arXiv subjects

G. Gomila

Publications and source records attributed to G. Gomila.

16 recordsLinked to original sources

arXiv2021

Depth mapping of metallic nanowire polymer nanocomposites by scanning dielectric microscopy

Polymer nanocomposite materials based on metallic nanowires are widely investigated as transparent and flexible electrodes or as stretchable conductors and dielectrics for biosensing. Here we show that Scanning Dielectric Microscopy (SDM) can map the depth distribution of metallic nanowires within the nanocomposites in a non-destructive way. This is achieved by a quantitative analysis of sub-surface electrostatic force microscopy measurements with finite-element numerical calculations. As an application we determined the three-dimensional spatial distribution of around 50 nm diameter silver nanowires in 100 - 250 nm thick gelatin films. The characterization is done both under dry ambient conditions, where gelatin shows a relatively low dielectric constant, epsilon around 5, and under humid ambient conditions, where its dielectric constant increases up to epsilon around 14. The present results show that SDM can be a valuable non-destructive subsurface characterization technique for nanowire-based nanocomposite materials, which can contribute to the optimization of these materials for applications in fields such as wearable electronics, solar cell technologies or printable electronics.

cond-mat.mes-hall↗

arXiv2018

Anomalously low dielectric constant of confined water

The dielectric constant of interfacial water has been predicted to be smaller than that of bulk water (= 80) because the rotational freedom of water dipoles is expected to decrease near surfaces, yet experimental evidence is lacking. We report local capacitance measurements for water confined between two atomically-flat walls separated by various distances down to 1 nm. Our experiments reveal the presence of an interfacial layer with vanishingly small polarization such that its out-of-plane dielectric constant is only approximately 2. The electrically dead layer is found to be two to three molecules thick. These results provide much needed feedback for theories describing water-mediated surface interactions and behavior of interfacial water, and show a way to investigate the dielectric properties of other fluids and solids under extreme confinement.

cond-mat.mes-hall↗

arXiv2005

Modelization of Thermal Fluctuations in G Protein-Coupled Receptors

We simulate the electrical properties of a device realized by a G protein coupled receptor (GPCR), embedded in its membrane and in contact with two metallic electrodes through which an external voltage is applied. To this purpose, recently, we have proposed a model based on a coarse graining description, which describes the protein as a network of elementary impedances. The network is built from the knowledge of the positions of the C-alpha atoms of the amino acids, which represent the nodes of the network. Since the elementary impedances are taken depending of the inter-nodes distance, the conformational change of the receptor induced by the capture of the ligand results in a variation of the network impedance. On the other hand, the fluctuations of the atomic positions due to thermal motion imply an impedance noise, whose level is crucial to the purpose of an electrical detection of the ligand capture by the GPCR. Here, in particular, we address this issue by presenting a computational study of the impedance noise due to thermal fluctuations of the atomic positions within a rhodopsin molecule. In our model, the C-alpha atoms are treated as independent, isotropic, harmonic oscillators, with amplitude depending on the temperature and on the position within the protein (alpha-helix or loop). The relative fluctuation of the impedance is then calculated for different temperatures.

q-bio.QM↗

arXiv2004

Shot Noise in Linear Macroscopic Resistors

We report on a direct experimental evidence of shot noise in a linear macroscopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffusive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. Present results show that neither potential barriers nor the absence of inelastic scattering are necessary to observe shot noise in electronic devices.

cond-mat.mtrl-sci↗

arXiv2004

Fluctuations of Complex Networks: Electrical Properties of Single Protein Nanodevices

We present for the first time a complex network approach to the study of the electrical properties of single protein devices. In particular, we consider an electronic nanobiosensor based on a G-protein coupled receptor. By adopting a coarse grain description, the protein is modeled as a complex network of elementary impedances. The positions of the alpha-carbon atoms of each amino acid are taken as the nodes of the network. The amino acids are assumed to interact electrically among them. Consequently, a link is drawn between any pair of nodes neighboring in space within a given distance and an elementary impedance is associated with each link. The value of this impedance can be related to the physical and chemical properties of the amino acid pair and to their relative distance. Accordingly, the conformational changes of the receptor induced by the capture of the ligand, are translated into a variation of its electrical properties. Stochastic fluctuations in the value of the elementary impedances of the network, which mimic different physical effects, have also been considered. Preliminary results concerning the impedance spectrum of the network and its fluctuations are presented and discussed for different values of the model parameters.

q-bio.MN↗

arXiv2002

Shot-noise anomalies in nondegenerate elastic diffusive conductors

We present a theoretical investigation of shot-noise properties in nondegenerate elastic diffusive conductors. Both Monte Carlo simulations and analytical approaches are used. Two new phenomena are found: (i) the display of enhanced shot noise for given energy dependences of the scattering time, and (ii) the recovery of full shot noise for asymptotic high applied bias. The first phenomenon is associated with the onset of negative differential conductivity in energy space that drives the system towards a dynamical electrical instability in excellent agreement with analytical predictions. The enhancement is found to be strongly amplified when the dimensionality in momentum space is lowered from 3 to 2 dimensions. The second phenomenon is due to the suppression of the effects of long range Coulomb correlations that takes place when the transit time becomes the shortest time scale in the system, and is common to both elastic and inelastic nondegenerate diffusive conductors. These phenomena shed new light in the understanding of the anomalous behavior of shot noise in mesoscopic conductors, which is a signature of correlations among different current pulses.

cond-mat.mes-hall↗

arXiv2002

Unipolar transport and shot noise in metal-semiconductor-metal structures

We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed to study the whole range of carrier injection conditions going from low level injection, where the structure behaves as a linear resistor, to high level injection, where the structure behaves as a space charge limited diode. We show that these structures display shot noise at the highest voltages. Remarkably the crossover from Nyquist noise to shot noise exhibits a complicate behavior with increasing current where an initial square root dependence (double thermal noise) is followed by a cubic power law.

cond-mat.stat-mech↗

arXiv2002

Size effects on generation recombination noise

We carry out an analytical theory of generation-recombination noise for a two level resistor model which goes beyond those presently available by including the effects of both space charge fluctuations and diffusion current. Finite size effects are found responsible for the saturation of the low frequency current spectral density at high enough applied voltages. The saturation behaviour is controlled essentially by the correlations coming from the long range Coulomb interaction. It is suggested that the saturation of the current fluctuations for high voltage bias constitutes a general feature of generation-recombination noise.

cond-mat.stat-mech↗

arXiv2002

Semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor strucutres: relevance of Pauli and long range Coulomb correlations

We work out a semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor structures aiming at studying two fundamental physical correlations coming from Pauli exclusion principle and long range Coulomb interaction. The theory provides a unifying scheme which, in addition to the current-voltage characteristics, describes the suppression of shot noise due to Pauli and Coulomb correlations in the whole range of system parameters and applied bias. The whole scenario is summarized by a phase diagram in the plane of two dimensionless variables related to the sample length and contact chemical potential. Here different regions of physical interest can be identified where only Coulomb or only Pauli correlations are active, or where both are present with different relevance. The predictions of the theory are proven to be fully corroborated by Monte Carlo simulations.

cond-mat.mes-hall↗

arXiv2001

Fractional exclusion statistics and shot noise in ballistic conductors

We study the noise properties of ballistic conductors with carriers satisfying fractional exclusion statistics. To test directly the nature of exclusion statistics we found that systems under weakly degenerate conditions should be considered. Typical of these systems is that the chemical potential, $μ$ is in the thermal range $|μ|<3k_{B}T$. In these conditions the noise properties under current saturation are found to depend upon the statistical parameter $g$, displaying suppressed shot noise for $1/2\leq g\leq 1$, and enhanced shot noise for $0<g<1/2$, according to the attractive or repulsive nature of the carrier exclusion statistics.

cond-mat.str-el↗

arXiv2000

Shot-noise suppression in Schottky barrier diodes

We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes negligible the effects of the Coulomb interaction on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the cross-over between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot-noise. Similar ideas can be used to interpret the noise properties of others semiconductor devices.

cond-mat.stat-mech↗

arXiv2000

Anomalous crossover between thermal and shot noise in macroscopic diffusive conductors

We predict the existence of an anomalous crossover between thermal and shot noise in macroscopic diffusive conductors. We first show that, besides thermal noise, these systems may also exhibit shot noise due to fluctuations of the total number of carriers in the system. Then we show that at increasing currents the crossover between the two noise behaviors is anomalous, in the sense that the low frequency current spectral density displays a region with a superlinear dependence on the current up to a cubic law. The anomaly is due to the non-trivial coupling in the presence of the long range Coulomb interaction among the three time scales relevant to the phenomenon, namely, diffusion, transit and dielectric relaxation time.

cond-mat.stat-mech↗

arXiv1997

Stochastic Resonance in Noisy Non-Dynamical Systems

We have analyzed the effects of the addition of external noise to non-dynamical systems displaying intrinsic noise, and established general conditions under which stochastic resonance appears. The criterion we have found may be applied to a wide class of non-dynamical systems, covering situations of different nature. Some particular examples are discussed in detail.

cond-mat↗

arXiv1997

Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions

A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenomenological procedure sketched here. The resulting boundary conditions, which incorporate only physically well-defined parameters, are used to study the classical unipolar drift-diffusion model for the Gunn effect. The analysis of its stationary solutions reveals the presence of bistability and hysteresis for a certain range of contact parameters. Several types of Gunn effect are predicted to occur in the model, when no stable stationary solution exists, depending on the value of the parameters of the injecting contact appearing in the boundary condition. In this way, the critical role played by contacts in the Gunn effect is clearly stablished.

cond-mat.stat-mech↗

arXiv1997

Asymptotic analysis of the Gunn effect with realistic boundary conditions

A general asymptotic analysis of the Gunn effect in n-GaAs under general boundary conditions for metal-semiconductor contacts is presented. Depending on the parameter values in the boundary condition of the injecting contact, different types of waves mediate the Gunn effect. The periodic current oscillation typical of the Gunn effect may be caused by moving charge-monopole accumulation or depletion layers, or by low or high-field charge-dipole solitary waves. A new instability caused by multiple shedding of (low field) dipole waves is found. In all cases the shape of the current oscillation is described in detail: we show the direct relationship between its major features (maxima, minima, plateau's, ...) and several critical currents (which depend on the values of the contact parameters). Our results open the possibility of measuring contact parameters from the analysis of the shape of the current oscillation.

cond-mat.stat-mech↗

arXiv1996

Non-equilibrium thermodynamics of thermionic emission processes in abrupt semiconductor junctions, including the effects of surface states

The methods of non-equilibrium thermodynamics of systems with an interface have been applied to the study of thermionic emission processes in abrupt semiconductor junctions, including the effects of surface states . Our analysis covers different situations of interest, concerning unipolar and bipolar systems, either degenerate or not, with or without interface states and under steady and non-steady conditions. In this way, a complete phenomenological modelling of thermionic emission-interface states processes has been proposed, overcoming some of the inherent limititations of the currently existing models.

cond-mat↗