arXiv subjects

G. Brocks

Publications and source records attributed to G. Brocks.

At least 19 recordsLinked to original sources

arXiv2016

Ohmic contacts to 2D semiconductors through van der Waals bonding

High contact resistances have blocked the progress of devices based on MX2 (M = Mo,W; X = S,Se,Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. We show that (i) one can remove the interface states by covering the metal by a 2D layer, which is van der Waals-bonded to the MX2 layer, and (ii) one can choose the buffer layer such, that it yields a p-type contact with a zero Schottky barrier height. We identify possible buffer layers such as graphene, a monolayer of h-BN, or an oxide layer with a high electron affinity, such as MoO3. The most elegant solution is a metallic M'X'2 layer with a high work function. A NbS2 monolayer adsorbed on a metal yields a high work function contact, irrespective of the metal, which gives a barrierless contact to all MX2 layers.

cond-mat.mes-hall↗

arXiv2015

A first-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces

We explore the adsorption of MoS2 on a range of metal substrates by means of first-principles density functional theory calculations. Including van der Waals forces in the density functional is essential to capture the interaction between MoS2 and a metal surface, and obtain reliable interface potential steps and Schottky barriers. Special care is taken to construct interface structures that have a mismatch between the MoS2 and the metal lattices of <1%. MoS2 is chemisorbed on the early transition metal Ti, which leads to a strong perturbation of its (electronic) structure and a pinning of the Fermi level 0.54 eV below the MoS2 conduction band due to interface states. MoS2 is physisorbed on Au, where the bonding hardly perturbs the electronic structure. The bonding of MoS2 on other metals lies between these two extreme cases, with interface interactions for the late 3d transition metals Co, Ni, Cu and the simple metal Mg that are somewhat stronger than for the late 4d/5d transition metals Pd, Ag, Pt and the simple metal Al. Even a weak interaction, such as in the case of Al, gives interface states, however, with energies inside the MoS2 band gap, which pin the Fermi level below the conduction band.

cond-mat.mtrl-sci↗

arXiv2014

Li intercalation in graphite: a van der Waals density-functional study

Modeling layered intercalation compounds from first principles poses a problem, as many of their properties are determined by a subtle balance between van der Waals interactions and chemical or Madelung terms, and a good description of van der Waals interactions is often lacking. Using van der Waals density functionals we study the structures, phonons and energetics of the archetype layered intercalation compound Li-graphite. Intercalation of Li in graphite leads to stable systems with calculated intercalation energies of $-0.2$ to $-0.3$~eV/Li atom, (referred to bulk graphite and Li metal). The fully loaded stage 1 and stage 2 compounds LiC$_6$ and Li$_{1/2}$C$_6$ are stable, corresponding to two-dimensional $\sqrt3\times\sqrt3$ lattices of Li atoms intercalated between two graphene planes. Stage $N>2$ structures are unstable compared to dilute stage 2 compounds with the same concentration. At elevated temperatures dilute stage 2 compounds easily become disordered, but the structure of Li$_{3/16}$C$_6$ is relatively stable, corresponding to a $\sqrt7\times\sqrt7$ in-plane packing of Li atoms. First-principles calculations, along with a Bethe-Peierls model of finite temperature effects, allow for a microscopic description of the observed voltage profiles.

cond-mat.mtrl-sci↗

arXiv2010

Nonlinear screening of charges induced in graphene by metal contacts

To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a consequence of the ultra-relativistic nature of the electron spectrum near the Fermi energy. The induced potential decays with the distance from the metal contact as x^{-1/2} and x^{-1} for undoped and doped graphene, respectively, breaking its spatial homogeneity. In the contact region the metal contact can give rise to the formation of a p-p', n-n', p-n junction (or with additional gating or impurity doping, even a p-n-p' junction) that contributes to the overall resistance of the graphene sample, destroying its electron-hole symmetry. Using the work functions of metal-covered graphene recently calculated by Khomyakov et al. [Phys. Rev. B 79, 195425 (2009)] we predict the boundary potential and junction type for different metal contacts.

cond-mat.mtrl-sci↗

arXiv2009

First-principles study of the interaction and charge transfer between graphene and metals

Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density functional theory. The bonding of graphene to Al, Ag, Cu, Au and Pt(111) surfaces is so weak that its unique "ultrarelativistic" electronic structure is preserved. The interaction does, however, lead to a charge transfer that shifts the Fermi level by up to 0.5 eV with respect to the conical points. The crossover from p-type to n-type doping occurs for a metal with a work function ~5.4 eV, a value much larger than the work function of free-standing graphene, 4.5 eV. We develop a simple analytical model that describes the Fermi level shift in graphene in terms of the metal substrate work function. Graphene interacts with and binds more strongly to Co, Ni, Pd and Ti. This chemisorption involves hybridization between graphene $p_z$-states and metal d-states that opens a band gap in graphene. The graphene work function is as a result reduced considerably. In a current-in-plane device geometry this should lead to n-type doping of graphene.

cond-mat.mtrl-sci↗

arXiv2008

Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene

The in-plane lattice constants of close-packed planes of fcc and hcp Ni and Co match that of graphite almost perfectly so that they share a common two dimensional reciprocal space. Their electronic structures are such that they overlap in this reciprocal space for one spin direction only allowing us to predict perfect spin filtering for interfaces between graphite and (111) fcc or (0001) hcp Ni or Co. First-principles calculations of the scattering matrix show that the spin filtering is quite insensitive to amounts of interface roughness and disorder which drastically influence the spin-filtering properties of conventional magnetic tunnel junctions or interfaces between transition metals and semiconductors. When a single graphene sheet is adsorbed on these open $d$-shell transition metal surfaces, its characteristic electronic structure, with topological singularities at the K points in the two dimensional Brillouin zone, is destroyed by the chemical bonding. Because graphene bonds only weakly to Cu which has no states at the Fermi energy at the K point for either spin, the electronic structure of graphene can be restored by dusting Ni or Co with one or a few monolayers of Cu while still preserving the ideal spin injection property.

cond-mat.mtrl-sci↗

arXiv2008

Evidence for the formation of a Mott state in potassium-intercalated pentacene

We investigate electronic transport through pentacene thin-films intercalated with potassium. From temperature-dependent conductivity measurements we find that potassium-intercalated pentacene shows metallic behavior in a broad range of potassium concentrations. Surprisingly, the conductivity exhibits a re-entrance into an insulating state when the potassium concentration is increased past one atom per molecule. We analyze our observations theoretically by means of electronic structure calculations, and we conclude that the phenomenon originates from a Mott metal-insulator transition, driven by electron-electron interactions.

cond-mat.str-el↗

arXiv2008

Doping graphene with metal contacts

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by $\sim 0.5$ eV. At equilibrium separations, the crossover from $p$-type to $n$-type doping occurs for a metal work function of $\sim 5.4$ eV, a value much larger than the graphene work function of 4.5 eV. The numerical results for the Fermi level shift in graphene are described very well by a simple analytical model which characterizes the metal solely in terms of its work function, greatly extending their applicability.

cond-mat.mtrl-sci↗

arXiv2008

First-principles study of the optical properties of MgxTi(1-x)H2

The optical and electronic properties of Mg-Ti hydrides are studied using first-principles density functional theory. Dielectric functions are calculated for MgxTi(1-x)H2 with compositions x = 0.5, 0.75, and 0.875. The structure is that of fluorite TiH2 where both Mg and Ti atoms reside at the Ti positions of the lattice. In order to assess the effect of randomness in the Mg and Ti occupations we consider both highly ordered structures, modeled with simple unit cells of minimal size, and models of random alloys. These are simulated by super cells containing up to 64 formula units (Z = 64). All compositions and structural models turn out metallic, hence the dielectric functions contain interband and intraband free electron contributions. The former are calculated in the independent particle random phase approximation. The latter are modeled based upon the intraband plasma frequencies, which are also calculated from first-principles. Only for the models of the random alloys we obtain a black state, i.e. low reflection and transmission in the energy range from 1 to 6 eV.

cond-mat.mtrl-sci↗

arXiv2007

A first-principles study of the electronic structure and stability of Be(BH4)2

Alanates and boranates are studied intensively because of their potential use as hydrogen storage materials. In this paper we present a first-principles study of the electronic structure and the energetics of beryllium boranate, Be(BH4)2. From total energy calculations we show that - in contrast to the other boranates and alanates - hydrogen desorption directly to the elements is likely, and is at least competitive with desorption to the elemental hydride (BeH2). The formation enthalpy of Be(BH4)2 is only -0.12 eV/H2 (at T=0K). This low value can be rationalized by the participation of all atoms in the covalent bonding, in contrast to the ionic bonding observed in other boranates. From calculations of thermodynamic properties at finite temperature we estimate a decomposition temperature of 162 K at a pressure of 1 bar.

cond-mat.mtrl-sci↗

arXiv2007

Graphite and graphene as perfect spin filters

Based upon the observations (i) that their in-plane lattice constants match almost perfectly and (ii) that their electronic structures overlap in reciprocal space for one spin direction only, we predict perfect spin filtering for interfaces between graphite and (111) fcc or (0001) hcp Ni or Co. The spin filtering is quite insensitive to roughness and disorder. The formation of a chemical bond between graphite and the open $d$-shell transition metals that might complicate or even prevent spin injection into a single graphene sheet can be simply prevented by dusting Ni or Co with one or a few monolayers of Cu while still preserving the ideal spin injection property.

cond-mat.mtrl-sci↗

arXiv2007

Ab initio study on the effects of transition metal doping of Mg2NiH4

Mg2NiH4 is a promising hydrogen storage material with fast (de)hydrogenation kinetics. Its hydrogen desorption enthalpy, however, is too large for practical applications. In this paper we study the effects of transition metal doping by first-principles density functional theory calculations. We show that the hydrogen desorption enthalpy can be reduced by ~0.1 eV/H2 if one in eight Ni atoms is replaced by Cu or Fe. Replacing Ni by Co atoms, however, increases the hydrogen desorption enthalpy. We study the thermodynamic stability of the dopants in the hydrogenated and dehydrogenated phases. Doping with Co or Cu leads to marginally stable compounds, whereas doping with Fe leads to an unstable compound. The optical response of Mg2NiH4 is also substantially affected by doping. The optical gap in Mg2NiH4 is ~1.7 eV. Doping with Co, Fe or Cu leads to impurity bands that reduce the optical gap by up to 0.5 eV.

cond-mat.mtrl-sci↗

arXiv2006

A model for the formation energies of alanates and boranates

We develop a simple model for the formation energies (FEs) of alkali and lkaline earth alanates and boranates, based upon ionic bonding between metal cations and (AlH4)- or (BH4)- anions. The FEs agree well with values obtained from first principles calculations and with experimental FEs. The model shows that details of the crystal structure are relatively unimportant. The small size of the (BH4)- anion causes a strong bonding in the crystal, which makes boranates more stable than alanates. Smaller alkali or alkaline earth cations do not give an increased FE. They involve a larger ionization potential that compensates for the increased crystal bonding.

cond-mat.mtrl-sci↗

arXiv2006

Electronic structure and optical properties of lightweight metal hydrides

We study the electronic structures and dielectric functions of the simple hydrides LiH, NaH, MgH2 and AlH3, and the complex hydrides Li3AlH6, Na3AlH6, LiAlH4, NaAlH4 and Mg(AlH4)2, using first principles density functional theory and GW calculations. All these compounds are large gap insulators with GW single particle band gaps varying from 3.5 eV in AlH3 to 6.5 eV in the MAlH4 compounds. The valence bands are dominated by the hydrogen atoms, whereas the conduction bands have mixed contributions from the hydrogens and the metal cations. The electronic structure of the aluminium compounds is determined mainly by aluminium hydride complexes and their mutual interactions. Despite considerable differences between the band structures and the band gaps of the various compounds, their optical responses are qualitatively similar. In most of the spectra the optical absorption rises sharply above 6 eV and has a strong peak around 8 eV. The quantitative differences in the optical spectra are interpreted in terms of the structure and the electronic structure of the compounds.

cond-mat.mtrl-sci↗

arXiv2006

Surface Dipoles and Work Functions of Alkylthiolates and Fluorinated Alkylthiolates on Au(111)

We study the dipole formation at the surface formed by -CH3 and -CF3 terminated shortchain alkyl-thiolate monolayers on Au(111). In particular, we monitor the change in work function upon chemisorption using density functional theory calculations. We separate the surface dipole into two contributions, resulting from the gold-adsorbate interaction and the intrinsic dipole of the adsorbate layer, respectively. The two contributions turn out to be approximately additive. Adsorbate dipoles are defined by calculating dipole densities of free-standing molecular monolayers. The gold-adsorbate interaction is to a good degree determined by the Au-S bond only. This bond is nearly apolar and its contribution to the surface dipole is relatively small. The surface dipole of the self-assembled monolayer is then dominated by the intrinsic dipole of the thiolate molecules. Alkyl-thiolates increase the work function of Au(111), whereas fluorinated alkyl-thiolates decrease it.

cond-mat.mtrl-sci↗

arXiv2005

Band gaps in pseudopotential self-consistent GW calculations

For materials which are incorrectly predicted by density functional theory to be metallic, an iterative procedure must be adopted in order to perform GW calculations. In this paper we test two iterative schemes based on the quasi-particle and pseudopotential approximations for a number of inorganic semiconductors whose electronic structures are well known from experiment. Iterating just the quasi-particle energies yields a systematic, but modest overestimate of the band gaps, confirming conclusions drawn earlier for CaB_6 and YH_3. Iterating the quasi-particle wave functions as well gives rise to an imbalance between the Hartree and Fock potentials and results in bandgaps in far poorer agreement with experiment.

cond-mat.mtrl-sci↗

arXiv2005

Ab initio study of magnesium alanate, Mg(AlH4)2

Magnesium alanate Mg(AlH4)2 has recently raised interest as a potential material for hydrogen storage. We apply ab initio calculations to characterize structural, electronic and energetic properties of Mg(AlH4)2. Density functional theory calculations within the generalized gradient approximation (GGA) are used to optimize the geometry and obtain the electronic structure. The latter is also studied by quasi-particle calculations at the GW level. Mg(AlH4)2 is a large band gap insulator with a fundamental band gap of 6.5 eV. The hydrogen atoms are bonded in AlH4 complexes, whose states dominate both the valence and the conduction bands. On the basis of total energies, the formation enthalpy of Mg(AlH4)2 with respect to bulk magnesium, bulk aluminum and hydrogen gas is 0.17 eV/H2 (at T = 0). Including corrections due to the zero point vibrations of the hydrogen atoms this number decreases to 0.10 eV/H2. The enthalpy of the dehydrogenation reaction Mg(AlH4)2 -> MgH2 +2Al+3H2(g) is close to zero, which impairs the potential usefulness of magnesium alanate as a hydrogen storage material.

cond-mat.mtrl-sci↗

arXiv2005

Conductance calculations for quantum wires and interfaces: mode matching and Green functions

Landauer's formula relates the conductance of a quantum wire or interface to transmission probabilities. Total transmission probabilities are frequently calculated using Green function techniques and an expression first derived by Caroli. Alternatively, partial transmission probabilities can be calculated from the scattering wave functions that are obtained by matching the wave functions in the scattering region to the Bloch modes of ideal bulk leads. An elegant technique for doing this, formulated originally by Ando, is here generalized to any Hamiltonian that can be represented in tight-binding form. A more compact expression for the transmission matrix elements is derived and it is shown how all the Green function results can be derived from the mode matching technique. We illustrate this for a simple model which can be studied analytically, and for an Fe|vacuum|Fe tunnel junction which we study using first-principles calculations.

cond-mat.mtrl-sci↗