arXiv subjects

G. G. Vasques

Publications and source records attributed to G. G. Vasques.

4 recordsLinked to original sources

arXiv2026

Colossal Terahertz Magnetoresistance from Magnetic Polarons in EuZn$_2$P$_2$

Magnetic polarons can generate colossal magnetoresistance in magnetic semiconductors, yet their terahertz electrodynamics remain largely unexplored. Here we report magneto-terahertz spectroscopy of the Eu-based Zintl antiferromagnet EuZn$_2$P$_2$. The low-frequency conductivity shows pronounced non-Drude behavior consistent with an evolution from isolated to overlapping magnetic polarons upon cooling. The polaron relaxation time reaches a maximum near the Néel temperature at zero field and exhibits a strong magnetic-field dependence. This polaron-driven reshaping of the conductivity leads to a strongly frequency-dependent magnetoresistance that becomes colossal in the terahertz range, reaching about 90~\% at 1.5~THz, roughly three times larger than the zero-frequency limit value. These results demonstrate that magnetic polarons strongly govern the low-energy electrodynamics and highlight the sensitivity of terahertz spectroscopy to polaronic magnetotransport in correlated magnetic semiconductors.

cond-mat.str-el↗

arXiv2025

Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn$_2$P$_2$

The effect of Ga substitution on the electronic, magnetic, and low-energy responses of the Zintl phase EuZn$_2$P$_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time-domain spectroscopy (THz-TDS). Incorporating Ga into EuZn$_2$P$_2$ (EuZn$_{1.8}$Ga$_{0.2}$P$_2$) reduces the electrical resistivity, indicating enhanced free-carrier density and a narrowed semiconducting gap. ESR confirms the persistence of Eu$^{2+}$ moments while showing a crossover from a Lorentzian to a Dysonian lineshape, consistent with reduced skin depth, increased carrier density, and the emergence of diffusive contributions. Ga-substituted compound display pronounced negative magnetoresistance linked to magnetic-polaron formation. THz-TDS reveals strong low-frequency absorption and a notable enhancement of the Drude conductivity in the substituted material, together with an increased carrier scattering time and enhanced carrier-density--to--effective-mass ratio. These results demonstrate that Ga substitution tunes charge transport, carrier dynamics, and short-range magnetic correlations in EuZn$_2$P$_2$, establishing EuZn$_{1.8}$Ga$_{0.2}$P$_2$ as a promising platform for engineering correlated narrow-gap magnetic semiconductors with enhanced electronic and spin-dependent functionalities.

cond-mat.mtrl-sci↗

arXiv2025

Pressure tuning of putative quantum criticality on YbV6Sn6

YbV$_6$Sn$_6$ is a recently discovered heavy-fermion compound that orders at T$_N\approx 0.4$ K and exhibits a magnetic field-tuned quantum critical point at $H \approx 10$ kOe. In this work, we have grown YbV$_6$Sn$_6$ single crystals by the self-flux method, to investigate their physical properties at ambient pressure and their electrical transport properties under hydrostatic pressure. At higher temperatures, we observed a decrease in the Kondo temperature, accompanied by the appearance of a local minimum followed by a local maximum, associated with the onset of the coherent Kondo regime. Power law fitting at low temperatures indicated a recovery of the Fermi-liquid regime for pressures below 1 GPa. Above 1 GPa, a reentrance of non-Fermi-liquid behavior is suggested by a decrease in the exponent $n$, accompanied by a substantial increase in the parameter $A$, indicating the approach of a new quantum criticality tuned by hydrostatic pressure. The broad range of interactions present in YbV$_6$Sn$_6$, including RKKY, crystalline electric field (CEF), and Kondo lattice effects, appears to lead to a complex phase diagram. We present a putative phase diagram featuring double quantum criticality tuned by both magnetic field and hydrostatic pressure.

cond-mat.str-el↗

arXiv2025

Spin Dynamics and Light-Induced Effects in EuZn$_2$P$_2$

The magnetic spin dynamics and optical properties of EuZn$_2$P$_2$ are studied. Single crystals grown by the Sn-flux method crystallize in the $P\overline{3}m1$ (No.~164) space group and order antiferromagnetically at $T_N=23.5$~K. $^{151}$Eu Mössbauer spectroscopy confirms the presence of the Eu$^{2+}$ oxidation state only and the magnetic moment angle relative to the $c$-axis is $θ=46(3)$\textdegree. Temperature-dependent electron spin resonance (ESR) measurements reveal that spin-spin interactions predominantly govern the spin relaxation mechanisms, as evidenced by the linewidth behavior ($ΔH$). Positive $g$-shifts ($Δg)$ for $H \parallel ab$ indicate the presence of local electron polarization. The ESR data support the formation of anisotropic magnetic polarons, which trap spin carriers and contribute to increased electrical resistance. Angular-dependent ESR spectra at room temperature display anisotropic behavior in both $Δg(ϕ)$ and $ΔH(ϕ)$, with a dominant three-dimensional component $C_{3D}$, indicative of robust interlayer coupling and antiferromagnetic fluctuations. Under light illumination, a small broadening of $ΔH$ is observed. Furthermore, a photovoltaic effect is identified in EuZn$_2$P$_2$, with photodetector performance metrics suggesting promising capabilities for future optoelectronic devices.

cond-mat.str-el↗