arXiv subjects

G. M. Dalpian

Publications and source records attributed to G. M. Dalpian.

6 recordsLinked to original sources

arXiv2025

Exchange field induced symmetry breaking in quantum hexaborides

Symmetry breaking (SB) has proven to be a powerful approach for describing quantum materials: strong correlation, mass renormalization, and complex phase transitions are among the phenomena that SB can capture, even when coupled to a mean-field-like theory. Traditionally, corrective schemes were required to account for these effects; however, SB has emerged as an alternative that can also successfully describe the intricate physics of quantum materials. Here, we explore spin SB on EuB6 and SmB6 and how its relation to the exchange field can determine onsite properties, depending on the type of symmetry breaking. Using spin-polarized Density Functional Theory (DFT) calculations with the r2SCAN functional, we systematically compare four magnetic configurations, one totally symmetric - non-magnetic (NM) configuration - and three with different types of symmetry breaking: ferromagnetic (FM), antiferromagnetic (AFM) and a paramagnetic (PM) configuration - modeled through a Special Quasirandom Structure (SQS) method - to capture local symmetry-breaking effects. Our results show that the PM configuration produces distinct magnetic environments for the rare-earth atoms, leading to different exchange fields. These, in turn, induce symmetry breaking in the electronic and magnetic properties of Eu and Sm. Those results provide an alternative explanation for the experimental results on both materials, EuB6 and SmB6, where X-ray Absorption Spectroscopy (XAS) and X-ray Absorption Near Edge Structure (XANES) measurements suggest the presence of multiple atomic environments, previously attributed to a mixed-valence configuration.

cond-mat.mtrl-sci↗

arXiv2016

Emergence of competing magnetic interactions induced by Ge doping in the semiconductor FeGa3

FeGa$_3$ is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground states that are not well understood. In this work, we have performed a joint theoretical and experimental study of FeGa$_{3-x}$Ge$_x$ using Density Functional Theory and magnetic susceptibility measurements. For low Ge concentrations we observe the formation of localized moments on some Fe atoms and, as the dopant concentration increases, a more delocalized magnetic behavior emerges. The magnetic configuration strongly depends on the dopant distribution, leading even to the appearance of antiferromagnetic interactions in certain configurations.

cond-mat.str-el↗

arXiv2016

Charge storage in oxygen deficient phases of TiO$_2$: defect Physics without defects

Defects in semiconductors can exhibit multiple charge states, which can be used for charge storage applications. Here we consider such charge storage in a series of oxygen deficient phases of TiO$_2$, known as Magnéli phases. These Ti$_n$O$_{2n-1}$ Magnéli phases present well-defined crystalline structures, i. e., their deviation from stoichiometry is accommodated by changes in space group as opposed to point defects. We show that these phases exhibit intermediate bands with the same electronic quadruple donor transitions akin to interstitial Ti defect levels in TiO$_2$-rutile. Thus, the Magnéli phases behave as if they contained a very large pseudo-defect density: $\frac{1}{2}$ per formula unit Ti$_n$O$_{2n-1}$. Depending on the Fermi Energy the whole material will become charged. These crystals are natural charge storage materials with a storage capacity that rivals the best known supercapacitors.

cond-mat.mtrl-sci↗

arXiv2015

DFT+U simulation of the Ti${}_4$O${}_7$-TiO${}_2$ interface

The formation of conducting channels of Ti${}_4$O${}_7$ inside TiO${}_2$-based memristors is believed to be the origin for the change in electric resistivity of these devices. While the properties of the bulk materials are reasonably known, the interface between them has not been studied up to now mostly due to their different crystalline structures. In this work we present a way to match the interfaces between TiO${}_2$ and Ti${}_4$O${}_7$ and subsequently the band offset between these materials is obtained from density functional theory based calculations. The results show that while the valence band is located at the Ti${}_4$O${}_7$, the conduction band is found at the TiO${}_2$ structure, resulting into a type II interface. In this case, the Ti${}_4$O${}_7$ would act as a donor to the TiO${}_2$ matrix.

cond-mat.mtrl-sci↗

arXiv2014

A study of Ti${}_n$O${}_{2n-1}$ Magnéli phases using Density Functional Theory

Defects in the rutile TiO${}_2$ structures have been extensively studied, but the intrinsic defects of the oxygen deficient Ti${}_n$O${}_{2n-1}$ phases have not been given the same amount of consideration. Those structures, known as Magnéli phases, are characterized by the presence of ordered planes of oxygen vacancies, also known as shear-planes, and it has been shown that they form conducting channels inside TiO-based memristor devices. Memristors are excellent candidates for a new generation of memory devices in the electronics industry. In this paper we present DFT-based electronic structure calculations for Ti${}_n$O${}_{2n-1}$ Magnéli structures using PBESol+U ($0 \leq U \leq 5$ eV) and HSE functionals, showing that intrinsic defects present in these structures are responsible for the appearance of states inside the bandgap, which can act as intrinsic dopants for the enhanced conductivity of TiO${}_2$ memristive devices.

cond-mat.mtrl-sci↗

arXiv2009

Surface magnetization in non-doped ZnO nanostructures

We have investigated the magnetic properties of non-doped ZnO nanostructures by using {\it ab initio} total energy calculations. Contrary to many proposals that ferromagnetism in non-doped semiconductors should be induced by intrinsic point defects, we show that ferromagnetism in nanostructured materials should be mediated by extended defects such as surfaces and grain boundaries. This kind of defects create delocalized, spin polarized states that should be able to warrant long-range magnetic interactions.

cond-mat.mtrl-sci↗