arXiv subjects

Günter Reiss

Publications and source records attributed to Günter Reiss.

At least 19 recordsLinked to original sources

arXiv2026

Femtosecond all-optical coherent control of spin polarization in altermagnets

Altermagnets constitute an emerging materials platform for spintronic technologies by combining compensated magnetic order with ferromagnet-like spin-split electronic bands. Here, we investigate the proposed d-wave altermagnetic material RuO2 using circularly polarized ultrashort laser pulses. Time-resolved magneto-optical Kerr effect measurements, which are intrinsically sensitive to surface and interface states, reveal the ultrafast spin response of RuO2. In contrast to the demagnetization dynamics characteristic of conventional ferromagnets, we observe a distinct coherent contribution to the complex Kerr rotation that appears during the light-matter interaction and lasts for about 200 fs. Similar signatures have been associated with spin-momentum locking and directional band splitting in spin-split surface states of topological insulators as well as spin-orbit-coupled semiconductors. They are governed by a finite Raman coherence time. We interpret this coherent response as evidence for transient spin-polarized surface states in RuO2, consistent with the emergence of altermagnetic surface states that are directly relevant to spin-polarized transport at surfaces and interfaces.

cond-mat.other↗

arXiv2026

Surface-Localized Magnetic Order in RuO2 Thin Films Revealed by Low-Energy Muon Probes

Ruthenium dioxide (RuO2) has recently emerged as a candidate altermagnet, yet its intrinsic magnetic ground state, particularly in thin films, remains debated. This study aims to clarify the nature and spatial extent of the magnetic order in RuO2 thin films grown under different conditions. Thin films of RuO2 with thicknesses of 30 nm and 33 nm are fabricated by pulsed laser deposition and sputtering onto TiO2(110) and Al2O3(1-102) substrates, respectively. Low-energy muon spin rotation/relaxation (LE-muSR) with depth-resolved sensitivity measurements is performed in transverse magnetic fields (TF) from 4 K to 290 K. The muSR data collected with a muon implantation energy of 1 keV reveal that magnetic signals originate from the near-surface region of the film (<10 nm), and the affected volume fraction is at most about 8.5%. The localized magnetic response is consistent across different substrates, growth techniques, and parameter sets, suggesting a common origin related to surface defects and dimensionality effects. The combined use of TF-muSR and the study of depth-dependent implantation with low-energy muons provides direct evidence for surface-confined, inhomogeneous static magnetic order in RuO2 thin films, helping reconcile discrepancies. These findings underscore the importance of considering reduced-dimensional contributions and motivate further investigation into the role of defects, strain, and stoichiometry on the magnetic properties of RuO2, especially at the surface.

cond-mat.mes-hall↗

arXiv2025

Fostering Innovation: Streamlining Magnetocaloric Materials Research by Digitalization

Refrigeration based on the magnetocaloric effect (MCE) can contribute to energysaving, environmentally friendly cooling in private households, or industrial application. The cooling is based on the reversible heat release or uptake during a phase-transformation of the materials that can be controlled by a magnetic field. This process could replace conventional compression-based refrigeration, which often relies on environmentally harmful refrigerants. Here we show, how to digitalize the process chain for the synthesis, theoretical and experimental characterization, and prototypical application of magnetocaloric alloy. Different Heusler alloys are examined experimentally as model systems for potential application in magnetic cooling. OTTR templates are used for the acquisition and semantic representation of knowledge in the development of an ontology. The ontology, when combined with unstructured data, can be exploited to train a model that can then be used to predict missing facts, which can help to gain new insights and to generate new hypotheses. Furthermore, tools are developed that automate data acquisition into ontological structures and workflows are implemented that provide an easy-to-use theoretical and experimental evaluation of the MCE from first principles and raw data.

cond-mat.mtrl-sci↗

arXiv2022

Disentangling complex current pathways in a metallic Ru/Co bilayer nanostructure using THz spectroscopy

Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant Ru/Co bilayer nanostructure in a contact-free fashion using THz time-domain spectroscopy. By applying an effective resistor network to the data, we resolve the complex current pathways within the nanostructure and determine the degree of electronic transparency of the internal interface between the Ru and Co nanolayers.

cond-mat.mes-hall↗

arXiv2021

Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems

We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and unidirectional spin Hall magnetoresistance (USMR) is achieved by introducing the second heavy metal (HM) with the opposite sign of the spin Hall angle. The extracted SOT efficiencies are larger for the trilayers as compared to the bilayers, confirming the enhanced values reported for the trilayers with perpendicularly magnetized Co. The maximum effective spin Hall angle found for the Pt/Co/Ta trilayer reaches $θ_{SH}$ = 20%. The USMR of the trilayer yields up to 27% higher effect as for the respective bilayers with the largest effective USMR amplitude of -0.32 $\times$ 10$^{-5}$ for the Pt/Co/Ta trilayer at a charge current density of 10$^{7}$ A/cm$^2$.

cond-mat.mes-hall↗

arXiv2019

Resistive contribution in electrical switching experiments with antiferromagnets

Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessary to switch the magnetic state can be large, often close to the destruction threshold of the device. We demonstrate that the resulting electrical stress changes the film resistivity locally and thereby breaks the fourfold rotational symmetry of the conductor. This symmetry breaking due to film inhomogeneity produces signals, that resemble the anisotropic magnetoresistance and is experimentally seen as a "saw-tooth"-shaped transverse resistivity. This artifact can persist over many repeats of the switching experiment and is not easily separable from the magnetic contribution. We discuss the origin of the artifact, elucidate the role of the film crystallinity, and propose approaches how to separate the resistive contribution from the magnetic contribution.

cond-mat.mtrl-sci↗

arXiv2019

Electrical Néel-order switching in magnetron-sputtered CuMnAs thin films

Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films grown with molecular beam epitaxy. Here, we demonstrate that the magnetic order of magnetron-sputtered CuMnAs films can also be manipulated by electrical current pulses. The switching efficiency and relaxation as a function of temperature, current density, and pulse width can be described by a thermal-activation model. Our findings demonstrate that CuMnAs can be fabricated with an industry-compatible deposition technique, which will accelerate the development cycle of devices based on this remarkable material.

cond-mat.mtrl-sci↗

arXiv2019

Low damping magnetic properties and perpendicular magnetic anisotropy with strong volume contribution in the Heusler alloy Fe1.5CoGe

We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe$_{1.5}$CoGe. Thickness series annealed at different temperatures are prepared and the magnetic damping is measured, a lowest value of $α=2.18\times 10^{-3}$ is obtained. The perpendicular magnetic anisotropy properties in Fe$_{1.5}$CoGe/MgO are also characterized. The evolution of the interfacial perpendicular anisotropy constant $K^{\perp}_{\rm S}$ with the annealing temperature is shown and compared with the widely used CoFeB/MgO interface. A large volume contribution to the perpendicular anisotropy of $(4.3\pm0.5)\times 10^{5}$ $\rm J/m^3$ is also found, in contrast with vanishing bulk contribution in common Co- and Fe-based Heusler alloys.

cond-mat.mtrl-sci↗

arXiv2018

Tunnel magneto-Seebeck effect

The interplay of charge, spin and heat transport is investigated in the fascinating research field of spin caloritronics, the marriage of spintronics and thermoelectrics. Here, many new spin-dependent thermal transport phenomena in magnetic nanostructures have been explored in the recent years. One of them is the tunnel magneto-Seebeck (TMS) effect in magnetic tunnel junctions (MTJs) that has large potential for future nanoelectronic devices, such as nanostructured sensors for three-dimentional thermal gradients, or scanning tunneling microscopes driven by temperature differences. The TMS describes the dependence of the MTJ's thermopower on its magnetic cofiguration when a thermal gradient is applied. In this review, we highlight the successful way from first observation of the TMS in 2011 to current ongoing developments in this research area. We emphasize on different heating techniques, material designs, applications, and additional physical aspects such as the role of the thermal conductivity of the barrier material. We further demonstrate the efficient interplay between ab initio calculations and experiments within this field, as this has led, e.g., to the detection of large TMS ratios in MTJs with half-metallic Heusler electrodes.

cond-mat.mes-hall↗

arXiv2018

Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias

We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(\textit{x})$/CoFeB/MgO$(\textit{y})$/CoFeB$(\textit{z})$/Ta/Pd. We obtain a large perpendicular exchange bias of 79.6$\,$kA/m for $x=0.3\,$nm. For stacks with $z=1.05\,$nm, the magnetic properties of the soft electrode resemble the characteristics of superparamagnetism. For stacks with $x=0.4\,$nm, $y=2\,$nm, and $z=1.20\,$nm, the exchange bias presents a significant decrease at post annealing temperature $T_\textrm{ann}=330\,^{\circ}$C for 60 min, while the interlayer exchange coupling and the saturation magnetization per unit area sharply decay at $T_\textrm{ann}=340\,^{\circ}$C for 60 min. Simultaneously, the tunnel magnetoresistance ratio shows a peak of $65.5\%$ after being annealed at $T_\textrm{ann}=300\,^{\circ}$C for 60 min, with a significant reduction down to $10\%$ for higher annealing temperatures ($T_\textrm{ann}\geq330\,^{\circ}$C) and down to $14\%$ for longer annealing times ($T_\textrm{ann}=300\,^{\circ}$C for 90 min). We attribute the large decrease of tunnel magnetoresistance ratio to the loss of exchange bias in the pinned electrode.

cond-mat.mtrl-sci↗

arXiv2018

Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

In general, it is difficult to access the thermal conductivity of thin insulating films experimentally just by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl$_2$O$_4$ (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO ($0.7$ W/(K$\cdot$m)) and MgO ($5.8$ W/(K$\cdot$m)), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.

cond-mat.mtrl-sci↗

arXiv2018

Evolution of the interfacial perpendicular magnetic anisotropy constant of the Co$_2$FeAl/MgO interface upon annealing

We investigate thickness series of films of the Heusler alloy Co$_2$FeAl in order to study the effect of annealing on the interface with a MgO layer and on the bulk magnetic properties. Our results reveal that while the perpendicular interface anisotropy constant $K^{\perp}_{\rm S}$ is zero for the as-deposited samples, its value increases with annealing up to a value of $1.14\, \pm \,0.07$~mJ/m$^2$ for the series annealed at 320$^{\rm o}$C and of $2.07\, \pm \,0.7$~mJ/m$^2$ for the 450$^{\rm o}$C annealed series owing to a strong modification of the interface during the thermal treatment. This large value ensures a stabilization of a perpendicular magnetization orientation for a thickness below 1.7~nm. The data additionally shows that the in-plane biaxial anisotropy constant has a different evolution with thickness in as-deposited and annealed systems. The Gilbert damping parameter $α$ shows minima for all series for a thickness of 40~nm and an absolute minimum value of $2.8\pm0.1\cdot10^{-3}$. The thickness dependence is explained in terms of an inhomogenous magnetization state generated by the interplay between the different anisotropies of the system and by crystalline disorder.

cond-mat.mtrl-sci↗

arXiv2017

Large magneto-Seebeck effect in magnetic tunnel junctions with half-metallic Heusler electrodes

Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck voltages of only some μV, which hampers applications. Here, we demonstrate that half-metallic Heusler compounds are hot candidates for enhancing spin-dependent thermoelectric effects. This becomes evident when considering the asymmetry of the spin-split density of electronic states around the Fermi level that determines the spin-dependent thermoelectric transport in magnetic tunnel junctions. We identify Co$_2$FeAl and Co$_2$FeSi Heusler compounds as ideal due to their energy gaps in the minority density of states, and demonstrate devices with substantially larger Seebeck voltages and tunnel magneto-Seebeck effect ratios than the commonly used Co-Fe-B based junctions.

cond-mat.mtrl-sci↗

arXiv2017

Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias

Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of Ta/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions in dependence on the capping layer, i.e., Hf or Ta. In these stacks perpendicular exchange bias fields of -500\,Oe along with perpendicular magnetic anisotropy are combined. A tunnel magnetoresistance of $(47.2\pm 1.4)\%$ for the Hf-capped sample was determined compared to the Ta one $(42.6\pm 0.7)\%$ at room temperature. Interestingly, this observation is correlated to the higher boron absorption of Hf compared to Ta which prevents the suppression of $Δ_{\textrm{1}}$ channel and leads to higher tunnel magnetoresistance values. Furthermore, the temperature dependent coercivities of the soft electrodes of both samples are mainly described by the Stoner-Wohlfarth model including thermal fluctuations. Slight deviations at low temperatures can be attributed to a torque on the soft electrode that is generated by the pinned magnetic layer system.

cond-mat.mtrl-sci↗

arXiv2017

Electrical transport and optical band gap of NiFe$_\textrm{2}$O$_\textrm{x}$ thin films

We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen deficiency leads to controllable electrical and optical properties which would be beneficial for the investigations of the transport phenomena and would, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques in order to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity measurements we obtained the conduction mechanisms that govern the systems in high and low temperature regimes, extracting low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. Hall effect measurements showed the mixed-type semiconducting character of our films. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energy, with lower band gap values in the less oxidized samples.

physics.app-ph↗

arXiv2017

Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices

Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak antilocalization and the weak links of the SQUID fully-gapped proximity induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2$π$ periodicity, possibly dominated by the bulk conductivity.

cond-mat.mes-hall↗

arXiv2017

Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB based magnetic tunnel junctions by variation of the MgAl$_2$O$_4$ and MgO barrier thickness

We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct maximum in the tunnel magneto-Seebeck effect for 2.6nm barrier thickness. This maximum is independently measured for two barrier materials, namely MgAl$_2$O$_4$ and MgO. Additionally, samples with an MgAl$_2$O$_4$ barrier exhibit a high thermovoltage of more than 350$μ$V in comparison to 90$μ$V for the MTJs with MgO barrier when heated with the maximum laser power of 150mW. Our results allow for the fabrication of improved stacks when dealing with temperature differences across magnetic tunnel junctions for future applications in spin caloritronics, the emerging research field that combines spintronics and themoelectrics.

cond-mat.mtrl-sci↗

arXiv2017

Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices

We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray diffraction and reflection, as well as atomic force and high-resolution transmission electron microscopy. We find an excellent crystal growth quality with low interface roughnesses of 1-3 Å, which is crucial for the preparation of working tunnelling barriers. Using Fe as a ferromagnetic electrode material we prepared magnetic tunneling junctions and measured the magnetoresistance. We find a sizeable maximum magnetoresistance value of 135%, which is comparable to other common Fe based MTJ systems.

cond-mat.mtrl-sci↗