arXiv subjects

G. Reiss

Publications and source records attributed to G. Reiss.

26 records · Page 2Linked to original sources

arXiv2008

Hyper-domains in exchange bias micro-stripe pattern

A combination of experimental techniques, e.g. vector-MOKE magnetometry, Kerr microscopy and polarized neutron reflectometry, was applied to study the field induced evolution of the magnetization distribution over a periodic pattern of alternating exchange bias stripes. The lateral structure is imprinted into a continuous ferromagnetic/antiferromagnetic exchange-bias bi-layer via laterally selective exposure to He-ion irradiation in an applied field. This creates an alternating frozen-in interfacial exchange bias field competing with the external field in the course of the re-magnetization. It was found that in a magnetic field applied at an angle with respect to the exchange bias axis parallel to the stripes the re-magnetization process proceeds via a variety of different stages. They include coherent rotation of magnetization towards the exchange bias axis, precipitation of small random (ripple) domains, formation of a stripe-like alternation of the magnetization, and development of a state in which the magnetization forms large hyper-domains comprising a number of stripes. Each of those magnetic states is quantitatively characterized via the comprehensive analysis of data on specular and off-specular polarized neutron reflectivity. The results are discussed within a phenomenological model containing a few parameters which can readily be controlled by designing systems with a desired configuration of magnetic moments of micro- and nano-elements.

cond-mat.mtrl-sci↗

arXiv2007

Strong temperature dependence of antiferromagnetic coupling in CoFeB/Ru/CoFeB

The temperature dependence of saturation and spin-flop fields for artificial ferrimagnets (AFi) based on antiparallel coupled CoFeB/Ru/CoFeB trilayers has been investigated in a temperature range between 80K and 600K. The results presented in this paper are relevant for magnetic devices using this system, e.g. magnetic-random access memory based on spin-flop switching. In good accordance to the theory, the saturation field Hsat behaves like Hsat ~ H_0 (T/T_0)/sinh(T/T_0) with a characteristic temperature of T_0 = 150K. Within this model, the Fermi velocity for the Ru layer is of the order of 10^5m/s, therefore, explaining the strong variation of the coupling strength with the temperature in Ru based AFi. Furthermore, a strong uniaxial anisotropy of K_u = 2x10^3 J/m^3 with a small angular distribution of the anisotropy axes is observed for the AFi trilayers based on amorphous CoFeB alloys.

cond-mat.mtrl-sci↗

arXiv2007

Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance

The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgO interface is important to interpret the strong annealing temperature dependence of tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunnel junctions, which increases with annealing temperature from 20% after annealing at 200C up to a maximum value of 112% after annealing at 350C. While the well defined nearest neighbor ordering indicating crystallinity of the MgO barrier does not change by the annealing, a small amount of interfacial Fe-O at the lower Co-Fe-B / MgO interface is found in the as grown samples, which is completely reduced after annealing at 275C. This is accompanied by a simultaneous increase of the Fe magnetic moment and the tunnel magnetoresistance. However, the TMR of the MgO based junctions increases further for higher annealing temperature which can not be caused by Fe-O reduction. The occurrence of an x-ray absorption near-edge structure above the Fe and Co L-edges after annealing at 350C indicates the recrystallization of the Co-Fe-B electrode. This is prerequisite for coherent tunneling and has been suggested to be responsible for the further increase of the TMR above 275C. Simultaneously, the B concentration in the Co-Fe-B decreases with increasing annealing temperature, at least some of the B diffuses towards or into the MgO barrier and forms a B2O3 oxide.

cond-mat.mtrl-sci↗

arXiv2006

Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions

We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The evaluated MgO energy barrier (0.50+/-0.08 eV), the barrier width (13.1+/-0.5 angstrom) as well as the resistance times area product (7+/-1 Mohmsum2) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. The noise power, though exhibiting large variation, was observed to be roughly anticorrelated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behaviour could be related to an interplay between the magnetic state and the local barrier defects structure of the epitaxial MTJs

cond-mat.other↗

arXiv2005

Switching of sub-micrometer sized, antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers

This work reports on the magnetic reversal of sub-micrometer sized elements consisting of an CoFeB/Ru/CoFeB artificial ferrimagnet (AFi). The elements were patterned into ellipses having a width of approximately 250 to 270nm and a varying aspect ratio between 1.3 and 8. The coercivity was found to decrease with an increasing imbalance of the magnetic moment of the two antiferromagnetically coupled layers and is therefore strongly affected by an increase of effective anisotropy due to the antiferromagnetic coupling of the two layers. With respect to a single layer of amorphous CoFeB, patterned in comparable elements, the AFi has an increased coercivity. Switching asteroids comparable to single layers were only observed for samples with a high net moment.

cond-mat.mtrl-sci↗

arXiv2005

Magnetic properties of antiferromagnetically coupled CoFeB/Ru/CoFeB

This work reports on the thermal stability of two amorphous CoFeB layers coupled antiferromagnetically via a thin Ru interlayer. The saturation field of the artificial ferrimagnet which is determined by the coupling, J, is almost independent on the annealing temperature up to more than 300 degree C. An annealing at more than 325 degree C significantly increases the coercivity, Hc, indicating the onset of crystallization.

cond-mat.mtrl-sci↗

arXiv2005

Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers

This work reports on the magnetic interlayer coupling between two amorphous CoFeB layers, separated by a thin Ru spacer. We observe an antiferromagnetic coupling which oscillates as a function of the Ru thickness x, with the second antiferromagnetic maximum found for x=1.0 to 1.1 nm. We have studied the switching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and found that the coercivity depends on the net magnetic moment, i.e. the thickness difference of the two CoFeB layers. The antiferromagnetic coupling is almost independent on the annealing temperatures up to 300 degree C while an annealing at 350 degree C reduces the coupling and increases the coercivity, indicating the onset of crystallization. Used as a soft electrode in a magnetic tunnel junction, a high tunneling magnetoresistance of about 50%, a well defined plateau and a rectangular switching behavior is achieved.

cond-mat.mtrl-sci↗

arXiv2004

Resonance magneto-resistance in double barrier structure with spin-valve

The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant tunnelling, due to the quantum well states of the electron confined between two barriers, sharply depends on the mutual orientation of the magnetizations of ferromagnetic layers F. The calculated optimistic value of TMR exceeds 2000% .

cond-mat↗