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G. A. C. Jones

Publications and source records attributed to G. A. C. Jones.

72 records · Page 4Linked to original sources

On the Zero-Bias Anomaly in Quantum Wires

Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off.

cond-mat.mes-hall↗

Spin-Incoherent Transport in Quantum Wires

When a quantum wire is weakly confined, a conductance plateau appears at e^2/h with decreasing carrier density in zero magnetic field accompanied by a gradual suppression of the 2e^2/h plateau. Applying an in-plane magnetic field B|| does not alter the value of this quantization; however, the e^2/h plateau weakens with increasing B|| up to 9 T, and then strengthens on further increasing B||, which also restores the 2e^2/h plateau. Our results are consistent with spin-incoherent transport in a one-dimensional wire.

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Low Temperature Transport in Undoped Mesoscopic Structures

Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.

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Pauli spin blockade in carbon nanotube double quantum dots

We report Pauli spin blockade in an impurity defined carbon nanotube double quantum dot. We observe a pronounced current suppression for negative source-drain bias voltages which is investigated for both symmetric and asymmetric coupling of the quantum dots to the leads. The measured differential conductance agrees well with a theoretical model of a double quantum dot system in the spin-blockade regime which allows us to estimate the occupation probabilities of the relevant singlet and triplet states. This work shows that effective spin-to-charge conversion in nanotube quantum dots is feasible and opens the possibility of single-spin readout in a material that is not limited by hyperfine interaction with nuclear spins.

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Charge pumping in carbon nanotube quantum dots

We investigate charge pumping in carbon nanotube quantum dots driven by the electric field of a surface acoustic wave. We find that at small driving amplitudes, the pumped current reverses polarity as the conductance is tuned through a Coulomb blockade peak using a gate electrode. We study the behavior as a function of wave amplitude, frequency and direction and develop a model in which our results can be understood as resulting from adiabatic charge redistribution between the leads and quantum dots on the nanotube.

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Field-tunable magnetic phases in a semiconductor-based two-dimensional Kondo lattice

We show the existence of intrinsic localized spins in mesoscopic high-mobility GaAs/AlGaAs heterostructures. Non-equilibrium transport spectroscopy reveals a quasi-regular distribution of the spins, and indicates that the spins interact indirectly via the conduction electrons. The interaction between spins manifests in characteristic zero-bias anomaly near the Fermi energy, and indicates gate voltage-controllable magnetic phases in high-mobility heterostructures. To address this issue further, we have also designed electrostatically tunable Hall devices, that allow a probing of Hall characteristics at the active region of the mesoscopic devices. We show that the zero field Hall coefficient has an anomalous contribution, which can be attributed to scattering by the localized spins. The anomalous contribution can be destroyed by an increase in temperature, source drain bias, or field range.

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Sensitivity of the magnetic state of a spin lattice on itinerant electron orbital phase

Spatially extended localized spins can interact via indirect exchange interaction through Friedel oscillations in the Fermi sea. In arrays of localized spins such interaction can lead to a magnetically ordered phase. Without external magnetic field such a phase is well understood via a "two-impurity" Kondo model. Here we employ non-equilibrium transport spectroscopy to investigate the role of the orbital phase of conduction electrons on the magnetic state of a spin lattice. We show experimentally, that even tiniest perpendicular magnetic field can influence the magnitude of the inter-spin magnetic exchange.

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Energy-dependent tunnelling from few-electron dynamic quantum dots

We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale (a few meV) is comparable to those in static QDs as expected.

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Probing e-e interactions in a periodic array of GaAs quantum wires

We present the results of non-linear tunnelling spectroscopy between an array of independent quantum wires and an adjacent two-dimensional electron gas (2DEG) in a double-quantum-well structure. The two layers are separately contacted using a surface-gate scheme, and the wires are all very regular, with dimensions chosen carefully so that there is minimal modulation of the 2DEG by the gates defining the wires. We have mapped the dispersion spectrum of the 1D wires down to the depletion of the last 1D subband by measuring the conductance \emph{G} as a function of the in-plane magnetic field \emph{B}, the interlayer bias $V_{\rm dc}$ and the wire gate voltage. There is a strong suppression of tunnelling at zero bias, with temperature and dc-bias dependences consistent with power laws, as expected for a Tomonaga-Luttinger Liquid caused by electron-electron interactions in the wires. In addition, the current peaks fit the free-electron model quite well, but with just one 1D subband there is extra structure that may indicate interactions.

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Surface-acoustic-wave-driven luminescence from a lateral p-n junction

The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.

cond-mat.other↗

Ballistic electron spectroscopy

We demonstrate the feasibility of ballistic electron spectroscopy as a new tool for mesoscopic physics. A quantum dot is utilised as an energy-selective detector of non-equilibrium ballistic electrons injected into a two-dimensional electron system. In this paper we use a second quantum dot as the electron injector to evaluate the scheme. We propose an application in the study of interacting 1D and 0D systems.

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Fano effect and Kondo effect in quantum dots formed in strongly coupled quantum wells

We present lateral transport measurements on strongly, vertically coupled quantum dots formed in separate quantum wells in a GaAs/AlGaAs heterostructure. Coulomb oscillations are observed forming a honeycomb lattice consistent with two strongly coupled dots. When the tunnel barriers in the upper well are reduced we observe the Fano effect due to the interfering paths through a resonant state in the lower well and a continuum state in the upper well. In both regimes an in plane magnetic field reduces the coupling between the wells when the magnetic length is comparable to the center to center separation of the wells. We also observe the Kondo effect which allows the spin states of the double dot system to be probed.

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Current flow past an etched barrier: field emission from a two-dimensional electron gas

We find that, under appropriate conditions, electrons can pass a barrier etched across a two dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate. The current-voltage characteristics exhibit a rapid increase in the current at the field emission threshold and intrinsic bistability above this threshold, consistent with a heating instability occurring in the second 2DEG. These results may explain similar behaviour recently seen in a number of front-gated devices by several groups.

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Experimental studies of T--shaped quantum dot transistors: phase-coherent electron transport

We have measured the low-temperature transport properties of a T-shaped quantum dot. Replicated oscillations superimposed on one-dimensional conductance steps are observed. These structures are consistent with electron phase-coherent length resonance effects in the ballistic regime. Using a simple model, we suggest that both one-dimensional and two-dimensional electron-electron scattering gives rise to electron phase-breaking in our system.

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Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well

At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between experiment and theory testing the validity of local field theories. Using a perpendicular magnetic field to raise the magnetoplasmon energy we can induce a crossover to single-particle Coulomb scattering.

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Tunneling Between Parallel Two-Dimensional Electron Gases

The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime of the electrons within a 2DEG has been measured as a function of $n$ and $T$, giving information about the density dependence of the electron-impurity scattering and the temperature dependence of the electron-electron scattering. In a magnetic field there is a general suppression of equilibrium tunneling for fields above $B=0.6$ T. A gap in the tunneling density of states has been measured over a wide range of magnetic fields and filling factors, and various theoretical predictions have been examined. In a strong magnetic field, when there is only one partially filled Landau level in each layer, the temperature dependence of the conductance characteristics has been modeled with a double-Gaussian spectral density.

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Tunneling Between Two-Dimensional Electron Gases in a Weak Magnetic Field

We have measured the tunneling between two two-dimensional electron gases (2DEGs) in weak magnetic fields, when the carrier densities of the two electron layers are matched. At zero magnetic field, B=0, the lineshape of the equilibrium tunneling resonance is best fit by a Lorentzian, with a linewidth which is determined by the roughness of the tunnel barrier. For $B\not=0$ with filling factors $ν\gg 1$, there is a suppression of the resonant tunneling conductance about zero bias, $V_{\text{sd}}=0$. This low field signature of the high field Coulomb gap shows the same linear $B$ dependence as previously measured for $ν<1$.

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Tunneling Between Two-Dimensional Electron Gases in a Strong Magnetic Field

We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $ν<1$, there is a gap in the current-voltage characteristics centered about $V=0$, followed by a tunneling peak at $\sim 6$~mV. Both features have been observed before and have been attributed to electron-electron interactions within a layer. We have measured high field tunneling peak positions and fitted gap parameters that are proportional to $B$, and independent of the carrier densities of the two layers. This suggests a different origin for the gap to that proposed by current theories, which predict a $\sqrt{B}$ dependence.

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