arXiv subjects

G. Boissier

Publications and source records attributed to G. Boissier.

3 recordsLinked to original sources

arXiv2022

Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.

cond-mat.mes-hall↗

arXiv2019

Massless Dirac fermions in III-V semiconductor quantum wells

We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the $Γ$ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity $v_F=1.8\cdot10^5$ m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.

cond-mat.mes-hall↗

arXiv2010

Hot Carrier Solar Cells : In the Making ?

Hot carrier solar cells allow potential efficiency close to the thermodynamical limit in ideal conditions. However, the feasability of such devices has not been clearly stated so far and only ideal cells were considered in previous studies. Here we develop a model with realistic energy selective contacts, carrier thermalization and absorptivity. The requirements in term of contact selectivity is investigated, showing that semi-selective contacts are not incompatible with high efficiencies. Candidates for absorbing material were synthesized and the required thermalization properties are obtained. Specific structures were designed to enhance absorption of concentrated sunlight in a small material thickness, allowing high carrier density in the absorber.

cond-mat.mtrl-sci↗