arXiv subjects

G. Eda

Publications and source records attributed to G. Eda.

7 recordsLinked to original sources

arXiv2024

Tunable Ultra-Strong Magnon-Magnon Coupling Approaching the Deep-Strong Regime in a van der Waals Antiferromagnet

Antiferromagnetic (AFM) magnons in van der Waals (vdW) materials offer substantial potential for applications in magnonics and spintronics. In this study, we demonstrate ultra-strong magnon-magnon coupling in the GHz regime within a vdW AFM, achieving a maximum coupling rate of 0.91. Our investigation shows the tunability of coupling strength through temperature-dependent magnetic anisotropies. We compare coupling strength values derived from the gap size from the measured spectrum with those calculated directly through the coupling parameter and show that the gap size as a measure of coupling strength is limited for the ultra-strong coupling regime. Additionally, analytical calculations show the possibility to reach the deep-strong coupling regime by engineering the magnetic anisotropy. These findings highlight the potential of vdW AFMs as a model case to study magnetisation dynamics in low-symmetry magnetic materials.

cond-mat.mes-hall↗

arXiv2023

Spin-glass states generated in a van der Waals magnet by alkali-ion intercalation

Tuning magnetic properties in layered van der Waals (vdW) materials has captured a significant attention due to the efficient control of ground-states by heterostructuring and external stimuli. Electron doping by electrostatic gating, interfacial charge transfer and intercalation is particularly effective in manipulating the exchange and spin-orbit properties, resulting in a control of Curie temperature ($T_{\text{C}}$) and magnetic anisotropy. Here, we discover an uncharted role of intercalation to generate magnetic frustration. As a model study, we intercalate Na atoms into the vdW gaps of pristine Cr$_2$Ge$_2$Te$_6$ (CGT) where generated magnetic frustration leads to emerging spin-glass states coexisting with a ferromagnetic order. A series of dynamic magnetic susceptibility measurements/analysis confirms the formation of magnetic clusters representing slow dynamics with a distribution of relaxation times. The intercalation also modifies other macroscopic physical parameters including the significant enhancement of $T_{\text{C}}$ from 66\,K to 240\,K and the switching of magnetic easy-hard axis direction. Our study identifies intercalation as a unique route to generate emerging frustrated spin states in simple vdW crystals.

cond-mat.mtrl-sci↗

arXiv2019

A spin dynamics study in layered van der Waals single crystal, Cr$_2$Ge$_2$Te$_6$

We study the magnetisation dynamics of a bulk single crystal Cr$_2$Ge$_2$Te$_6$ (CGT), by means of broadband ferromagnetic resonance (FMR), for temperatures from 60 K down to 2 K. We determine the Kittel relations of the fundamental FMR mode as a function of frequency and static magnetic field for the magnetocrystalline easy - and hard - axis. The uniaxial magnetocrystalline anisotropy constant is extracted and compared with the saturation magnetisation, when normalised with their low temperature values. The ratios show a clear temperature dependence when plotted in the logarithmic scale, which departs from the predicted Callen-Callen power law fit of a straight line, where the scaling exponent \textit{n}, $K_{u}(T) \propto [M_s(T)/M_s(2$ K$)]^n$, contradicts the expected value of 3 for uniaxial anisotropy. Additionally, the spectroscopic g-factor for both the magnetic easy - and hard - axis exhibits a temperature dependence, with an inversion between 20 K and 30 K, suggesting an influence by orbital angular momentum. Finally, we qualitatively discuss the observation of multi-domain resonance phenomena in the FMR spectras, at magnetic fields below the saturation magnetisation.

cond-mat.mtrl-sci↗

arXiv2016

Characterization of the second- and third-order nonlinear optical susceptibilities of monolayer MoS$_2$ using multiphoton microscopy

We report second- and third-harmonic generation in monolayer MoS$_\mathrm{2}$ as a tool for imaging and accurately characterizing the material's nonlinear optical properties under 1560 nm excitation. Using a surface nonlinear optics treatment, we derive expressions relating experimental measurements to second- and third-order nonlinear sheet susceptibility magnitudes, obtaining values of $|\chi_s^{(2)}|=2.0\times10^{-20}$ m$^2$ V$^{-1}$ and for the first time for monolayer MoS$_\mathrm{2}$, $|\chi_s^{(3)}|=1.7\times10^{-28}$ m$^3$ V$^{-2}$. These sheet susceptibilities correspond to effective bulk nonlinear susceptibility values of $|\chi_{b}^{(2)}|=2.9\times10^{-11}$ m V$^{-1}$ and $|\chi_{b}^{(3)}|=2.4\times10^{-19}$ m$^2$ V$^{-2}$, accounting for the sheet thickness. Experimental comparisons between MoS$_\mathrm{2}$ and graphene are also performed, demonstrating $\sim$3.4 times stronger third-order sheet nonlinearity in monolayer MoS$_\mathrm{2}$, highlighting the material's potential for nonlinear photonics in the telecommunications C band.

cond-mat.mes-hall↗

arXiv2015

Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS$_2$

Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak anti-localization in highly n-doped monolayer MoS2. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. We find that the spin lifetime is inversely proportional to momentum relaxation time, indicating that spin relaxation occurs via Dyakonov-Perel mechanism.

cond-mat.mes-hall↗

arXiv2014

Electronic transport in graphene-based heterostructures

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis show that these crystals have improved surface roughness (root mean square (rms) value of only ~ 0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (~ 38,000 cm2/Vs at RT), followed by G/MoS2 (~ 10,000 cm2/Vs) and G/GaSe (~ 2,200 cm2/Vs). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

cond-mat.mes-hall↗

arXiv2014

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.

cond-mat.mes-hall↗