arXiv subjects

G. Salis

Publications and source records attributed to G. Salis.

32 records · Page 2Linked to original sources

arXiv2010

Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device

The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also increases to 0.030\,K$^{-1}$. From measurements of the diffusion constant and the spin lifetime in the GaAs channel, we conclude that sample annealing modifies the temperature dependence of the spin transfer efficiency at injection and detection contacts. Surprisingly, the spin transfer efficiency increases in samples that exhibit minority-spin injection.

cond-mat.mes-hall↗

arXiv2009

Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices

The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in-plane external magnetic field, and can suppress such dephasing when antialigned with the external field, leading to satellite peaks in a Hanle measurement. The features observed agree well with a Monte Carlo simulation of the spin diffusion equation including hyperfine interaction, and are used to study the nuclear spin dynamics and relate it to the spin polarization of injected electrons.

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arXiv2009

Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well

We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba spin splitting can be tuned by the gate biases, while we find a small Dresselhaus splitting that depends only weakly on the gating. We determine the absolute values and signs of the two components and show that for zero Rashba spin splitting the anisotropy of the spin-dephasing rate vanishes.

cond-mat.mes-hall↗

arXiv2009

Spin-orbit interaction and spin relaxation in a two-dimensional electron gas

Using time-resolved Faraday rotation, the drift-induced spin-orbit Field of a two-dimensional electron gas in an InGaAs quantum well is measured. Including measurements of the electron mobility, the Dresselhaus and Rashba coefficients are determined as a function of temperature between 10 and 80 K. By comparing the relative size of these terms with a measured in-plane anisotropy of the spin dephasing rate, the D'yakonv-Perel' contribution to spin dephasing is estimated. The measured dephasing rate is significantly larger than this, which can only partially be explained by an inhomogeneous g-factor.

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arXiv2007

Two-dimensional imaging of the spin-orbit effective magnetic field

We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the local orientation and magnitude of the electric field. This motion induces Rashba and Dresselhaus effective magnetic fields. The projection of the sum of these fields onto an external magnetic field is monitored locally by measuring the electron spin-precession frequency using time-resolved Faraday rotation. A comparison with simulations shows good agreement with the experimental data.

cond-mat.mes-hall↗

arXiv2007

Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates

The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In line with numerical simulations, the stray-field-induced precession frequency increases as the gap between the ferromagnetic gates is reduced. The inhomogeneous stray field leads to additional spin dephasing.

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arXiv2006

Gate tunability of stray-field-induced electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating

Time-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by applying a gate voltage of opposite polarity to neighboring bars. A tunability of the precession frequency of 0.5 GHz/V has been observed. Modulating the gate potential with a gigahertz frequency allows the electron spin precession to be controlled on a nanosecond timescale.

cond-mat.mes-hall↗

arXiv2006

Interferometric detection of spin-polarized transport in the depletion layer of a metal-GaAs Schottky barrier

It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically-excited spin-polarized electrons in the depletion layer of n-doped GaAs displays fast oscillations that originate from an interference between the light reflected from the semiconductor surface and from the front of the electron distribution moving into the semiconductor. Using this effect, the dynamics of the photogenerated charge carriers in the depletion layer of the biased Schottky barrier is measured.

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arXiv2006

Stray-field-induced modification of coherent spin dynamics

Electron spins in an InGaAs semiconductor quantum well are used as a magnetometer of magnetic stray-fields from patterned Fe stripes. Using time-resolved Faraday rotation, the coherent precession of quantum-well spins in the inhomogeneous field below the Fe stripes is measured for varying magnetic fields. Comparing with reference stripes made of Au, we find an enhancement of the spin precession frequency proportional to the Fe magnetization, in line with a decrease of the spin decay time, which is attributed to the inhomogeneous magnetic stray-field in the quantum well layer.

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arXiv2001

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

Time-resolved optical measurements of electron-spin dynamics in a (110) GaAs quantum well are used to study the consequences of a strongly anisotropic electron g-tensor, and the origin of previously discovered all-optical nuclear magnetic resonance. All components of the g-tensor are measured, and a strong anisotropy even along the in-plane directions is found. The amplitudes of the spin signal allow the study of the spatial directions of the injected spin and its precession axis. Surprisingly efficient dynamic nuclear polarization in a geometry where the electron spins are injected almost transverse to the applied magnetic field is attributed to an enhanced non-precessing electron spin component. The small absolute value of the electron g-factor combined with efficient nuclear spin polarization leads to large nuclear fields that dominate electron spin precession at low temperatures. These effects allow for sensitive detection of all-optical nuclear magnetic resonance induced by periodically excited quantum-well electrons. The mechanism of previously observed Delta m = 2 transitions is investigated and found to be attributable to electric quadrupole coupling, whereas Delta m = 1 transitions show signatures of both quadrupole and electron-spin induced magnetic dipole coupling.

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arXiv2000

Optical manipulation of nuclear spin by a two-dimensional electron gas

Conduction electrons are used to optically polarize, detect and manipulate nuclear spin in a (110) GaAs quantum well. Using optical Larmor magnetometry, we find that nuclear spin can be polarized along or against the applied magnetic field, depending on field polarity and tilting of the sample with respect to the optical pump beam. Periodic optical excitation of the quantum-confined electron spin reveals a complete spectrum of optically-induced and quadrupolar-split nuclear resonances, as well as evidence for delta m = 2 transitions.

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arXiv1999

Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space

A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or leaving the wire. This way, scattering centers can be counted one by one.

cond-mat.mes-hall↗

arXiv1999

Mode Spectroscopy and Level Coupling in Ballistic Electron Waveguides

A tunable quantum point contact with modes occupied in both transverse directions is studied by magnetotransport experiments. We use conductance quantization of the one-dimensional subbands as a tool to determine the mode spectrum. A magnetic field applied along the direction of the current flow couples the modes. This can be described by an extension of the Darwin-Fock model. Anticrossings are observed as a function of the magnetic field, but not for zero field or perpendicular field directions, indicating coupling of the subbands due to nonparabolicity in the electrical confinement.

cond-mat.mes-hall↗

arXiv1998

Variation of elastic scattering across a quantum well

The Drude scattering times of electrons in two subbands of a parabolic quantum well have been studied at constant electron sheet density and different positions of the electron distribution along the growth direction. The scattering times obtained by magnetotransport measurements decrease as the electrons are displaced towards the well edges, although the lowest-subband density increases. By comparing the measurements with calculations of the scattering times of a two-subband system, new information on the location of the relevant scatterers and the anisotropy of intersubband scattering is obtained. It is found that the scattering time of electrons in the lower subband depends sensitively on the position of the scatterers, which also explains the measured dependence of the scattering on the carrier density. The measurements indicate segregation of scatterers from the substrate side towards the quantum well during growth.

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