arXiv subjects

G. Profeta

Publications and source records attributed to G. Profeta.

47 records · Page 3Linked to original sources

arXiv2007

Triangular Mott-Hubbard Insulator Phases of Sn/Si(111) and Sn/Ge(111) Surfaces

The ground state of Sn/Si(111) and Sn/Ge(111) surface $α$-phases is reexamined theoretically, based on $ab-initio$ calculations where correlations are approximately included through the orbital dependence of the Coulomb interaction (in the local density + Hubbard U approximation). The effect of correlations is to destabilize the vertical buckling in Sn/Ge(111) and to make the surface magnetic, with a metal-insulator transition for both systems. This signals the onset of a stable narrow gap Mott-Hubbard insulating state, in agreement with very recent experiments. Antiferromagnetic exchange is proposed to be responsible for the observed $Γ$-point photoemission intensity, as well asfor the partial metallization observed above above 60 K in Sn/Si(111). Extrinsic metallization of Sn/Si(111) by, $e.g.$ alkali doping, could lead to a novel 2D triangular superconducting state of this and similar surfaces.

cond-mat.str-el↗

arXiv2005

Superconductivity in lithium, potassium and aluminium under extreme pressure: A first-principles study

Extreme pressure strongly affects the superconducting properties of ``simple'' elemental metals, like Li, K and Al. Pressure induces superconductivity in Li (as high as 17 K), while suppressing it in Al. We report first-principles investigations of the superconducting properties of dense Li, K and Al based on a recently proposed, parameter-free, method. Our results show an unprecedented agreement with experiments, assess the predictive power of the method over a wide range of densities and electron-phonon couplings, and provide predictions for K, where no experiments exist so far. More importantly, our results help uncovering the physics of the different behaviors of Li and Al in terms of phonon softening and Fermi surface nesting in Li.

cond-mat.supr-con↗

arXiv2005

Ab-initio theory of superconductivity - I: Density functional formalism and approximate functionals

A novel approach to the description of superconductors in thermal equilibrium is developed within a formally exact density-functional framework. The theory is formulated in terms of three ``densities'': the ordinary electron density, the superconducting order parameter, and the diagonal of the nuclear N-body density matrix. The electron density and the order parameter are determined by Kohn-Sham equations that resemble the Bogoliubov-de Gennes equations. The nuclear density matrix follows from a Schroedinger equation with an effective N-body interaction. These equations are coupled to each other via exchange-correlation potentials which are universal functionals of the three densities. Approximations of these exchange-correlation functionals are derived using the diagrammatic techniques of many-body perturbation theory. The bare Coulomb repulsion between the electrons and the electron-phonon interaction enter this perturbative treatment on the same footing. In this way, a truly ab-initio description is achieved which does not contain any empirical parameters.

cond-mat.supr-con↗

arXiv2005

Ab-initio theory of superconductivity - II: Applications to elemental metals

The density functional theory for superconductors developed in the preceding article [cond-mat/0408685] is applied to the calculation of superconducting properties of several elemental metals. In particular, we present results for the transition temperature, for the gap at zero temperature, and for thermodynamic properties like the specific heat. We obtain an unprecedented agreement with experimental results. Superconductors both with strong and weak electron-phonon coupling are equally well described. This demonstrates that, as far as conventional superconductivity is concerned, the first-principles prediction of superconducting properties is feasible.

cond-mat.supr-con↗

arXiv2005

Superconducting properties of MgB2 from first principles

Solid MgB$_2$ has rather interesting and technologically important properties, such as a very high superconducting transition temperature. Focusing on this compound, we report the first non-trivial application of a novel density-functional-type theory for superconductors, recently proposed by the authors. Without invoking any adjustable parameters, we obtain the transition temperature, the gaps, and the specific heat of MgB$_2$ in very good agreement with experiment. Moreover, our calculations show how the Coulomb interaction acts differently on s and p states, thereby stabilizing the observed superconducting phase.

cond-mat.supr-con↗

arXiv2002

Disproportionation Phenomena on Free and Strained Sn/Ge(111) and Sn/Si(111) Surfaces

Distortions of the $\sqrt3\times\sqrt3$ Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a disproportionation of an integer pseudocharge, $Q$, related to the surface band occupancy. A novel understanding of the $(3\times3)$-1U (``1 up, 2 down'') and 2U (``2 up, 1 down'') distortions of Sn/Ge(111) is obtained by a theoretical study of the phase diagram under strain. Positive strain keeps the unstrained value Q=3 but removes distorsions. Negative strain attracts pseudocharge from the valence band causing first a $(3\times3)$-2U distortion (Q=4) on both Sn/Ge and Sn/Si, and eventually a $(\sqrt3\times\sqrt3)$-3U (``all up'') state with Q=6. The possibility of a fluctuating phase in unstrained Sn/Si(111) is discussed.

cond-mat.mtrl-sci↗

arXiv2001

Role of structural relaxations, chemical substitutions and polarization fields on the potential line-up in [0001] wurtzite GaN/Al systems

First-principles full-potential linearized augmented plane wave (FLAPW) calculations are performed to clarify the role of the interface geometry on piezoelectric fields and on potential line-ups at the [0001]-wurtzite and [111]-zincblende GaN/Al junctions. The electric fields (polarity and magnitude) are found to be strongly affected by atomic relaxations in the interface region. A procedure is tested to evaluate the Schottky barrier in the presence of electric fields and used to show that their effect is quite small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, giving very good agreement with experimental values for the barrier. Stimulated by the complexity of the problem, we disentangle chemical and structural effects on the relevant properties (such as the potential discontinuity and electric fields) by studying auxiliary unrelaxed nitride/metal systems. Focusing on simple electronegativity arguments, we outline the leading mechanisms that result in the final values of the electric fields and Schottky barriers in these ideal interfaces. Finally, the transitivity rule in the presence of two inequivalent junctions is proved to give reliable results.

cond-mat.mtrl-sci↗

arXiv2001

Electronic and structural properties of superconducting MgB$_2$, CaSi$_2$ and related compounds

We report a detailed study of the electronic and structural properties of the 39K superconductor \mgbtwo and of several related systems of the same family, namely \mgalbtwo, \bebtwo, \casitwo and \cabesi. Our calculations, which include zone-center phonon frequencies and transport properties, are performed within the local density approximation to the density functional theory, using the full-potential linearized augmented plane wave (FLAPW) and the norm-conserving pseudopotential methods. Our results indicate essentially three-dimensional properties for these compounds; however, strongly two-dimensional $σ$-bonding bands contribute significantly at the Fermi level. Similarities and differences between \mgbtwo and \bebtwo (whose superconducting properties have not been yet investigated) are analyzed in detail. Our calculations for \mgalbtwo show that metal substitution cannot be fully described in a rigid band model. \casitwo is studied as a function of pressure, and Be substitution in the Si planes leads to a stable compound similar in many aspects to diborides.

cond-mat.supr-con↗

arXiv2001

Mechanism of formation of a 2D binary alloy

Direct comparison of scanning tunneling microscopy and high resolution core level photo-emission experiments provides a rationale for the mechanism of formation of a two dimensional (2D) binary alloy (1/3 mono-layer (ML) Sn(1- x)Six/Si(111)-\sqrt3X\sqrt3R30). In contrast with recent theoretical predictions, the pure metal surface (x=0) results partitioned into two classes (2/9 ML and 1/9 ML) of ad-atoms occupying non-equivalent T4 sites. During the formation of the alloy, Si ad-atoms preferably occupy the majority type adsorption site. This peculiar substitution mechanism leads to a mutual arrangement of ad-atoms which is not random even at room temperature, but shows the typical short range order universally observed in 2D and quasi 2D binary alloys

cond-mat.mtrl-sci↗

arXiv2001

Electronic and structural properties of superconducting diborides and calcium disilicide in the $\rm AlB_2$ structure

We report a detailed study of the electronic and structural properties of the 39K superconductor \mgbtwo and of several related systems of the same family, namely \mgalbtwo, \bebtwo, \casitwo and \cabesi. Our calculations, which include zone-center phonon frequencies and transport properties, are performed within the local density approximation to the density functional theory, using the full-potential linearized augmented plane wave (FLAPW) and the norm-conserving pseudopotential methods. Our results indicate essentially three-dimensional properties for these compounds; however, strongly two-dimensional $σ$-bonding bands contribute significantly at the Fermi level. Similarities and differences between \mgbtwo and \bebtwo (whose superconducting properties have not been yet investigated) %it is not yet know if it is a superconductor) are analyzed in detail. Our calculations for \mgalbtwo show that metal substitution cannot be fully described in a rigid band model. \casitwo is studied as a function of pressure, and Be substitution in the Si planes leads to a stable compound similar in many aspects to diborides.

cond-mat.supr-con↗

arXiv2001

Energetics and bonding properties of the Ni/$β$-SiC (001) interface: an ab-initio study

We investigate the adsorption of a Ni monolayer on the $β$-SiC(001) surface by means of highly precise first-principles all-electron FLAPW calculations. Total energy calculations for the Si- and C-terminated surfaces reveal high Ni-SiC adsorption energies, with respect to other metals, confirmining the strong reactivity and the stability of the transition metal/SiC interface. These high binding energies, about 7.3-7.4 eV, are shown to be related to strong $p$-$d$ hybridization, common to both surface terminations and different adsorption sites and despite the large mismatch, can stabilize overlayer growth. A detailed analysis of the bonding mechanism, hybridization of the surface states, charge transfer and surface core level shifts reveals the strong covalent character of the bonding. After a proper accounting of the Madelung term, the core level shift is shown to follow the charge transfer trend.

cond-mat.mtrl-sci↗