arXiv subjects

G. Koblmüller

Publications and source records attributed to G. Koblmüller.

10 recordsLinked to original sources

arXiv2026

Lasing from SOI-integrated GaAsSb nanowires via resonator-driven optical feedback

Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical implementation is often limited by broad emission linewidths and poor frequency stability resulting from weak optical feedback. Here, we integrate individual GaAsSb NWs by transfer-printing onto silicon-on-insulator (SOI) racetrack resonators to realize optical feedback at silicon-transparent wavelengths. Finite-difference-time-domain simulations reveal efficient coupling between the hybrid NW-waveguide mode and the fundamental TE resonator mode, with calculated cavity Q-factors exceeding 10$^4$. Experimentally, we observe feedback-induced lasing emission at a low threshold (P$_{th}$) of 8.6 $\pm$ 1.8 $μ$J/cm$^2$. Compared to identical NW lasers without SOI resonator, the linewidth is reduced by more than a factor of four at 3P$_{th}$ and remains stable below 1.8 meV up to 5P$_{th}$. Our results demonstrate NW-based light sources on SOI and show that tailored resonator designs enable improved linewidth control and frequency stabilization.

physics.app-ph↗

arXiv2026

Ultra-high-vacuum cluster tool for epitaxial synthesis and optical spectroscopy of reactive 2D materials

The large-area synthesis of high-crystalline-quality two-dimensional (2D) materials is at the core of novel material integration for semiconductor technology. This effort relies on developing fabrication and characterization techniques that can uncover the material's intrinsic properties by preserving its pristine conditions. In this article, we present an all ultra-high-vacuum cluster for the growth using molecular beam epitaxy of 2D semiconductors that are unstable under ambient conditions and optical spectroscopy using low temperature (20 K) photoluminescence and Raman scattering. The optical chamber of the setup provides micrometer scale spatial resolution and the ability to scan the entire wafer. The performance of its setup regarding spatial resolution, temperature control over a temperature range of 20-300 K using a closed-cycle cryostat and long-term preservation are demonstrated using as-grown post-transition metal monochalcogenides. Furthermore, we introduce a deconvolution-based algorithm to recover spatial information under vibration using a system-specific point-spread function. This enables in situ analysis of the structural and optoelectronic properties of as-grown materials in their pristine form, providing rich and reproducible feedback for both fundamental studies and the optimization of scalable 2D material growth toward integration in advanced devices.

cond-mat.mtrl-sci↗

arXiv2026

Electrically and optically active charge carrier traps in silicon-doped few-layer GaSe

Understanding defects in atomically thin van der Waals (vdW) semiconductors is essential for advancing their use in next-generation optoelectronic and photovoltaic devices. Here, we apply a combination of various impedance spectroscopy techniques to two-dimensional (2D) vdW GaSe doped with silicon (Si) to reconstruct deep trap states across the full bandgap. Deep-level transient spectroscopy reveals three distinct deep states 0.31, 0.88, and 1.40 eV below the conduction band edge. Complementary deep-level optical spectroscopy and photocapacitance measurements identify three deep states at 1.4 and 1.8 eV below the conduction band edge, and 2.0 eV above the valence band edge, with thermal admittance spectroscopy providing additional verification and further resolving two trap states, at 0.16 eV above the valence band edge and at 0.26 eV below the conduction band edge. By comparing the experimentally extracted ionization energies with the predictions of density functional theory, our results attribute these trap states primarily to Si-related defects and metal vacancies. This work presents a comprehensive defect map of Si-doped GaSe, providing critical insights into carrier trapping mechanisms that are essential for optimizing the design of 2D material-based devices for industrial applications.

cond-mat.mtrl-sci↗

arXiv2025

Unveiling the growth mode diagram of GaSe on sapphire

The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in-situ reflection high-energy electron diffraction (RHEED), in-situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530-650 °C) and Se/Ga flux ratio (5-110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 0.371$\pm$0.001 nm and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials.

cond-mat.mtrl-sci↗

arXiv2024

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN

Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition.

physics.app-ph↗

arXiv2024

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition.

cond-mat.mtrl-sci↗

arXiv2017

Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions

We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($Δ_N$) close to the Al gap ($Δ_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $Δ_N\approxΔ_0/2$ at NW conductances $\sim2e^2/h$, which is interpreted in terms of carrier density dependent reduction of the Al/InAs interface transparency. We demonstrate that the experimental behavior of $Δ_N$ is closely reproduced by a model with shallow potential barrier at the Al/InAs interface.

cond-mat.mes-hall↗

arXiv2016

Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser

The ability to generate phase-stabilised trains of ultrafast laser pulses by mode-locking underpins photonics research in fields such as precision metrology and spectroscopy. However, the complexity of conventional mode-locked laser systems, combined with the need for a mechanism to induce active or passive phase locking between resonator modes, has hindered their realisation at the nanoscale. Here, we demonstrate that GaAs-AlGaAs nanowire lasers are capable of emitting pairs of phase-locked picosecond laser pulses when subject to non-resonant pulsed optical excitation with a repetition frequency up to ~200GHz. By probing the two-pulse interference that emerges within the homogeneously broadened laser emission, we show that the optical phase is preserved over timescales extending beyond ~30ps, much longer than the emitted laser pulse duration (~2ps). Simulations performed by solving the optical Bloch equations produce good quantitative agreement with experiments, revealing how the phase information is stored in the gain medium close to transparency. Our results open the way to applications such as on-chip, ultra-sensitive Ramsey comb spectroscopy.

cond-mat.mes-hall↗

arXiv2014

Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO$_{3}$-GaAs hybrid

We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a LiNbO$_{3}$-GaAs hybrid device. The surface acoustic wave is excited directly on the strong piezoelectric LiNbO$_{3}$ onto which a GaAs-based p-i-n photodiode containing a single layer of quantum dots was epitaxially transferred. We demonstrate dynamic spectral tuning with bandwidths exceeding 3 meV of single quantum dot emission lines due to deformation potential coupling. The center energy of the dynamic spectral oscillation can be independently programmed simply by setting the bias voltage applied to the diode.

cond-mat.mes-hall↗

arXiv2012

All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current

The ability to control and exploit quantum coherence and entanglement drives research across many fields ranging from ultra-cold quantum gases to spin systems in condensed matter. Transcending different physical systems, optical approaches have proven themselves to be particularly powerful, since they profit from the established toolbox of quantum optical techniques, are state-selective, contact-less and can be extremely fast. Here, we demonstrate how a precisely timed sequence of monochromatic ultrafast (~2-5 ps) optical pulses, with a well defined polarisation can be used to prepare arbitrary superpositions of exciton spin states in a semiconductor quantum dot, achieve ultrafast control of the spin-wavefunction without an applied magnetic field and make high fidelity read-out the quantum state in an arbitrary basis simply by detecting a strong (~2-10$ pA) electric current flowing in an external circuit. The results obtained show that the combined quantum state preparation, control and read-out can be performed with a near-unity (>97%) fidelity. Our methods are fully applicable to other quantum systems and have strong potential for scaling to more complex systems such as molecules and spin-chains.

cond-mat.mes-hall↗