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G Palacios

Publications and source records attributed to G Palacios.

2 recordsLinked to original sources

Random Sequential Adsorption with Correlated Defects: A Series Expansion Approach

The Random Sequential Adsorption (RSA) problem holds crucial theoretical and practical significance, serving as a pivotal framework for understanding and optimizing particle packing in various scientific and technological applications. Here the problem of the one-dimensional RSA of k-mers onto a substrate with correlated defects controlled by uniform and power-law distributions is theoretically investigated: the coverage fraction is obtained as a function of the density of defects and several scaling laws are examined. The results are compared with extensive Monte Carlo simulations and more traditional methods based on master equations. Emphasis is given in elucidating the scaling behavior of the fluctuations of the coverage fraction. The phenomenon of universality breaking and the issues of conventional gaussian fluctuations and the Lévy type fluctuations from a simple perspective, relying on the Central Limit Theorem, are also addressed.

cond-mat.stat-mech

Physical properties of a generalized model of multilayer adsorption of dimers

We investigate the transport properties of a complex porous structure with branched fractal architectures formed due to the gradual deposition of dimers in a model of multilayer adsorption. We thoroughly study the interplay between the orientational anisotropy parameter $p_0$ of deposited dimers and the formation of porous structures, as well as its impact on the conductivity of the system, through extensive numerical simulations. By systematically varying the value of $p_0$, several critical and off-critical scaling relations characterizing the behavior of the system are examined. The results demonstrate that the degree of orientational anisotropy of dimers plays a significant role in determining the structural and physical characteristics of the system. We find that the Einstein relation relating to the size scaling of the electrical conductance holds true only in the limiting case of $p_0 \to 1$. Monitoring the fractal dimension of the interface of the multilayer formation for various $p_0$ values, we reveal that in a wide range of $p_0 > 0.2$ interface shows the characteristic of a self-avoiding random walk, compared to the limiting case of $p_0 \to 0$ where it is characterized by the fractal dimension of the backbone of ordinary percolation cluster at criticality. Our results thus can provide useful information about the fundamental mechanisms underlying the formation and behavior of wide varieties of amorphous and disordered systems that are of paramount importance both in science and technology as well as in environmental studies.

cond-mat.stat-mech