arXiv subjects

Fuqiang Huang

Publications and source records attributed to Fuqiang Huang.

23 records · Page 2Linked to original sources

arXiv2015

Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF

High-quality and sizable single crystals are crucial for studying the intrinsic properties of unconventional superconductors, which are lacking in the 1111 phase of the Fe-based superconductors. Here we report the successful growth of CaFeAsF single crystals with the sizes of 1-2 mm using the self-flux method. Owning to the availability of the high-quality single crystals, the structure and transport properties were investigated with a high reliability. The structure was refined by using the single-crystal x-ray diffraction data, which confirms the reports earlier on the basis of powder data. A clear anomaly associated with the structural transition was observed at 121 K from the resistivity, magnetoresistance, and magnetic susceptibility measurements. Another kink-feature at 110 K, most likely an indication of the antiferromagnetic transition, was also detected in the resistivity data. Our results supply a basis to propel the physical investigations on the 1111 phase of the Fe-based superconductors.

cond-mat.supr-con↗

arXiv2015

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

cond-mat.mtrl-sci↗

arXiv2014

Synthesis, Structural, and Transport Properties of Cr-doped BaTi_2As_2O

The interplay between unconventional superconductivity and the ordering of charge/spin density wave is one of the most vital issues in both condensed matter physics and material science. The Ti-based compound BaTi_2As_2O, which can be seen as the parent phase of superconducting BaTi_2Sb_2O, has a layered structure with a space group P4/mmm, similar to that of cuprate and iron-based superconductors. This material exhibits a charge density wave (CDW) ordering transition revealed by an anomaly at around 200 K in transport measurements. Here, we report the synthesis and systematical study of the physical properties in Cr-doped BaTi_{2-x}Cr_xAs_2O (x = 0 - 0.154), and demonstrate that the transition temperature of the CDW ordering is suppressed gradually by the doped Cr element. The magnetization measurements confirm the evolution of the CDW ordering transition. These observed behaviors are similar to that observed in iron-based superconductors, but no superconductivity emerges down to 2 K. In addition, the first-principles calculations are also carried out for well-understanding the nature of experimental observations.

cond-mat.supr-con↗

arXiv2013

Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moirre patterns are observed and the sensitivity of moirre interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05 degree. The occurrence of moirre pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm2/V.s at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.

cond-mat.mtrl-sci↗

arXiv2008

Superconductivity in layered iron Selenide induced by cobalt- and sodium-doping

Superconductivity with zero resistance transition temperature (Tc) up to 8.4 K and 8.3 K can be obtained by doping cobalt and sodium in alfa-FeSe with the nominal composition of Fe0.92Co0.08Se and Na0.1FeSe, respectively. The electrical resistivity and AC magnetic susceptibility of the prepared samples, measured with physical property measurement system (PPMS), unambiguously consistent with each other to indicate that the samples are superconductive. The respective doping mechanisms for cobalt and sodium into the parent alfa-FeSe are the Fe-site substitution and the interlayer insertion. It is the first time that alfa-FeSe can be induced to be a superconductor with Na+ intercalated into the interlayers.

cond-mat.supr-con↗