arXiv subjects
Publications and source records attributed to G. N. Mikhailova.
Elongated gold nanoparticles obtained by laser ablation in liquid demonstrate ferromagnetic behavior in external magnetic field.
Influence of permanent magnetic field up to 7.5 T on plasma emission and laser-assisted Au nanoparticles fragmentation in water is experimentally studied. It is found that presence of magnetic field causes the breakdown plasma emission to start earlier regarding to laser pulse. Field presence also accelerates the fragmentation of nanoparticles down to a few nanometers. Dependence of Au NPs fragmentation rate in water on magnetic field intensity is investigated. The results are discussed on the basis of laser-induced plasma interaction with magnetic field.
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed.
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic mechanisms responsible for the enhancement will be discussed. Application of BWO spectrometers for obtaining precise quantitative information on of dielectric properties at THz-subTHz frequencies of semiconducting layers and structures is demonstrated by presenting the temperature dependences of dielectric characteristics of a commercial silicon wafer at frequencies 0.3 to 1.2 THz and temperatures 5K-300K.