fully relativistic first-principles analysis of the interfacial electronic structure with spin orbit interaction. We find agreement with our observation of helicity dependent photoinduced spin to charge conversion excited at 1.96 eV at room temperature, with spin current generation of $J_{s}=10^{6}A/m^{2}$. The present letter shows evidence of efficient spin-charge conversion exploiting Rashba spin splitting at excited states, harvesting light energy without magnetic materials or external magnetic fields.

cond-mat.mes-hall↗

First-principles Study of Spin-wave Excitations of 3$d$ Transition Metals with Linear Combination of Pseudo-atomic Orbitals

We have employed the generalized Bloch theorem to evaluate the spin stiffness constants of 3$d$ transition metals (bcc-Fe, fcc-Co, and fcc-Ni) within the linear combination of pseudo-atomic orbitals (LCPAO). The spin stiffness constants were obtained by fitting the spin-wave energy curve, which relates to the total energy difference and the spiral vectors. In order to convince the reliable spin stiffness constants, we also provided the convergences of spin stiffness constants in terms of the cutoff radius and the number of orbitals. After observing the specific cutoff radius and the basis orbital, at which the spin stiffness constant converges, we used those two parameters to compute the Curie temperature by using the mean field approximation and the random phase approximation. For the latter approximation, we applied the so-called Debye approximation, which is intended to reduce very significantly many required wavevectors to evaluate the Curie temperature. We claimed that our results are in good agreement with both other calculations and experiments.

cond-mat.mtrl-sci↗